R5011FNX N-Channel 500V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The R5011FNX is an N-Channel MOSFET manufactured by Rohm Semiconductor, rated for 500V drain-to-source voltage with 11A continuous drain current (Ta) and 5.4A (Tc) in a TO-220FM through-hole package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Due to its obsolete status, equivalent and substitute parts are necessary for ongoing maintenance, repair, and legacy system support. Substitute devices must maintain electrical compatibility within the specified parameter ranges while accommodating available packaging options.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	500	V	Maximum rating
Continuous Drain Current (Id)	11 (Ta) / 5.4 (Tc)	A	@ 25°C
On-State Drain Resistance (Rds On)	520	mOhm	@ 5.5A, 10V Vgs
Gate-Source Threshold Voltage (Vgs(th))	4	V	@ 1mA Id
Gate Charge (Qg)	30	nC	@ 10V Vgs
Input Capacitance (Ciss)	950	pF	@ 25V Vds
Power Dissipation (Max)	50	W	@ Tc
Operating Temperature (TJ)	150	°C	Maximum
Package Type	TO-220-3	—	Through-hole
Gate-Source Voltage (Vgs Max)	±30	V	Maximum rating

Substitute Part Grouping Explanation

Substitution of the R5011FNX is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must support minimum 5.4A (Tc) or equivalent thermal rating
On-State Resistance (Rds On): Must not exceed 520mOhm at comparable test conditions
Gate-Source Threshold Voltage (Vgs(th)): Must fall within 3.5V to 5V range
Package Type: TO-220-3 full pack (through-hole mounting)
Gate-Source Voltage Rating (Vgs Max): Must support ±30V or greater

Substitution Categories:

Direct Manufacturer Equivalent: Parts meeting all primary criteria with minimal parameter deviation.

Similar/Compatible Substitutes: Parts meeting Vdss ≥ 500V, Id ≥ 5.4A (Tc), Rds On ≤ 520mOhm, and TO-220-3 package, with allowable variations in secondary parameters (gate charge, input capacitance, power dissipation) that do not affect circuit functionality.

Compliance Considerations: All substitute parts must maintain ROHS3 compliance and MSL 1 rating for equivalent handling and storage requirements.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
R5011FNX	Rohm	500	11 (Ta) / 5.4 (Tc)	520 @ 5.5A	4 @ 1mA	30 @ 10V	950 @ 25V	50	TO-220FM	Not For New Designs
TK12A53D(STA4,Q,M)	Toshiba	525	12 (Ta)	580 @ 6A	4 @ 1mA	25 @ 10V	1350 @ 25V	45	TO-220SIS	Active
FDPF12N50NZ	Fairchild	500	11.5 (Tc)	520 @ 5.75A	5 @ 250µA	30 @ 10V	1235 @ 25V	42	TO-220F-3	Active
FDPF16N50UT	Fairchild	500	15 (Tc)	480 @ 7.5A	5 @ 250µA	45 @ 10V	1945 @ 25V	38.5	TO-220F-3	Active
FQPF13N50CF	onsemi	500	13 (Tc)	540 @ 6.5A	4 @ 250µA	56 @ 10V	2055 @ 25V	48	TO-220F-3	Active
IRFIB7N50APBF	Vishay Siliconix	500	6.6 (Tc)	520 @ 4A	4 @ 250µA	52 @ 10V	1423 @ 25V	60	TO-220-3	Active
STF13NK50Z	STMicroelectronics	500	11 (Tc)	480 @ 6.5A	4.5 @ 100µA	47 @ 10V	1600 @ 25V	30	TO-220FP	Active
STF11NM50N	STMicroelectronics	500	8.5 (Tc)	470 @ 4.5A	4 @ 250µA	19 @ 10V	547 @ 50V	25	TO-220FP	Active
RJK4007DPP-M0#T2	Renesas	400	7.6 (Ta)	550 @ 7A	—	24.5 @ 10V	850 @ 25V	32	TO-220FL	Active
IPA50R520CPXKSA1	Infineon	500	7.1 (Tc)	520 @ 3.8A	3.5 @ 250µA	17 @ 10V	680 @ 100V	66	TO-220-3	Obsolete

Engineering Selection Recommendations

Tier 1 - Direct Substitutes (Recommended for Drop-In Replacement):

TK12A53D(STA4,Q,M) and FDPF12N50NZ are the primary substitutes for R5011FNX. Both devices maintain 500V+ Vdss rating, support ≥11A continuous drain current, and exhibit Rds On values within 520mOhm specification. Both are Active status products with ROHS3 compliance. TK12A53D offers slightly higher current rating (12A Ta) and lower gate charge (25nC), while FDPF12N50NZ provides equivalent Rds On (520mOhm) and gate charge (30nC) matching the original specification.

