R6010ANX N-Channel 600V 10A MOSFET Equivalent & Substitute Parts

Part Overview

The R6010ANX is an N-Channel 600V 10A MOSFET manufactured by Rohm Semiconductor in a Through Hole TO-220FM package. This device is rated for 50W power dissipation at case temperature and operates up to 150°C junction temperature. The part is marked as "Not For New Designs," indicating it has been superseded in Rohm's product portfolio. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives from active product lines.

Key Parameters

Parameter	R6010ANX Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	10	A (Ta)
Drive Voltage (Max Rds On)	10	V
Gate Voltage (Vgs Max)	±30	V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature (TJ)	150	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3 Full Pack	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the R6010ANX is determined by the following critical parameters:

Mandatory Matching Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 10A or greater
Mounting Type: Through Hole
Package: TO-220-3 Full Pack compatible
Gate Voltage (Vgs): ±25V or greater
RoHS3 Compliance

Acceptable Variation Ranges:

Power Dissipation: 25W or greater (R6010ANX rated 50W)
Operating Temperature: 150°C or greater
Rds(on) @ 10V: No upper limit specified for R6010ANX; substitute devices range from 380mOhm to 600mOhm

Substitute parts are grouped into two categories:

Category A – Direct Functional Equivalents (600V, 10A nominal): Parts meeting or exceeding the R6010ANX specifications with 600V Vdss and 10A Id rating. These include STF10NM60N, STF11N60DM2, and STF11NM60ND.

Category B – Functional Alternatives (600V, 7A–11A range): Parts with 600V Vdss but drain current ratings between 7A and 11A. These provide operational compatibility in applications where exact 10A matching is not critical. Includes FCPF11N60F, SIHF7N60E-E3, and STF10N60M2.

Category C – Higher Voltage Alternatives (800V+): Parts with elevated Vdss ratings (800V) suitable for applications requiring additional voltage margin. Includes STF10N80K5 and IPAN80R450P7XKSA1.

Category D – Lower Current Alternatives (600V, <10A): Parts with 600V Vdss but reduced current ratings. Includes IPA60R600P7XKSA1 (6A).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds(on) @ 10V (mOhm)	Power Dissipation (W)	Vgs Max (V)	Operating Temp (°C)	Package	Product Status
R6010ANX	Rohm Semiconductor	600	10 (Ta)	—	50 (Tc)	±30	150	TO-220FM	Not For New Designs
FCPF11N60F	onsemi	600	11 (Tc)	380 @ 5.5A	36 (Tc)	±30	-55 to 150	TO-220F-3	Not For New Designs
IPA60R600P7XKSA1	Infineon Technologies	600	6 (Tc)	600 @ 1.7A	21 (Tc)	±20	-55 to 150	PG-TO220-FP	Active
IPAN80R450P7XKSA1	Infineon Technologies	800	11 (Tc)	450 @ 4.5A	29 (Tc)	±20	-55 to 150	PG-TO220-3-FP	Active
SIHF7N60E-E3	Vishay Siliconix	600	7 (Tc)	600 @ 3.5A	31 (Tc)	±30	-55 to 150	TO-220	Active
STF10N60M2	STMicroelectronics	600	7.5 (Tc)	600 @ 4A	25 (Tc)	±25	-55 to 150	TO-220FP	Active
STF10N80K5	STMicroelectronics	800	9 (Tc)	600 @ 4.5A	30 (Tc)	±30	-55 to 150	TO-220FP	Active
STF10NM60N	STMicroelectronics	600	10 (Tc)	550 @ 4A	25 (Tc)	±25	-55 to 150	TO-220FP	Active
STF11N60DM2	STMicroelectronics	600	10 (Tc)	420 @ 5A	25 (Tc)	±25	-55 to 150	TO-220FP	Active
STF11N65M5	STMicroelectronics	650	9 (Tc)	480 @ 4.5A	25 (Tc)	±25	150	TO-220FP	Active
STF11NM60ND	STMicroelectronics	600	10 (Tc)	450 @ 5A	25 (Tc)	±25	-55 to 150	TO-220FP	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

STF10NM60N, STF11N60DM2, and STF11NM60ND are the primary candidates. All three are active products from STMicroelectronics with 600V Vdss and 10A continuous drain current ratings. STF10NM60N and STF11N60DM2 offer improved Rds(on) characteristics (550mOhm and 420mOhm respectively) compared to the R6010ANX specification. All three support the full ±25V gate voltage range and operate to 150°C. These parts are ROHS3 compliant and available in TO-220FP packaging, which is mechanically compatible with TO-220FM.

