RF101A2ST-32 Equivalent & Substitute Parts

Part Overview

The RF101A2ST-32 is a general-purpose rectifier diode manufactured by Rohm Semiconductor, rated for 200 V DC reverse voltage and 1 A average rectified current. This component is classified as obsolete, which necessitates identification of active equivalent and substitute parts for ongoing design support and procurement continuity. The RF101A2ST-32 features fast recovery characteristics with a reverse recovery time of 25 ns, making it suitable for applications requiring rapid switching performance in through-hole axial configurations.

Substiute Parts

RF101A2ST-32
Rohm SemiconductorIn Stock: 1041RF101A2ST-32 Datasheet
RF101A2ST-32
Current Part
1N3611
Microchip TechnologyIn Stock: 15311N3611 Datasheet
1N3611
Similar
1N3611GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 200961N3611GP-E3/54 Datasheet
1N3611GP-E3/54
Similar
1N3611GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 7571N3611GP-E3/73 Datasheet
1N3611GP-E3/73
Similar
1N4003-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 189701N4003-E3/54 Datasheet
1N4003-E3/54
Similar
1N4003-T
Diodes IncorporatedIn Stock: 381021N4003-T Datasheet
1N4003-T
Similar
1N4003-TP
Micro Commercial CoIn Stock: 342541N4003-TP Datasheet
1N4003-TP
Similar
1N4003G
Taiwan Semiconductor CorporationIn Stock: 279541N4003G Datasheet
1N4003G
Similar
1N4003G-T
Diodes IncorporatedIn Stock: 29281N4003G-T Datasheet
1N4003G-T
Similar
1N4003GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 66831N4003GP-E3/73 Datasheet
1N4003GP-E3/73
Similar
1N4003RLG
onsemiIn Stock: 16041N4003RLG Datasheet
1N4003RLG
Similar
1N4935-T
Diodes IncorporatedIn Stock: 54791N4935-T Datasheet
1N4935-T
Similar
1N4935G
Taiwan Semiconductor CorporationIn Stock: 8961N4935G Datasheet
1N4935G
Similar
1N4935G-T
Diodes IncorporatedIn Stock: 11281N4935G-T Datasheet
1N4935G-T
Similar
1N4935RLG
onsemiIn Stock: 154941N4935RLG Datasheet
1N4935RLG
Similar
1N4942
Microchip TechnologyIn Stock: 15211N4942 Datasheet
1N4942
Similar
1N4942GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 11891N4942GP-E3/73 Datasheet
1N4942GP-E3/73
Similar
1N5614
Microchip TechnologyIn Stock: 12661N5614 Datasheet
1N5614
Similar
1N5615
Semtech CorporationIn Stock: 17051N5615 Datasheet
1N5615
Similar
1N5615GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 113041N5615GP-E3/54 Datasheet
1N5615GP-E3/54
Similar
BYW27-200GP-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 777BYW27-200GP-E3/54 Datasheet
BYW27-200GP-E3/54
Similar
BYW27-200GP-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1039BYW27-200GP-E3/73 Datasheet
BYW27-200GP-E3/73
Similar
GP08D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 959GP08D-E3/54 Datasheet
GP08D-E3/54
Similar
GP08D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1159GP08D-E3/73 Datasheet
GP08D-E3/73
Similar
GP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 911GP10D-E3/54 Datasheet
GP10D-E3/54
Similar
GP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 1087GP10D-E3/73 Datasheet
GP10D-E3/73
Similar
MPG06D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 3435MPG06D-E3/54 Datasheet
MPG06D-E3/54
Similar
MPG06D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 720MPG06D-E3/73 Datasheet
MPG06D-E3/73
Similar
RGP10D
Fairchild SemiconductorIn Stock: 17142RGP10D Datasheet
RGP10D
Similar
RGP10D-E3/54
Vishay General Semiconductor - Diodes DivisionIn Stock: 1434RGP10D-E3/54 Datasheet
RGP10D-E3/54
Similar
RGP10D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 8191RGP10D-E3/73 Datasheet
RGP10D-E3/73
Similar
RMPG06D-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 776RMPG06D-E3/73 Datasheet
RMPG06D-E3/73
Similar
UF1003-T
Diodes IncorporatedIn Stock: 1342UF1003-T Datasheet
UF1003-T
Similar
UF4003
Diotec SemiconductorIn Stock: 15291UF4003 Datasheet
UF4003
Similar
UF4003-E3/73
Vishay General Semiconductor - Diodes DivisionIn Stock: 2185UF4003-E3/73 Datasheet
UF4003-E3/73
Similar

