RFD3055LESM N-Channel 60V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The RFD3055LESM is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 11A continuous drain current in a surface mount TO-252AA (DPAK) package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. The part operates across a wide temperature range from -55°C to 175°C and dissipates up to 38W at the case temperature.

Substiute Parts

RFD3055LESM

onsemiIn Stock: 2156RFD3055LESM Datasheet

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NVD3055-150T4G-VF01

onsemiIn Stock: 15482NVD3055-150T4G-VF01 Datasheet

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IRLR024TRPBF

Vishay SiliconixIn Stock: 15465IRLR024TRPBF Datasheet

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STD16NF06LT4

STMicroelectronicsIn Stock: 17142STD16NF06LT4 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the RFD3055LESM is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-resistance (Rds On), package type (TO-252-3 DPAK), and operating temperature range. All substitute parts must maintain the 60V Vdss rating and surface mount DPAK package configuration. Drain current ratings may vary within acceptable design margins, as on-resistance and power dissipation characteristics scale accordingly. Gate charge, threshold voltage, and input capacitance variations are acceptable provided the parts operate within the specified temperature range and maintain electrical compatibility in the application circuit.

Parameter Comparison

Engineering Selection Recommendations

NVD3055-150T4G-VF01 is an active onsemi product with AEC-Q101 automotive qualification and ROHS3 compliance. This part maintains the same 60V Vdss rating and operating temperature range as the RFD3055LESM. The 9A continuous drain current is lower than the original 11A specification, resulting in higher on-resistance (150mOhm versus 107mOhm). This substitute is suitable for applications where the lower current rating and higher on-resistance are acceptable within thermal and power budget constraints.

IRLR024TRPBF is an active Vishay Siliconix product with ROHS3 compliance. This part exceeds the original specifications with 14A continuous drain current and lower on-resistance (100mOhm). The maximum operating temperature is limited to 150°C compared to the RFD3055LESM's 175°C rating. This substitute provides improved current handling and reduced conduction losses but requires verification that the 150°C upper temperature limit is compatible with the application environment.

STD16NF06LT4 is an active STMicroelectronics product from the STripFET™ II series with ROHS3 compliance. This part significantly exceeds the original specifications with 24A continuous drain current and the lowest on-resistance (70mOhm). The operating temperature range extends to 175°C, matching the original part. This substitute provides the highest performance margin and is suitable for applications requiring enhanced current capacity and reduced power dissipation.

Frequently Asked Questions (FAQ)

Q: Can the NVD3055-150T4G-VF01 be used as a direct replacement for the RFD3055LESM?

A: The NVD3055-150T4G-VF01 shares the same 60V Vdss rating, DPAK package, and operating temperature range. However, the continuous drain current is reduced from 11A to 9A, and on-resistance increases from 107mOhm to 150mOhm. Substitution is valid only if the application circuit operates within the lower current specification and can tolerate the increased conduction losses.

Q: What is the primary limitation of the IRLR024TRPBF as a substitute?

A: The IRLR024TRPBF has a maximum operating temperature of 150°C, which is 25°C lower than the RFD3055LESM's 175°C rating. Applications requiring operation at temperatures above 150°C cannot use this substitute. All other electrical parameters are compatible or superior to the original part.

Q: Why does the STD16NF06LT4 have significantly lower on-resistance?

A: The STD16NF06LT4 is rated for 24A continuous drain current compared to the RFD3055LESM's 11A. The lower on-resistance (70mOhm versus 107mOhm) is a direct result of the larger die size and improved semiconductor technology used to achieve the higher current rating. This results in lower conduction losses and reduced power dissipation in the same DPAK package.

Q: Are all substitute parts RoHS3 compliant?

A: Yes, all three substitute parts (NVD3055-150T4G-VF01, IRLR024TRPBF, and STD16NF06LT4) are ROHS3 compliant. The original RFD3055LESM does not specify RoHS status due to its obsolete classification.

Q: Can gate charge differences affect circuit performance?

A: Gate charge variations (ranging from 7.5nC to 18nC across the substitute parts) affect gate drive circuit design and switching speed. Higher gate charge requires more drive current or longer switching times. The application's gate driver circuit must be evaluated to ensure compatibility with the selected substitute part's gate charge specification.

Q: Is the DPAK package identical across all parts?

A: All parts use the TO-252-3 DPAK (2 Leads + Tab) surface mount package with identical mechanical dimensions and PCB footprint. Physical substitution on the circuit board is directly compatible without layout modifications.