For Applications Requiring Extended Voltage Margin:

IPAN80R450P7XKSA1 (Infineon CoolMOS™ P7, 800V, 11A) is an active product suitable for designs requiring higher voltage headroom. This part maintains 10A+ current capability and is ROHS3 compliant. The 800V rating provides additional safety margin in high-voltage switching applications.

For Cost-Optimized Alternatives:

FCPF11N60F (onsemi SuperFET™, 600V, 11A) provides 11A current capability with lower Rds(on) (380mOhm @ 5.5A). However, this part is marked "Not For New Designs," limiting its suitability for new development.

For Current-Reduced Applications:

IPA60R600P7XKSA1 (Infineon CoolMOS™ P7, 600V, 6A) is an active product with lower current rating. This part is suitable only for applications where 6A continuous drain current is sufficient.

Compliance and Availability:

All recommended active substitutes are ROHS3 compliant and REACH unaffected. STMicroelectronics parts (STF10NM60N, STF11N60DM2, STF11NM60ND) demonstrate the highest inventory availability (1,584–18,622 units in stock) and active product status, making them the preferred choice for new designs and long-term sourcing.

Frequently Asked Questions (FAQ)

Q: Can STF10NM60N directly replace R6010ANX in existing designs?

A: Yes. STF10NM60N matches the R6010ANX in Vdss (600V), Id (10A), and operating temperature (150°C). Both are N-Channel MOSFETs in TO-220 package variants. The TO-220FP package used by STF10NM60N is mechanically and electrically compatible with the R6010ANX TO-220FM package. Pin configuration is identical. No circuit modifications are required.

Q: What is the difference between TO-220FM and TO-220FP packaging?

A: Both TO-220FM and TO-220FP are Through Hole TO-220-3 Full Pack variants with identical pin configurations and mechanical dimensions. The primary difference is internal lead frame design and thermal characteristics. Both are suitable for the same PCB footprints and mounting hardware. Electrical performance differences are negligible for most applications.

Q: Why does STF11N60DM2 have lower Rds(on) (420mOhm) than R6010ANX?

A: The R6010ANX datasheet does not specify Rds(on) values. STF11N60DM2 is a newer design using STMicroelectronics' MDmesh™ DM2 technology, which provides improved on-resistance characteristics compared to older MOSFET generations. Lower Rds(on) reduces conduction losses and heat generation, improving overall circuit efficiency.

Q: Can I use IPAN80R450P7XKSA1 (800V) in place of R6010ANX (600V)?

A: Yes, for applications where higher voltage rating is acceptable. The 800V Vdss rating provides additional voltage margin and is backward compatible with 600V designs. The 11A current rating exceeds the R6010ANX 10A specification. However, the 800V device may have different switching characteristics and gate charge requirements. Verify thermal performance and switching behavior in your specific application before production deployment.

Q: Is STF11N65M5 (650V) a suitable substitute?

A: STF11N65M5 is suitable for applications where 650V Vdss is acceptable. The 9A continuous drain current is slightly below the R6010ANX 10A rating. This part is active and ROHS3 compliant. Use this substitute only if your application can tolerate the reduced current rating and slightly elevated voltage rating.

Q: Why is FCPF11N60F marked "Not For New Designs"?

A: FCPF11N60F is a legacy product from onsemi's product portfolio. Manufacturers discontinue older designs when newer alternatives with improved performance or cost structure become available. For new designs, active products such as STF10NM60N, STF11N60DM2, or STF11NM60ND are recommended to ensure long-term availability and support.

Q: What is the impact of different Rds(on) values on circuit performance?

A: Rds(on) directly affects conduction losses (I²R losses) and heat dissipation. Lower Rds(on) reduces power loss and operating temperature. For example, STF11N60DM2 (420mOhm @ 5A) generates less heat than SIHF7N60E-E3 (600mOhm @ 3.5A) at equivalent current levels. In high-frequency switching applications, lower Rds(on) improves efficiency and may reduce heatsink requirements.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this document are ROHS3 compliant and REACH unaffected, matching the R6010ANX compliance status. This ensures compatibility with environmental regulations and procurement requirements.

Q: Can I use a lower-current part like IPA60R600P7XKSA1 (6A) as a substitute?

A: IPA60R600P7XKSA1 is suitable only if your application's maximum continuous drain current does not exceed 6A. This part is not a direct replacement for the R6010ANX 10A rating. Use this substitute only when circuit analysis confirms that 6A is sufficient for your design.

Q: What is the operating temperature range difference between R6010ANX and substitute parts?

A: R6010ANX is rated to 150°C junction temperature. Most active substitutes (STF10NM60N, STF11N60DM2, STF11NM60ND) support -55°C to 150°C operating range, providing extended low-temperature performance. STF11N65M5 is rated to 150°C (matching R6010ANX). For applications requiring extended temperature range, active substitutes with -55°C to 150°C ratings are preferred.

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