Tier 2 - Compatible Substitutes (Acceptable with Circuit Verification):

FQPF13N50CF (onsemi), FDPF16N50UT (Fairchild), and STF13NK50Z (STMicroelectronics) meet all primary electrical criteria with 500V Vdss and drain current ratings exceeding 11A. These parts are Active status with ROHS3 compliance. FQPF13N50CF and FDPF16N50UT exhibit slightly elevated Rds On (540mOhm and 480mOhm respectively) and higher gate charge values, requiring verification that switching characteristics remain acceptable. STF13NK50Z provides superior Rds On performance (480mOhm) with lower power dissipation (30W vs. 50W).

Tier 3 - Limited Substitutes (Application-Dependent):

IRFIB7N50APBF (Vishay Siliconix) and STF11NM50N (STMicroelectronics) meet voltage and package requirements but exhibit reduced continuous drain current ratings (6.6A and 8.5A Tc respectively). These parts are suitable only for applications where thermal management permits operation at lower current levels. Both are Active status with ROHS3 compliance.

Not Recommended:

RJK4007DPP-M0#T2 (Renesas) operates at 400V Vdss, below the 500V requirement of R5011FNX. This part is unsuitable for direct substitution in circuits requiring 500V rating.

IPA50R520CPXKSA1 (Infineon) is classified as Obsolete, presenting supply chain risk equivalent to the original R5011FNX. This part should not be selected as a long-term replacement.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower Vdss rating than 500V?

A: No. The R5011FNX is rated for 500V Vdss. Using a part with lower voltage rating (such as RJK4007DPP-M0#T2 at 400V) creates risk of device failure and circuit damage if transient voltages exceed the substitute's rating. Vdss must equal or exceed 500V.

Q: What is the minimum continuous drain current requirement for a substitute?

A: The substitute must support at least 5.4A continuous drain current at Tc (case temperature). This is the thermal-limited rating of the original R5011FNX. Parts rated for 6.6A or higher (such as IRFIB7N50APBF) are acceptable, though thermal design must be verified for applications requiring sustained current near the original 11A (Ta) rating.

Q: Are TO-220FM and TO-220FP packages interchangeable?

A: TO-220FM, TO-220FP, TO-220FL, and TO-220SIS are all TO-220-3 full pack variants with identical pin configurations and through-hole mounting. These packages are mechanically and electrically interchangeable on standard PCB layouts. Verify that the specific package variant is available from your supplier before committing to a design change.

Q: Why do some substitutes have higher gate charge (Qg) than the original?

A: Gate charge affects switching speed and driver circuit requirements. Higher Qg values (such as FQPF13N50CF at 56nC vs. R5011FNX at 30nC) require longer switching times and may increase switching losses. If your gate driver is current-limited, verify that it can supply sufficient charge within acceptable switching time windows. Lower Qg values (such as STF11NM50N at 19nC) improve switching performance but do not affect DC circuit operation.

Q: What does "Not For New Designs" status mean for the R5011FNX?

A: This designation indicates the part has reached end-of-life and is no longer recommended for new product development. Existing inventory may be available, but long-term supply is not guaranteed. For ongoing production or repair, selection of an Active status substitute (such as TK12A53D or FDPF12N50NZ) is necessary to ensure supply chain continuity.

Q: Are all listed substitutes ROHS3 compliant?

A: All recommended Tier 1 and Tier 2 substitutes are ROHS3 compliant with MSL 1 rating, matching the original R5011FNX compliance profile. IPA50R520CPXKSA1 is ROHS3 compliant but classified as Obsolete, presenting supply risk. Verify compliance documentation with your supplier before procurement.

Q: Can I use IRFIB7N50APBF if my application only requires 6.6A continuous current?

A: Yes, if your circuit design operates within the 6.6A (Tc) continuous drain current limit of IRFIB7N50APBF. However, verify that thermal management and duty cycle do not require the higher current capability of the original R5011FNX (11A Ta / 5.4A Tc). This part is suitable only for applications with reduced current requirements.

Q: What is the significance of Rds On matching between the original and substitute?

A: On-state resistance (Rds On) directly affects power dissipation and heat generation. The R5011FNX specifies 520mOhm at 5.5A, 10V Vgs. Substitutes with similar Rds On values (such as FDPF12N50NZ at 520mOhm or IRFIB7N50APBF at 520mOhm) produce equivalent power dissipation. Parts with lower Rds On (such as STF13NK50Z at 480mOhm) reduce heat generation and improve efficiency. Parts with higher Rds On (such as FQPF13N50CF at 540mOhm) increase heat generation and require verification that thermal design remains adequate.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message