Key Parameters

Parameter Value
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1 A
Voltage - Forward (Vf) (Max) @ If 870 mV @ 1 A
Reverse Recovery Time (trr) 25 ns
Current - Reverse Leakage @ Vr 10 µA @ 200 V
Speed Classification Fast Recovery ≤ 500 ns, > 200 mA (Io)
Mounting Type Through Hole
Package / Case DO-41 Mini, Axial
Operating Temperature - Junction (Max) 150°C
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the RF101A2ST-32 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1 A
  • Mounting Type: Through Hole
  • Package / Case: DO-41 or DO-204AL (Axial)

Secondary Compatibility Factors:

  • Forward voltage drop (Vf) at rated current
  • Reverse recovery time (trr) and speed classification
  • Reverse leakage current
  • Operating temperature range
  • RoHS and regulatory compliance status

Substitute parts are grouped into two categories based on recovery speed characteristics:

Category 1: Fast Recovery Substitutes – Parts with reverse recovery time ≤ 500 ns, matching the RF101A2ST-32 fast recovery specification. These provide direct functional equivalence for applications sensitive to switching speed.

Category 2: Standard Recovery Substitutes – Parts with reverse recovery time > 500 ns. These are electrically compatible at the rated voltage and current but exhibit slower switching characteristics. Selection depends on application timing requirements.

All substitute parts listed maintain the 200 V / 1 A electrical rating and through-hole axial mounting configuration required for direct replacement.

Parameter Comparison

Part Number Manufacturer Vr (Max) Io Vf (Max) @ If trr Speed Ir @ Vr Package Temp Range Product Status RoHS
RF101A2ST-32 Rohm Semiconductor 200 V 1 A 870 mV @ 1 A 25 ns Fast Recovery ≤ 500 ns 10 µA @ 200 V DO-41, Axial -/150°C Obsolete ROHS3
1N3611 Microchip Technology 200 V 1 A 1.1 V @ 1 A - Standard Recovery > 500 ns 1 µA @ 200 V A, Axial -65°C ~ 175°C Active Non-compliant
1N3611GP-E3/54 Vishay General Semiconductor 200 V 1 A 1 V @ 1 A 2 µs Standard Recovery > 500 ns 1 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active ROHS3
1N3611GP-E3/73 Vishay General Semiconductor 200 V 1 A 1 V @ 1 A 2 µs Standard Recovery > 500 ns 1 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active ROHS3
1N4003-E3/54 Vishay General Semiconductor 200 V 1 A 1.1 V @ 1 A - Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -55°C ~ 150°C Active ROHS3
1N4003-T Diodes Incorporated 200 V 1 A 1 V @ 1 A 2 µs Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 150°C Last Time Buy ROHS3
1N4003-TP Micro Commercial Co 200 V 1 A 1.1 V @ 1 A 2 µs Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -55°C ~ 150°C Not For New Designs ROHS3
1N4003G Taiwan Semiconductor Corporation 200 V 1 A 1 V @ 1 A - Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -55°C ~ 150°C Active ROHS3
1N4003G-T Diodes Incorporated 200 V 1 A 1 V @ 1 A 2 µs Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active ROHS3
1N4003GP-E3/73 Vishay General Semiconductor 200 V 1 A 1.1 V @ 1 A 2 µs Standard Recovery > 500 ns 5 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 175°C Active ROHS3
1N4003RLG onsemi 200 V 1 A 1.1 V @ 1 A - Standard Recovery > 500 ns 10 µA @ 200 V DO-204AL, DO-41, Axial -65°C ~ 175°C Not For New Designs ROHS3

Engineering Selection Recommendations

For Active Production Designs:

The 1N4003G-T (Diodes Incorporated) and 1N4003GP-E3/73 (Vishay General Semiconductor) are recommended as primary substitutes. Both parts are in Active product status, ROHS3 compliant, and provide the required 200 V / 1 A electrical specifications with through-hole axial packaging. The 1N4003G-T offers an extended operating temperature range (-65°C ~ 175°C) compared to the original RF101A2ST-32 (-/150°C), providing additional thermal margin for demanding applications.

For Designs Requiring Fast Recovery Characteristics:

The RF101A2ST-32 specifies fast recovery with a 25 ns reverse recovery time. No substitute parts in the provided list maintain this fast recovery specification. All listed alternatives employ standard recovery characteristics (trr > 500 ns). Applications dependent on fast switching performance require evaluation of alternative fast recovery diode families outside this substitute list.

For RoHS Compliance:

All recommended substitute parts carry ROHS3 compliance certification, matching the original RF101A2ST-32. The 1N3611 (Microchip Technology) is RoHS non-compliant and should not be selected for new designs subject to RoHS requirements.

