RF1601T2D Equivalent & Substitute Parts

Part Overview

The RF1601T2D is a general-purpose diode array manufactured by Rohm Semiconductor, configured as a 1 Pair Common Cathode rectifier with 200 V reverse voltage rating and 8 A average rectified current per diode. The device is housed in a TO-220-3 Full Pack through-hole package and is classified as Active product status with ROHS3 compliance.

Substitute parts are necessary when the primary part becomes unavailable, when higher current ratings are required for circuit redesign, or when alternative manufacturer sourcing is preferred for supply chain optimization. All substitute parts listed maintain the same diode configuration, voltage rating, and package form factor while offering variations in current capacity and electrical characteristics.

Key Parameters

Parameter	Value	Unit
Diode Configuration	1 Pair Common Cathode	—
Voltage - DC Reverse (Vr) (Max)	200	V
Current - Average Rectified (Io) (per Diode)	8	A
Voltage - Forward (Vf) (Max) @ If	930 mV @ 8 A	—
Reverse Recovery Time (trr)	30	ns
Speed Classification	Fast Recovery ≤ 500ns, > 200mA (Io)	—
Current - Reverse Leakage @ Vr	10	µA @ 200 V
Operating Temperature - Junction (Max)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
Technology	Standard	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the RF1601T2D is determined by strict adherence to the following critical parameters:

Mandatory Matching Parameters:

Diode Configuration: 1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max): 200 V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Speed Classification: Fast Recovery ≤ 500ns, > 200mA (Io)

Variable Parameters Allowing Substitution:

Current - Average Rectified (Io) (per Diode): 5 A to 16 A range
Voltage - Forward (Vf) (Max) @ If: 860 mV to 1.27 V range
Reverse Recovery Time (trr): 20 ns to 45 ns range
Current - Reverse Leakage @ Vr: 1 µA to 100 µA range
Operating Temperature - Junction: -65°C to 175°C range
Technology: Standard or Super Barrier or Avalanche

Substitute parts are grouped into three categories based on current rating: lower current (5 A), equivalent current (8 A to 10 A), and higher current (16 A) variants. All substitute parts maintain the same reverse voltage specification and through-hole TO-220-3 package configuration, ensuring mechanical and electrical compatibility within the specified parameter ranges.

Parameter Comparison

Part Number	Manufacturer	Io (per Diode)	Vf (Max) @ If	trr (ns)	Ir @ 200V	Tj (Max)	Technology	Product Status
RF1601T2D	Rohm Semiconductor	8 A	930 mV @ 8 A	30	10 µA	150°C	Standard	Active
RF1601T2DNZC9	Rohm Semiconductor	16 A	930 mV @ 8 A	30	10 µA	150°C	Standard	Active
DPG20C200PN	IXYS	10 A	1.27 V @ 10 A	35	1 µA	175°C	Standard	Active
FFPF20UP20DNTU	onsemi	10 A	1.15 V @ 10 A	45	100 µA	150°C	Avalanche	Obsolete
SBR10200CTFP	Diodes Incorporated	5 A	900 mV @ 5 A	20	100 µA	150°C	Super Barrier	Active
SBR20A200CTFP	Diodes Incorporated	10 A	860 mV @ 10 A	30	100 µA	175°C	Super Barrier	Active
STTH1002CFP	STMicroelectronics	8 A	1.1 V @ 5 A	25	5 µA	175°C	Standard	Active
STTH1602CFP	STMicroelectronics	10 A	1.1 V @ 8 A	26	6 µA	175°C	Standard	Active
STTH2002CFP	STMicroelectronics	10 A	1.1 V @ 10 A	27	10 µA	175°C	Standard	Active

Engineering Selection Recommendations

For Direct Replacement (Equivalent Current Rating):

STTH1002CFP (STMicroelectronics) provides the closest electrical match to RF1601T2D with identical 8 A current rating. Both devices are Active status with ROHS3 compliance. STTH1002CFP offers improved reverse recovery time (25 ns versus 30 ns) and lower reverse leakage current (5 µA versus 10 µA), with higher maximum junction temperature (175°C versus 150°C).

