RFD3055LESM9A Equivalent & Substitute Parts

Part Overview

The RFD3055LESM9A is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 11A continuous drain current at 25°C. This device is housed in a TO-252AA surface mount package and is designed for general-purpose switching applications requiring moderate current handling and voltage ratings. The part maintains Active product status with full RoHS3 compliance and unlimited moisture sensitivity level classification.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatibility with the TO-252-3 DPAK package family and surface mount assembly requirements.

Key Parameters

Parameter	RFD3055LESM9A	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ 8A, 5V	107	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 10V	11.3	nC
Power Dissipation (Max)	38	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252AA	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the RFD3055LESM9A is determined by the following criteria:

Voltage Rating Compatibility: Substitute parts must maintain a Vdss rating equal to or greater than 60V to ensure safe operation under maximum applied drain-to-source voltage conditions.

Current Handling Capability: Substitute parts must support continuous drain current (Id) at or above 11A at 25°C to meet or exceed the original part's current capacity.

On-State Resistance (Rds On): Substitute parts must demonstrate Rds On values that do not significantly degrade circuit performance. Lower Rds On values indicate improved efficiency and reduced power dissipation.

Package Compatibility: All substitute parts must utilize the TO-252-3 DPAK surface mount package family to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Thermal and Compliance Requirements: Substitute parts must maintain operating temperature ranges compatible with -55°C to 175°C specifications and retain RoHS3 compliance status.

The following parts meet these substitution criteria:

NTD3055-094T4G (onsemi): Equivalent voltage rating with higher current capacity (12A) and improved Rds On performance
STD16NF06LT4 (STMicroelectronics): Equivalent voltage rating with significantly higher current capacity (24A) and superior Rds On characteristics
IXTY01N100 (IXYS): Same package footprint but fundamentally different electrical specifications (1000V, 100mA) — not suitable for direct substitution

Parameter Comparison

Parameter	RFD3055LESM9A	NTD3055-094T4G	STD16NF06LT4	IXTY01N100	Unit
Manufacturer	onsemi	onsemi	STMicroelectronics	IXYS	—
Drain-to-Source Voltage (Vdss)	60	60	60	1000	V
Continuous Drain Current (Id) @ 25°C	11	12	24	0.1	A
Rds On (Max)	107 @ 8A, 5V	94 @ 6A, 10V	70 @ 8A, 10V	80000 @ 100mA, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	4	1	4.5	V
Gate Charge (Qg) @ 10V	11.3	20	7.5	6.9	nC
Power Dissipation (Max)	38	48	40	25	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 150	°C
Package Type	TO-252AA	DPAK	DPAK	TO-252AA	—
RoHS3 Compliance	Yes	Yes	Yes	Yes	—
Moisture Sensitivity Level	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

NTD3055-094T4G (onsemi): This part is a direct functional equivalent with improved specifications. It maintains the 60V Vdss rating and exceeds the 11A current requirement with 12A capability. The lower Rds On value (94mOhm versus 107mOhm) provides improved efficiency. Both parts share onsemi manufacturing heritage and identical compliance certifications. This substitute is suitable for applications where the original part is unavailable while maintaining or improving circuit performance.

STD16NF06LT4 (STMicroelectronics): This part provides the same 60V voltage rating with significantly enhanced current capacity (24A). The superior Rds On performance (70mOhm) results in lower power dissipation and improved thermal characteristics. The STripFET™ II series designation indicates advanced process technology. This substitute is appropriate for designs requiring higher current margins or improved efficiency, with full RoHS3 compliance and identical operating temperature range. The lower gate threshold voltage (1V) requires verification of gate drive circuit compatibility.

IXTY01N100 (IXYS): This part is not suitable as a direct substitute. Although it shares the TO-252AA package and surface mount mounting type, the 1000V Vdss rating and 100mA current capacity represent fundamentally different electrical specifications. This device is designed for high-voltage, low-current applications and does not meet the current handling requirements of the RFD3055LESM9A application.

Frequently Asked Questions (FAQ)

Q: Can the NTD3055-094T4G replace the RFD3055LESM9A in all applications?

A: The NTD3055-094T4G meets or exceeds all critical electrical parameters of the RFD3055LESM9A. Both parts share identical 60V Vdss ratings, compatible operating temperature ranges, and equivalent package families. The higher current rating (12A versus 11A) and improved Rds On performance make this a suitable substitute. Gate drive voltage requirements differ (10V versus 5V), requiring verification that the gate drive circuit can supply the higher voltage.

Q: What is the primary difference between the NTD3055-094T4G and STD16NF06LT4?

A: Both parts maintain 60V Vdss ratings and are housed in TO-252-3 DPAK packages. The STD16NF06LT4 provides significantly higher current capacity (24A versus 12A) and superior Rds On performance (70mOhm versus 94mOhm). The STD16NF06LT4 is manufactured by STMicroelectronics using STripFET™ II technology, while the NTD3055-094T4G is an onsemi product. Selection between these parts depends on whether the additional current capacity and efficiency improvements justify potential supply chain or qualification considerations.

Q: Why is the IXTY01N100 listed as a substitute if it cannot replace the RFD3055LESM9A?

A: The IXTY01N100 shares the TO-252AA surface mount package with the RFD3055LESM9A, which may create confusion during component selection. However, the 1000V voltage rating and 100mA current capacity make this device unsuitable for applications designed around 60V, 11A specifications. This part is included in the comparison to clarify that package similarity does not guarantee functional equivalence.

Q: Are there any thermal considerations when substituting these parts?

A: All substitute parts maintain the same -55°C to 175°C operating temperature range as the RFD3055LESM9A. The NTD3055-094T4G and STD16NF06LT4 both support higher power dissipation ratings (48W and 40W respectively versus 38W), indicating improved thermal performance. Actual thermal performance depends on PCB layout, copper area, and thermal management design. Lower Rds On values in substitute parts reduce resistive heating, potentially improving thermal margins.

Q: Do all substitute parts maintain RoHS3 compliance?

A: Yes. The NTD3055-094T4G, STD16NF06LT4, and IXTY01N100 all carry RoHS3 compliance certification identical to the RFD3055LESM9A. All parts maintain Moisture Sensitivity Level 1 (Unlimited) classification, indicating no special moisture handling requirements during storage or assembly.

Q: What gate drive voltage should be used with substitute parts?

A: The RFD3055LESM9A specifies 5V drive voltage for maximum Rds On specification. The NTD3055-094T4G requires 10V drive voltage, while the STD16NF06LT4 supports both 5V and 10V drive voltages. Gate drive circuit compatibility must be verified before substitution, particularly when transitioning from 5V to 10V gate drive requirements.

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