For Last-Time-Buy and Obsolescence Scenarios:

The 1N4003-T (Diodes Incorporated) carries Last Time Buy status, indicating limited future availability. Parts marked "Not For New Designs" (1N4003-TP, 1N4003RLG) should be avoided in new product development.

Preferred Substitute Priority:

  1. 1N4003G-T (Diodes Incorporated) – Active status, extended temperature range, ROHS3 compliant
  2. 1N4003GP-E3/73 (Vishay General Semiconductor) – Active status, ROHS3 compliant, SUPERECTIFIER® series
  3. 1N3611GP-E3/54 or 1N3611GP-E3/73 (Vishay General Semiconductor) – Active status, ROHS3 compliant, lower reverse leakage

Frequently Asked Questions (FAQ)

Q: Can the RF101A2ST-32 be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible from an electrical and mechanical standpoint for all listed parts. All substitutes maintain the 200 V reverse voltage rating, 1 A average rectified current, and through-hole axial package configuration. However, the RF101A2ST-32 specifies fast recovery (25 ns), while all listed substitutes employ standard recovery characteristics (> 500 ns). Applications sensitive to reverse recovery time require verification that standard recovery performance is acceptable.

Q: What is the difference between fast recovery and standard recovery diodes?

A: Recovery speed refers to the reverse recovery time (trr), which is the time required for a diode to transition from forward conduction to reverse blocking when the applied voltage reverses. The RF101A2ST-32 exhibits fast recovery (25 ns), enabling rapid switching suitable for high-frequency applications. Standard recovery diodes (trr > 500 ns) switch more slowly and may introduce additional switching losses in circuits operating at elevated frequencies. Selection depends on the specific application's switching frequency and efficiency requirements.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed except the 1N3611 (Microchip Technology) carry ROHS3 compliance certification. The 1N3611 is RoHS non-compliant and should not be used in applications subject to RoHS regulatory requirements.

Q: What is the difference between 1N4003-T and 1N4003G-T?

A: Both parts are manufactured by Diodes Incorporated and share the same 200 V / 1 A electrical specifications. The 1N4003-T carries Last Time Buy status, indicating limited future availability and production discontinuation. The 1N4003G-T is in Active status with ongoing production support. For new designs, 1N4003G-T is the preferred selection.

Q: Can I use 1N3611GP-E3/54 or 1N3611GP-E3/73 as substitutes?

A: Yes, both parts are electrically and mechanically compatible. They are manufactured by Vishay General Semiconductor under the SUPERECTIFIER® series, carry ROHS3 compliance, and maintain Active product status. The primary difference between these two part numbers is the supplier device package designation (54 vs. 73), which reflects different manufacturing or distribution channels but does not affect electrical performance or physical form factor.

Q: What is the significance of the forward voltage drop (Vf) difference between the RF101A2ST-32 and substitute parts?

A: The RF101A2ST-32 specifies a forward voltage drop of 870 mV @ 1 A, while most substitute parts specify 1 V or 1.1 V @ 1 A. This 130–230 mV difference results in increased power dissipation in the substitute diode during forward conduction. For applications with tight thermal budgets or high current duty cycles, this difference should be evaluated. The higher forward voltage of substitutes may require thermal management adjustments or circuit redesign to maintain acceptable operating temperatures.

Q: Which substitute part offers the lowest reverse leakage current?

A: The 1N3611 and 1N3611GP-E3 variants specify 1 µA @ 200 V reverse leakage current, which is lower than the RF101A2ST-32 (10 µA @ 200 V) and most 1N4003 variants (5 µA @ 200 V). Lower reverse leakage is beneficial in high-impedance circuits or precision analog applications where leakage current can introduce measurement errors or circuit drift.

Q: What is the operating temperature range difference, and does it matter?

A: The RF101A2ST-32 specifies a maximum junction temperature of 150°C. Several substitute parts extend this to 175°C (1N3611GP-E3/54, 1N3611GP-E3/73, 1N4003-T, 1N4003G-T, 1N4003GP-E3/73, 1N4003RLG), providing additional thermal margin. Others maintain 150°C maximum (1N4003-E3/54, 1N4003-TP, 1N4003G). Extended temperature range is advantageous in applications operating in elevated ambient conditions or with high internal power dissipation.

Q: Is packaging compatibility guaranteed across all substitute parts?

A: All substitute parts employ through-hole axial mounting in DO-41 or DO-204AL packages, which are mechanically and electrically equivalent. However, physical lead diameter, spacing, and bend radius may vary slightly between manufacturers. Verification of PCB pad dimensions and lead-forming equipment compatibility is recommended before production implementation, particularly when transitioning between manufacturers.

Request Quote (Ships tomorrow)