RFD3055SM N-Channel 60V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The RFD3055SM is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 12A continuous drain current in a surface mount TO-252AA (DPAK) package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts maintain the core electrical specifications while offering improved availability and active manufacturer support.

Key Parameters

Parameter	RFD3055SM Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	12	A
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	150 mOhm @ 12A, 10V	mOhm
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23	nC @ 20V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	300	pF @ 25V
Power Dissipation (Max)	53	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the RFD3055SM is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 12A minimum at 25°C
Drive Voltage: 10V gate drive capability
Package Type: Surface mount DPAK (TO-252-3) configuration
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Factors:

Rds On (Max): Values at or below 150 mOhm maintain thermal performance equivalence
Gate Charge (Qg): Lower values indicate improved switching efficiency
Input Capacitance (Ciss): Affects gate drive requirements
Vgs(th): Threshold voltage compatibility with existing gate drive circuits

Substitute parts are grouped into two categories:

Category A - Direct Equivalents (Active Status): Parts maintaining 12A continuous drain current at 60V with DPAK packaging and active product status.

Category B - Functional Alternatives (Reduced Current Rating): Parts with lower continuous drain current ratings (9A) but equivalent voltage ratings and package types, suitable for applications with reduced current requirements.

Parameter Comparison

Parameter	RFD3055SM	NTD3055-094T4G	NTD3055L104T4G	NVD3055-150T4G-VF01	STD12NF06T4	PHT6NQ10T,135
Manufacturer	onsemi	onsemi	onsemi	onsemi	STMicroelectronics	Nexperia USA Inc.
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	60	60	60	60	60	100
Id @ 25°C (A)	12	12	12	9	12	3
Drive Voltage (V)	10	10	5	10	10	10
Rds On (Max) (mOhm)	150 @ 12A, 10V	94 @ 6A, 10V	104 @ 6A, 5V	150 @ 4.5A, 10V	100 @ 6A, 10V	90 @ 3A, 10V
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 250µA	2 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 1mA
Gate Charge Qg (Max) (nC)	23 @ 20V	20 @ 10V	20 @ 5V	15 @ 10V	12 @ 10V	21 @ 10V
Vgs (Max) (V)	±20	±20	±15	±20	±20	±20
Ciss (Max) (pF)	300 @ 25V	450 @ 25V	440 @ 25V	280 @ 25V	315 @ 25V	633 @ 25V
Power Dissipation (Max) (W)	53 (Tc)	48 (Tj)	48 (Tj)	28.8 (Tj)	30 (Tc)	8.3 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-65 to 150
Package	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	TO-261-4, SOT-223
Product Status	Obsolete	Active	Active	Active	Active	Not For New Designs
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status, Full Electrical Equivalence):

NTD3055-094T4G and NTD3055L104T4G are the preferred substitutes for the RFD3055SM. Both parts are manufactured by onsemi with active product status, maintain the 60V/12A electrical specifications, and are packaged in TO-252-3 DPAK configuration. Both are ROHS3 compliant and REACH unaffected. NTD3055-094T4G features 94 mOhm Rds On at 10V drive, while NTD3055L104T4G operates at 5V drive with 104 mOhm Rds On. Selection between these two depends on gate drive voltage availability in the application circuit.

STD12NF06T4 is an alternative substitute from STMicroelectronics, rated for 60V/12A in DPAK packaging with active product status. This part features 100 mOhm Rds On and lower gate charge (12 nC) compared to the RFD3055SM, resulting in improved switching efficiency. ROHS3 compliance and REACH unaffected status are confirmed.

Secondary Substitute (Reduced Current Rating, Active Status):

NVD3055-150T4G-VF01 is an automotive-grade substitute with AEC-Q101 qualification, rated for 60V/9A in DPAK packaging. This part is suitable for applications where continuous drain current requirements do not exceed 9A. The automotive qualification and active product status make this suitable for automotive and industrial applications requiring enhanced reliability documentation.

Not Recommended for New Designs:

PHT6NQ10T,135 is classified as "Not For New Designs" by Nexperia. Although it maintains 60V voltage rating, the 3A current rating and SOT-223 package are not equivalent to the RFD3055SM specifications. This part is unsuitable for direct substitution.

Frequently Asked Questions (FAQ)

Q: Can NTD3055-094T4G directly replace RFD3055SM in existing designs?

A: Yes. NTD3055-094T4G maintains the 60V/12A electrical specifications, operates across the same temperature range (-55°C to 175°C), and uses identical TO-252-3 DPAK packaging. The lower Rds On value (94 mOhm vs. 150 mOhm) provides improved thermal performance. Gate drive voltage compatibility at 10V is maintained.

Q: What is the difference between NTD3055-094T4G and NTD3055L104T4G?

A: Both parts maintain 60V/12A ratings and DPAK packaging. The primary difference is gate drive voltage: NTD3055-094T4G operates at 10V drive with 94 mOhm Rds On, while NTD3055L104T4G operates at 5V drive with 104 mOhm Rds On. Selection depends on available gate drive voltage in the application circuit. NTD3055L104T4G also features lower threshold voltage (2V vs. 4V).

Q: Is STD12NF06T4 suitable for replacing RFD3055SM?

A: Yes. STD12NF06T4 maintains 60V/12A specifications, DPAK packaging, and -55°C to 175°C operating range. The 100 mOhm Rds On and 12 nC gate charge provide improved switching characteristics compared to RFD3055SM. STMicroelectronics active product status ensures long-term availability.

Q: Can NVD3055-150T4G-VF01 be used as a direct replacement?

A: NVD3055-150T4G-VF01 is suitable only for applications where continuous drain current does not exceed 9A. The 60V voltage rating and DPAK packaging are compatible, but the reduced current rating limits its use to lower-power applications. Automotive-grade qualification (AEC-Q101) makes this suitable for automotive applications.

Q: Why is PHT6NQ10T,135 not recommended?

A: PHT6NQ10T,135 has a 3A continuous drain current rating, significantly below the RFD3055SM 12A specification. Additionally, it uses SOT-223 packaging instead of DPAK, requiring PCB layout modifications. The "Not For New Designs" status from Nexperia further limits its suitability.

Q: Are all substitute parts ROHS3 compliant?

A: All active substitute parts (NTD3055-094T4G, NTD3055L104T4G, NVD3055-150T4G-VF01, and STD12NF06T4) are ROHS3 compliant. PHT6NQ10T,135 is also ROHS3 compliant but carries "Not For New Designs" status.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge (Qg) reduces the charge required to switch the MOSFET on and off, resulting in lower gate drive power consumption and faster switching transitions. STD12NF06T4 with 12 nC gate charge and NVD3055-150T4G-VF01 with 15 nC gate charge provide improved efficiency compared to RFD3055SM at 23 nC.

Q: Are package dimensions identical between DPAK substitutes?

A: All DPAK substitutes (NTD3055-094T4G, NTD3055L104T4G, NVD3055-150T4G-VF01, and STD12NF06T4) use TO-252-3 DPAK (SC-63) packaging with identical lead configurations. Direct PCB footprint compatibility is maintained.

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