Equivalent & Substitute Parts Reference for R6006ANDTL

Part Overview

R6006ANDTL is an N-channel power MOSFET from Rohm Semiconductor, designed for surface mount applications in the Transistors, FETs, MOSFETs category. It features a Drain-to-Source voltage rating of 600V, a continuous drain current of 6A (Tc), and a maximum power dissipation of 40W (Tc). The part is ROHS3 compliant and offered in a CPT3/TO-252-3, DPAK package. Product status is designated as Last Time Buy, indicating end-of-life and the need to identify parametric substitutes or equivalent alternatives for maintainability and continued availability in designs.

Key Parameters

Parameter	R6006ANDTL
Manufacturer	Rohm Semiconductor
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 25 V
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	CPT3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitute and equivalent models for R6006ANDTL are grouped strictly according to electrical parameters and mechanical compatibility. The following criteria are used:

FET Type (N-Channel)
Technology (MOSFET, Metal Oxide type)
Drain-to-Source Voltage rating (Vdss ≥ 600V)
Continuous Drain Current (Id at 25°C, within similar range)
Maximum Rds On values at specified Id and Vgs
Gate Threshold Voltage (Vgs(th) Max)
Gate Charge (Qg Max) @ Vgs
Maximum Gate-Source Voltage (Vgs Max)
Input Capacitance (Ciss Max)
Power Dissipation (Max, Tc)
Operating Junction Temperature (TJ)
Mounting Type (Surface Mount)
Package compatibility (TO-252-3, DPAK family)
Compliance certifications (RoHS, REACH, ECCN)

Only parts matching these parameters within stated ranges are listed as functional substitutes or equivalents.

Parameter Comparison

Part Number	Manufacturer	Category	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	MSL	REACH Status	ECCN
R6006ANDTL	Rohm Semiconductor	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	6A (Tc)	10V	1.2Ohm @ 3A, 10V	4.5V @ 1mA	15 nC @ 10 V	±30V	460 pF @ 25 V	40W (Tc)	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
R6007END3TL1	Rohm Semiconductor	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	620mOhm @ 2.4A, 10V	4V @ 1mA	20 nC @ 10 V	±20V	390 pF @ 25 V	78W (Tc)	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
IPD60R950C6ATMA1	Infineon Technologies	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	4.4A (Tc)	10V	950mOhm @ 1.5A, 10V	3.5V @ 130µA	13 nC @ 10 V	±20V	280 pF @ 100 V	37W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD7NM60N	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Tc)	10V	900mOhm @ 2.5A, 10V	4V @ 250µA	14 nC @ 10 V	±25V	363 pF @ 50 V	45W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD9N80K5	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	900mOhm @ 3.5A, 10V	5V @ 100µA	12 nC @ 10 V	±30V	340 pF @ 100 V	110W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
TK5P60W,RVQ	Toshiba Semiconductor and Storage	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	5.4A (Ta)	10V	900mOhm @ 2.7A, 10V	3.7V @ 270µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	60W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)		EAR99
IPD60R600P6ATMA1	Infineon Technologies	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	600mOhm @ 2.4A, 10V	4.5V @ 200µA	12 nC @ 10 V	±20V	557 pF @ 100 V	63W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD9NM60N	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	6.5A (Tc)	10V	745mOhm @ 3.25A, 10V	4V @ 250µA	17.4 nC @ 10 V	±25V	452 pF @ 50 V	70W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
FCD4N60TM	onsemi	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	3.9A (Tc)	10V	1.2Ohm @ 2A, 10V	5V @ 250µA	16.6 nC @ 10 V	±30V	540 pF @ 25 V	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD5N62K3	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	620 V	4.2A (Tc)	10V	1.6Ohm @ 2.1A, 10V	4.5V @ 50µA	26 nC @ 10 V	±30V	680 pF @ 50 V	70W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD6N60M2	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	4.5A (Tc)	10V	1.2Ohm @ 2.25A, 10V	4V @ 250µA	8 nC @ 10 V	±25V	232 pF @ 100 V	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD6N62K3	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	620 V	5.5A (Tc)	10V	1.28Ohm @ 2.8A, 10V	4.5V @ 50µA	25.7 nC @ 10 V	±30V	706 pF @ 50 V	90W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD7N60M2	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Tc)	10V	950mOhm @ 2.5A, 10V	4V @ 250µA	8.8 nC @ 10 V	±25V	271 pF @ 100 V	60W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99
STD7NM80	STMicroelectronics	Transistors, FETs, MOSFETs	N-Channel	MOSFET (Metal Oxide)	800 V	6.5A (Tc)	10V	1.05Ohm @ 3.25A, 10V	5V @ 250µA	18 nC @ 10 V	±30V	620 pF @ 25 V	90W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63	ROHS3 Compliant	1 (Unlimited)	REACH Unaffected	EAR99

Engineering Selection Recommendations

Selection of substitutes for R6006ANDTL is determined by matching parametric criteria and compliance certifications. All substitute parts listed are ROHS3 compliant, with Moisture Sensitivity Level (MSL) 1 (Unlimited), and REACH Unaffected status where specified. ECCN code for all parts is EAR99. The mechanical packaging across alternatives conforms to the TO-252-3 (DPAK) compatibility as specified.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters must match for substitution?
A1: Substitute MOSFETs must closely match the Drain-to-Source voltage (Vdss), continuous drain current (Id), maximum Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), and maximum allowable Vgs.

Q2: Is package compatibility necessary for substitution?
A2: Yes, compatible surface mount packages such as TO-252-3, DPAK (2 Leads + Tab), SC-63 are required.

Q3: Are substitutes compliant with RoHS and REACH?
A3: All substitutes listed are ROHS3 compliant, and REACH status is unaffected where specified.

Q4: What is the impact of Moisture Sensitivity Level (MSL)?
A4: All substitute parts have an MSL rating of 1 (Unlimited), supporting standard reflow and handling.

Q5: Can substitute parts have higher or lower voltage/current ratings?
A5: Only substitute parts matching or exceeding the critical ratings provided (Vdss ≥ 600V, Id in comparable range) are listed based on input specifications.

Q6: Is the use of the same base part number required?
A6: Base part numbers are considered. All listed equivalents possess comparable electrical and mechanical parameters.

Q7: Does product status affect selection?
A7: Active parts are prioritized when Last Time Buy or Not For New Designs status is encountered for the main part, ensuring future availability. Only documented statuses as per input are used.

Q8: What if supplier device packages differ?
A8: Substitution is allowed only if the package / case matches the original TO-252-3, DPAK type as provided.

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