RDD023N50TL Equivalent & Substitute Parts Reference

Part Overview

RDD023N50TL is an N-channel MOSFET from Rohm Semiconductor categorized under Transistors, FETs, MOSFETs. It features a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 2A (Tc), with a maximum power dissipation of 20W (Tc). The device is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. This product is currently active and compliant with ROHS3 and REACH regulations.

Identifying suitable substitutes for RDD023N50TL becomes necessary in various scenarios such as inventory shortages or supply chain interruptions. Substitute parts must be evaluated strictly based on matching key electrical and mechanical parameters as defined for this product category.

Key Parameters

Parameter	Description	Main Part Value
FET Type	N-Channel MOSFET construction	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	Maximum voltage between drain and source	500V
Current - Continuous Drain (Id) @ 25°C	Maximum continuous drain current at 25°C	2A (Tc)
Rds On (Max) @ Id, Vgs	Maximum on-resistance at specified Id and Vgs	5.4Ω @ 1A, 10V
Vgs(th) (Max) @ Id	Maximum gate threshold voltage	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	Maximum gate charge at Vgs	11nC @ 10V
Vgs (Max)	Maximum allowable gate-to-source voltage	±20V
Input Capacitance (Ciss) (Max) @ Vds	Maximum input capacitance at specified Vds	151pF @ 25V
Power Dissipation (Max)	Maximum continuous power dissipation	20W (Tc)
Operating Temperature	Maximum junction temperature	150°C (TJ)
Mounting Type	Surface Mount/Through Hole	Surface Mount
Package / Case	Package style	TO-252-3, DPAK (2 Leads + Tab), SC-63

Substitute Part Grouping Explanation

Substitute MOSFETs are selected based on strict matching of the following key parameters:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Maximum Rds On at similar conditions
Maximum Gate-Source Voltage (Vgs)
Input Capacitance (Ciss)
Package / Case compatibility
Compliance with regulatory certifications

Only parts that satisfy these essential electrical and mechanical specifications can be grouped as direct equivalents or substitutes in the Transistors, FETs, MOSFETs category.

Parameter Comparison

Parameter	RDD023N50TL	R6002END3TL1	IRFR420TRPBF	IXTY08N50D2
Manufacturer	Rohm Semiconductor	Rohm Semiconductor	Vishay Siliconix	IXYS
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V	600V	500V	500V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)	1.7A (Tc)	2.4A (Tc)	800mA (Tc)
Rds On (Max) @ Id, Vgs	5.4Ω @ 1A, 10V	3.4Ω @ 500mA, 10V	3Ω @ 1.4A, 10V	4.6Ω @ 400mA, 0V
Vgs(th) (Max) @ Id	2V @ 1mA	4V @ 1mA	4V @ 250µA	-
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V	6.5nC @ 10V	19nC @ 10V	12.7nC @ 5V
Vgs (Max)	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	151pF @ 25V	65pF @ 25V	360pF @ 25V	312pF @ 25V
Power Dissipation (Max)	20W (Tc)	26W (Tc)	42W (Tc)	60W (Tc)
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Affected	REACH Unaffected
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts (R6002END3TL1, IRFR420TRPBF, IXTY08N50D2) are active and compliant with ROHS3. RDD023N50TL, R6002END3TL1, and IXTY08N50D2 are REACH unaffected, while IRFR420TRPBF is REACH affected. Each substitute shares the same package type (TO-252-3, DPAK (2 Leads + Tab), SC-63) and surface-mount configuration. These factors support the consideration of these substitutes for direct replacement strictly based on product status and regulatory compliance.

Frequently Asked Questions (FAQ)

Q1: What makes a MOSFET suitable as a substitute for RDD023N50TL?
A1: To be considered a substitute, the MOSFET must have matching or comparable electrical parameters (FET type, Vdss, Id, Rds On, Vgs) and mechanical compatibility (package type, mounting method). Compliance with ROHS and REACH is also necessary.

Q2: Are package and mounting considerations important in MOSFET substitution?
A2: Yes, the substitute part must have the same or mechanically equivalent package and mounting type (TO-252-3, DPAK (2 Leads + Tab), SC-63, surface mount) for direct board placement.

Q3: How does product status affect substitution?
A3: Only active products are listed as substitutes to ensure reliable sourcing and long-term availability.

Q4: Why does compliance status matter for substitute parts?
A4: Regulatory compliance such as ROHS3 and REACH affects the legality and environmental acceptability of components in production environments. Only compliant substitutes are suitable for regulated markets.

Q5: Can all substitute MOSFETs be used without further verification?
A5: Substitution suitability is established strictly based on the parameters and compliance data provided, with no assumptions or unverified compatibility considered.

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