For Higher Current Applications:

RF1601T2DNZC9 (Rohm Semiconductor) and STTH1602CFP (STMicroelectronics) both support 10 A current rating. RF1601T2DNZC9 maintains identical electrical characteristics to the main part with doubled current capacity. STTH1602CFP offers superior reverse recovery time (26 ns) and lower leakage current (6 µA).

STTH2002CFP (STMicroelectronics) also supports 10 A with reverse recovery time of 27 ns and reverse leakage current of 10 µA, matching the main part specification.

For Maximum Current Capacity:

RF1601T2DNZC9 supports 16 A average rectified current per diode, providing the highest current rating among all substitutes while maintaining identical voltage and package specifications.

For Lower Current Applications:

SBR10200CTFP (Diodes Incorporated) is rated for 5 A and employs Super Barrier technology with the fastest reverse recovery time (20 ns) and lowest forward voltage drop (900 mV @ 5 A). This part is suitable for applications requiring reduced current capacity with enhanced switching performance.

Compliance and Availability:

All Active status parts (RF1601T2DNZC9, DPG20C200PN, SBR10200CTFP, SBR20A200CTFP, STTH1002CFP, STTH1602CFP, STTH2002CFP) maintain ROHS3 compliance and REACH Unaffected status. FFPF20UP20DNTU is classified as Obsolete and should not be selected for new designs.

Frequently Asked Questions (FAQ)

Q: Can RF1601T2D be replaced with a lower current rated part?

A: SBR10200CTFP (5 A rating) maintains all mandatory parameters including 200 V reverse voltage, 1 Pair Common Cathode configuration, and TO-220-3 Full Pack package. Selection of lower current parts is valid only when circuit design permits reduced current capacity.

Q: What is the difference between Standard, Super Barrier, and Avalanche technology options?

A: Technology classification describes the diode's internal structure and performance characteristics. Standard technology (RF1601T2D, STTH series) provides baseline performance. Super Barrier technology (SBR series) offers lower forward voltage drop and faster recovery. Avalanche technology (FFPF20UP20DNTU) provides avalanche breakdown protection but is classified as Obsolete.

Q: Are all substitute parts pin-compatible with RF1601T2D?

A: All substitute parts listed maintain the same TO-220-3 Full Pack package configuration and 1 Pair Common Cathode diode configuration, ensuring identical pin assignment and mechanical compatibility. Isolated Tab variants (SBR series with ITO-220AB package) provide electrical isolation of the tab from the cathode, which may require circuit board layout modification.

Q: Which substitute offers the best thermal performance?

A: STTH1602CFP and SBR20A200CTFP both support maximum junction temperature of 175°C, compared to 150°C for RF1601T2D. These parts accommodate higher thermal stress in applications with elevated ambient temperatures or continuous high-current operation.

Q: Can FFPF20UP20DNTU be used as a substitute?

A: FFPF20UP20DNTU meets all mandatory electrical and mechanical parameters with 10 A current rating and 200 V reverse voltage. However, this part is classified as Obsolete product status and should not be selected for new designs or long-term production applications.

Q: What is the significance of reverse recovery time differences?

A: Reverse recovery time (trr) ranges from 20 ns (SBR10200CTFP) to 45 ns (FFPF20UP20DNTU) across substitute options. Faster recovery times reduce switching losses and electromagnetic interference in high-frequency rectification circuits. RF1601T2D specifies 30 ns, placing it in the mid-range of available options.

Q: How do forward voltage drop specifications affect circuit performance?

A: Forward voltage drop (Vf) ranges from 860 mV (SBR20A200CTFP @ 10 A) to 1.27 V (DPG20C200PN @ 10 A). Lower forward voltage reduces power dissipation and heat generation. RF1601T2D specifies 930 mV @ 8 A. Selection should consider total power budget and thermal management requirements.

Q: Are all parts available in the same packaging format?

A: All substitute parts use TO-220-3 Full Pack through-hole package. SBR series parts (SBR10200CTFP, SBR20A200CTFP) feature Isolated Tab variant (ITO-220AB), which provides electrical isolation of the mounting tab from the cathode terminal, requiring verification of circuit board design compatibility.

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