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RF081M2STR Equivalent & Substitute Parts
Part Overview
The RF081M2STR is a general-purpose rectifier diode manufactured by Rohm Semiconductor, rated for 200 V DC reverse voltage and 800 mA average rectified current. This surface mount component operates with fast recovery characteristics and is classified as an active product with ROHS3 compliance. Equivalent and substitute parts are identified based on matching or exceeding the electrical specifications and mechanical compatibility requirements of the original component.
Substiute Parts
Key Parameters
| Parameter | RF081M2STR |
|---|---|
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 800 mA |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 800 mA |
| Speed | Fast Recovery ≤ 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123 |
| Operating Temperature - Junction (Max) | 150°C |
| RoHS Status | ROHS3 Compliant |
Substitute Part Grouping Explanation
Substitute parts for the RF081M2STR are classified based on electrical parameter compatibility and mechanical form factor. The primary substitution criteria are:
Critical Parameters for Substitution:
- Voltage - DC Reverse (Vr) (Max): Must equal or exceed 200 V
- Current - Average Rectified (Io): Must equal or exceed 800 mA
- Mounting Type: Surface Mount required
- Speed Classification: Fast Recovery preferred for equivalent performance
- RoHS Status: ROHS3 Compliant required
Direct Equivalent: RF081MM2STR matches all electrical specifications with identical voltage and current ratings, differing only in package variant (SOD-123F vs. SOD-123).
Functional Equivalents: Parts rated for 1 A current capacity (SFM14PL-TP, CMMR1S-02 TR PBFREE, DFLU1200-7, ES1002FL_R1_00001, SBR1U200P1-7, STTH1R02ZFY) exceed the 800 mA requirement while maintaining 200 V reverse voltage rating and fast recovery characteristics. These parts are electrically compatible for applications requiring the RF081M2STR.
Limited Compatibility: ACDSW21-G is rated for only 200 mA current capacity, which is below the 800 mA requirement of the RF081M2STR and is not suitable as a direct substitute.
Parameter Comparison
| Part Number | Manufacturer | Vr (Max) | Io | Vf (Max) @ If | trr (ns) | Package / Case | Operating Temp (Max) | RoHS Status |
|---|---|---|---|---|---|---|---|---|
| RF081M2STR | Rohm Semiconductor | 200 V | 800 mA | 950 mV @ 800 mA | 25 | SOD-123 | 150°C | ROHS3 |
| RF081MM2STR | Rohm Semiconductor | 200 V | 800 mA | 950 mV @ 800 mA | 25 | SOD-123F | 150°C | ROHS3 |
| SFM14PL-TP | Micro Commercial Co | 200 V | 1 A | 950 mV @ 1 A | 35 | SOD-123F | 150°C | ROHS3 |
| CMMR1S-02 TR PBFREE | Central Semiconductor Corp | 200 V | 1 A | 950 mV @ 1 A | 35 | SOD-123F | 150°C | ROHS3 |
| DFLU1200-7 | Diodes Incorporated | 200 V | 1 A | 980 mV @ 1 A | 25 | POWERDI®123 | 150°C | ROHS3 |
| ES1002FL_R1_00001 | Panjit International Inc. | 200 V | 1 A | 950 mV @ 1 A | 35 | SOD-123F | 150°C | ROHS3 |
| SBR1U200P1-7 | Diodes Incorporated | 200 V | 1 A | 820 mV @ 1 A | 25 | POWERDI®123 | 175°C | ROHS3 |
| STTH1R02ZFY | STMicroelectronics | 200 V | 1 A | 1 V @ 1 A | 32 | SOD-123F | 175°C | ROHS3 |
| ACDSW21-G | Comchip Technology | 200 V | 200 mA | 1.25 V @ 200 mA | 50 | SOD-123 | N/A | ROHS3 |
Engineering Selection Recommendations
Direct Replacement: RF081MM2STR is the primary equivalent part, offering identical electrical specifications and the same base product number. The difference in package variant (SOD-123F vs. SOD-123) requires verification of PCB footprint compatibility before selection.
Functional Substitutes with Higher Current Rating: SFM14PL-TP, CMMR1S-02 TR PBFREE, DFLU1200-7, ES1002FL_R1_00001, SBR1U200P1-7, and STTH1R02ZFY all provide 1 A current capacity, exceeding the 800 mA requirement. These parts maintain 200 V reverse voltage rating and ROHS3 compliance. Selection among these options depends on package form factor compatibility (SOD-123F vs. POWERDI®123) and thermal performance requirements.
Not Recommended: ACDSW21-G is rated for 200 mA current capacity, which is insufficient for applications requiring 800 mA operation and does not meet the electrical requirements of the RF081M2STR.
All recommended substitute parts maintain ROHS3 compliance and are classified as active products with current manufacturing status.
Frequently Asked Questions (FAQ)
Q: Can RF081MM2STR be used as a direct replacement for RF081M2STR?
A: RF081MM2STR is electrically equivalent with identical voltage and current ratings. The primary difference is the package variant (SOD-123F vs. SOD-123). PCB footprint compatibility must be verified before substitution.
Q: Are the 1 A rated parts suitable substitutes for the 800 mA RF081M2STR?
A: Yes. Parts rated for 1 A current capacity (SFM14PL-TP, CMMR1S-02 TR PBFREE, DFLU1200-7, ES1002FL_R1_00001, SBR1U200P1-7, STTH1R02ZFY) exceed the 800 mA requirement and maintain the 200 V reverse voltage specification. Package form factor compatibility must be confirmed.
Q: What is the difference between SOD-123 and SOD-123F packages?
A: Both are surface mount packages for rectifier diodes. SOD-123F is a variant of SOD-123 with different physical dimensions. PCB footprint design determines which package is compatible with a specific application.
Q: Why is ACDSW21-G not recommended as a substitute?
A: ACDSW21-G is rated for 200 mA average rectified current, which is below the 800 mA requirement of the RF081M2STR. This part does not meet the electrical specifications necessary for equivalent operation.
Q: What is the significance of reverse recovery time (trr) in diode selection?
A: Reverse recovery time affects switching speed and efficiency in rectification circuits. The RF081M2STR specifies 25 ns. Substitute parts with equal or slightly higher trr values (up to 35 ns) maintain fast recovery characteristics suitable for the same applications.
Q: Are all substitute parts ROHS3 compliant?
A: All recommended substitute parts listed in this document are ROHS3 compliant, matching the compliance status of the RF081M2STR.
Q: What is the difference between standard and super barrier diode technology?
A: SBR1U200P1-7 uses Super Barrier technology, which typically provides lower forward voltage drop (820 mV vs. 950 mV) compared to standard technology parts. This may reduce power dissipation in high-current applications.
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