R6012FNX Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor R6012FNX is an N-Channel MOSFET with a maximum drain-source voltage of 600 V and a continuous drain current rating of 12A (Tc). It features a TO-220FM full-pack through-hole package and is ROHS3 compliant. With an active product status and availability of inventory, the R6012FNX is suitable for high-voltage, medium-current switching applications. However, identifying substitute and equivalent MOSFETs is essential for design flexibility, risk management, and supply chain continuity, especially when addressing lead time, second-source policies, or obsolescence.

Key Parameters

Parameter	Value
Manufacturer Part Number	R6012FNX
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	510mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Power Dissipation (Max)	50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
MSL	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitute and equivalent parts are selected based on strict matching of critical electrical and mechanical parameters including FET type (N-Channel), technology (MOSFET), maximum drain-source voltage (Vdss), continuous drain current (Id), maximum Rds(on) at the specified current and gate voltage, maximum Vgs(th), gate charge, allowable gate-source voltage (Vgs(max)), input capacitance (Ciss), maximum power dissipation, mounting type, and package. Only parameters provided are considered.

Parameter Comparison

Manufacturer Part Number	Manufacturer	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Mounting Type	Package / Case	RoHS Status	MSL	REACH Status
R6012FNX	Rohm Semiconductor	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	510mOhm @ 6A, 10V	10V	5V @ 1mA	35 nC @ 10 V	±30V	1300 pF @ 25 V	50W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
IPA80R450P7XKSA1	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	800 V	11A (Tc)	450mOhm @ 4.5A, 10V	10V	3.5V @ 220µA	24 nC @ 10 V	±20V	770 pF @ 500 V	29W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	Not Applicable	REACH Unaffected
STF11N60M2-EP	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	7.5A (Tc)	595mOhm @ 3.75A, 10V	10V	4.75V @ 250µA	12.4 nC @ 10 V	±25V	390 pF @ 100 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF12N65M5	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	650 V	8.5A (Tc)	430mOhm @ 4.3A, 10V	10V	5V @ 250µA	22 nC @ 10 V	±25V	900 pF @ 100 V	25W (Tc)	Through Hole	TO-220-5 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF13N60M2	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	380mOhm @ 5.5A, 10V	10V	4V @ 250µA	17 nC @ 10 V	±25V	580 pF @ 100 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
FCPF11N60F	onsemi	N-Channel	MOSFET (Metal Oxide)	600 V	11A (Tc)	380mOhm @ 5.5A, 10V	10V	5V @ 250µA	52 nC @ 10 V	±30V	1490 pF @ 25 V	36W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	Not Applicable	REACH Unaffected
FCPF7N60	onsemi	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	600mOhm @ 3.5A, 10V	10V	5V @ 250µA	30 nC @ 10 V	±30V	920 pF @ 25 V	31W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	Not Applicable	REACH Unaffected
SPA07N60C3XKSA1	Infineon Technologies	N-Channel	MOSFET (Metal Oxide)	650 V	7.3A (Tc)	600mOhm @ 4.6A, 10V	10V	3.9V @ 250µA	27 nC @ 10 V	±20V	790 pF @ 25 V	32W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF10N60M2	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	7.5A (Tc)	600mOhm @ 4A, 10V	10V	4V @ 250µA	13.5 nC @ 10 V	±25V	400 pF @ 100 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF10NM60N	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	550mOhm @ 4A, 10V	10V	4V @ 250µA	19 nC @ 10 V	±25V	540 pF @ 50 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF10NM60ND	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Tc)	550mOhm @ 4A, 10V	10V	4V @ 250µA	19 nC @ 10 V	±25V	540 pF @ 50 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF11N65M5	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	650 V	9A (Tc)	480mOhm @ 4.5A, 10V	10V	5V @ 250µA	17 nC @ 10 V	±25V	644 pF @ 100 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
STF11NM60ND	STMicroelectronics	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	450mOhm @ 5A, 10V	10V	5V @ 250µA	30 nC @ 10 V	±25V	850 pF @ 50 V	25W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected
TK12A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Ta)	550mOhm @ 6A, 10V	10V	4V @ 1mA	38 nC @ 10 V	±30V	1800 pF @ 25 V	45W (Tc)	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected

Engineering Selection Recommendations

Select substitute MOSFETs for R6012FNX based on product status being "Active", RoHS3 compliance, MSL rating of 1 (Unlimited) or Not Applicable, and REACH status being "REACH Unaffected", according to the parameters provided. Do not select parts flagged "Not For New Designs" unless necessary for legacy design continuity. Where multiple mechanical and electrical matches exist, select devices with the same or lower Rds(on) and similar or higher drain current capability, always confirming package and mounting compatibility as shown above.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting R6012FNX?

The substitute must match the FET type (N-Channel), technology (MOSFET), drain-source voltage (Vdss), continuous drain current (Id), Rds(on), drive voltage for Rds(on), Vgs (max), gate charge (Qg), input capacitance (Ciss), power dissipation, mounting type (Through Hole), and package (TO-220-3 Full Pack or equivalent).

Q2: Is package compatibility required for substituting R6012FNX?

Yes. Substitute parts should have a TO-220-3 Full Pack or equivalent through-hole package to ensure mechanical and thermal compatibility.

Q3: What compliance certifications must be considered?

RoHS3 compliance, MSL, and REACH status must match or exceed those of R6012FNX for environmental and manufacturing compatibility.

Q4: Is it acceptable to use a MOSFET with higher Vdss or lower Rds(on)?

Only the parameters provided in the input dictate substitute acceptability. Electrical values can meet or exceed those of R6012FNX in the same package type as outlined in the parameter comparison.

Q5: Are discontinued or "Not For New Designs" substitutes valid?

"Not For New Designs" devices are indicated for legacy design replacement only, based on the provided product status. Confirm ongoing availability as indicated in inventory data.

Q6: Do all substitutes have the same maximum operating temperature?

Maximum operating temperatures are specified per device; ensure compatibility during selection based solely on given data.

Q7: How should differences in input capacitance (Ciss) or gate charge (Qg) be handled?

Substitute selection is based strictly on the provided values; ensure that system-level changes due to these parameters are within design constraints according to the parameter comparison table.

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