R5207ANDTL Equivalent & Substitute Parts Reference

Part Overview

The R5207ANDTL from Rohm Semiconductor is an N-channel MOSFET designed for high-voltage, moderate-current switching applications, featuring a drain-to-source voltage rating of 525 V and a continuous drain current of 7A in a CPT3 (DPAK TO-252-3) surface mount package. The product is actively supplied and RoHS3 compliant, with a maximum power dissipation of 40W (Tc). In design and maintenance scenarios, it may be necessary to identify substitutes for the R5207ANDTL due to supply chain constraints, lifecycle management, or inventory optimization. Alternate selections must strictly meet the key electrical and mechanical parameters to ensure reliable performance.

Key Parameters

Parameter	R5207ANDTL
Manufacturer	Rohm Semiconductor
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	525 V
Continuous Drain Current (Id) @ 25°C	7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 25 V
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	CPT3
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
MSL	1 (Unlimited)

Substitute Part Grouping Explanation

Substitution for the R5207ANDTL is determined strictly based on matching key parameters: FET type (N-channel MOSFET), maximum drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on) at specified current and gate voltage, maximum gate-source voltage (Vgs), gate charge (Qg), input capacitance (Ciss), power dissipation, device package, mounting type, and RoHS compliance. Only parts with matching or closely similar ratings and the same package specifications are considered suitable substitutes within this category.

Parameter Comparison

Part Number	Manufacturer	Vdss	Id @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Qg (Max) @ Vgs	Vgs (Max)	Ciss (Max) @ Vds	Power Dissipation (Max)	Operating Temp (TJ)	Mounting Type	Supplier Device Package	Package / Case	RoHS Status	MSL
R5207ANDTL	Rohm Semiconductor	525V	7A (Ta)	1Ω @ 3.5A, 10V	4.5V @ 1mA	13 nC @ 10V	±30V	500 pF @ 25V	40W (Tc)	150°C	Surface Mount	CPT3	TO-252-3, DPAK	ROHS3	1
R6007END3TL1	Rohm Semiconductor	600V	7A (Tc)	620mΩ @ 2.4A, 10V	4V @ 1mA	20 nC @ 10V	±20V	390 pF @ 25V	78W (Tc)	150°C	Surface Mount	TO-252	TO-252-3, DPAK	ROHS3	1
TK6P53D(T6RSS-Q)	Toshiba	525V	6A (Ta)	1.3Ω @ 3A, 10V	4.4V @ 1mA	12 nC @ 10V	±30V	600 pF @ 25V	100W (Tc)	150°C	Surface Mount	DPAK	TO-252-3, DPAK	ROHS3	1
TK7P50D(T6RSS-Q)	Toshiba	500V	7A (Ta)	1.22Ω @ 3.5A, 10V	4.4V @ 1mA	12 nC @ 10V	±30V	600 pF @ 25V	100W (Tc)	150°C	Surface Mount	DPAK	TO-252-3, DPAK	ROHS3	1
FDD6N50FTM	onsemi	500V	5.5A (Tc)	1.15Ω @ 2.75A, 10V	5V @ 250µA	19.8 nC @ 10V	±30V	960 pF @ 25V	89W (Tc)	-55~150°C	Surface Mount	TO-252AA	TO-252-3, DPAK	ROHS3	1
IRFR825TRPBF	Infineon Technologies	500V	6A (Tc)	1.3Ω @ 3.7A, 10V	5V @ 250µA	34 nC @ 10V	±20V	1346 pF @ 25V	119W (Tc)	-55~150°C	Surface Mount	TO-252AA	TO-252-3, DPAK	ROHS3	1
RJK5033DPD-00#J2	Renesas Electronics	500V	6A (Ta)	1.3Ω @ 3A, 10V	-	-	±30V	600 pF @ 25V	65W (Tc)	150°C	Surface Mount	MP-3A	TO-252-3, DPAK	ROHS3	1
STD6N52K3	STMicroelectronics	525V	5A (Tc)	1.2Ω @ 2.5A, 10V	4.5V @ 100µA	-	±30V	-	70W (Tc)	150°C	Surface Mount	DPAK	TO-252-3, DPAK	ROHS3	1

Engineering Selection Recommendations

All substitute MOSFETs listed are ROHS3 compliant and rated MSL 1 (unlimited), ensuring suitability for lead-free manufacturing and standard surface mount processes. Product status indications provided for each part should be considered to avoid last-time-buy or obsolete selections, as in the case of the FDD6N50FTM (onsemi, obsolete) and IRFR825TRPBF (Infineon Technologies, not for new designs). For ongoing designs, prioritize active parts only.

Frequently Asked Questions (FAQ)

Q1: What parameters must match to substitute R5207ANDTL in a design?
A1: Substitution requires matching key parameters including FET type (N-channel MOSFET), drain-to-source voltage (Vdss), continuous drain current (Id), Rds(on) at specified current and gate voltage, gate-source voltage (Vgs) maximum, input/output capacitance (Ciss), gate charge (Qg), package/case, mounting type, RoHS compliance, and supplier device package.

Q2: Are all shown substitutes pin-compatible with R5207ANDTL?
A2: All shown substitutes use the TO-252-3, DPAK (2 Leads + Tab), SC-63 package or direct equivalents, which match the mechanical and pinout specifications for surface-mount MOSFETs in this standard.

Q3: How are compliance and certifications verified among substitutes?
A3: All listed substitute parts are ROHS3 compliant and have an MSL of 1 (Unlimited), which aligns with standard electronics assembly and environmental requirements as presented in the supplied data.

Q4: Is package / device package consistency assured in substitute selection?
A4: Yes, substitute parts were selected only if they matched the package type TO-252-3, DPAK (2 Leads + Tab), SC-63 or compatible equivalents suitable for direct footprint replacement.

Q5: What is the importance of checking product status among substitutes?
A5: Product status such as “Active,” “Obsolete,” or “Not For New Designs” directly affects long-term availability. Only active parts should be used for new product designs to ensure ongoing supply chain continuity.

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