Equivalent & Substitute Parts for Rohm Semiconductor R5009FNX

Part Overview

The R5009FNX by Rohm Semiconductor is a TO-220FM package N-Channel MOSFET, designed for high-voltage switching applications. Key features include a drain-to-source voltage of 500 V and a continuous drain current of 9 A, making it suitable for power management and control in electronic circuits. The product is classified as Active. Identifying alternative models is necessary for cases where supply, design flexibility, lifecycle status, or multi-sourcing requirements dictate the need to select compatible substitute parts.

Key Parameters

Parameter	R5009FNX Value	Notes
FET Type	N-Channel	Category-defining characteristic
Technology	MOSFET (Metal Oxide)	Required for matching
Drain to Source Voltage (Vdss)	500 V	Voltage rating
Current - Continuous Drain (Id) @ 25°C	9A (Tc)	Current capacity
Drive Voltage (Max Rds On, Min Rds On)	10V	Gate drive voltage
Rds On (Max) @ Id, Vgs	840mOhm @ 4.5A, 10V	Resistance between drain and source
Vgs(th) (Max) @ Id	4V @ 1mA	Threshold voltage
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V	Gate switching charge
Vgs (Max)	±30V	Max gate voltage
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 25 V	Input capacitance
Power Dissipation (Max)	50W (Tc)	Maximum power dissipation
Operating Temperature	150°C (TJ)	Junction temperature rating
Mounting Type	Through Hole	Mechanical compatibility
Package / Case	TO-220-3 Full Pack	Package type
RoHS Status	ROHS3 Compliant	Environmental compliance
REACH Status	REACH Unaffected	Substance compliance

Substitute Part Grouping Explanation

Substitution logic for R5009FNX is based strictly on matching the following key electrical and mechanical parameters:

FET Type (N-Channel)
Technology (MOSFET)
Drain to Source Voltage (Vdss)
Continuous Drain Current (Id)
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max)
Vgs (Max)
Input Capacitance (Ciss) (Max)
Power Dissipation (Max)
Operating Temperature
Mounting Type
Package / Case
RoHS and REACH Compliance

Substitute parts presented in this listing fulfill these criteria based on the supplied attributes.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss	Id @ 25°C	Rds On (Max)	Vgs(th) (Max)	Qg (Max)	Vgs (Max)	Ciss (Max)	Power Dissipation (Max)	Operating Temp (TJ)	Mounting Type	Package / Case	RoHS Status	REACH Status	Product Status
R5009FNX	Rohm Semiconductor	500 V	9A (Tc)	840mOhm @ 4.5A, 10V	4V @ 1mA	18 nC @ 10 V	±30V	630 pF @ 25 V	50W (Tc)	150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	REACH Unaffected	Active
AOT9N50	Alpha & Omega Semiconductor Inc.	500 V	9A (Tc)	850mOhm @ 4.5A, 10V	4.5V @ 250µA	28 nC @ 10 V	±30V	1042 pF @ 25 V	192W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3	ROHS3 Compliant	REACH Unaffected	Not For New Designs
STF12N50M2	STMicroelectronics	500 V	10A (Tc)	380mOhm @ 5A, 10V	4V @ 250µA	15 nC @ 10 V	±25V	560 pF @ 100 V	85W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	REACH Unaffected	Active
FDPF12N50T	onsemi	500 V	11.5A (Tc)	650mOhm @ 6A, 10V	5V @ 250µA	30 nC @ 10 V	±30V	1315 pF @ 25 V	42W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	REACH Unaffected	Obsolete
FDPF8N50NZ	onsemi	500 V	8A (Tc)	850mOhm @ 4A, 10V	5V @ 250µA	18 nC @ 10 V	±25V	735 pF @ 25 V	40.3W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	REACH Unaffected	Obsolete
IRFI840GLCPBF	Vishay Siliconix	500 V	4.5A (Tc)	850mOhm @ 2.7A, 10V	4V @ 250µA	39 nC @ 10 V	±30V	1100 pF @ 25 V	40W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack, Isolated Tab	ROHS3 Compliant	REACH Unaffected	Active
STF8NM50N	STMicroelectronics	500 V	5A (Tc)	790mOhm @ 2.5A, 10V	4V @ 250µA	14 nC @ 10 V	±25V	364 pF @ 50 V	20W (Tc)	-55°C ~ 150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	REACH Unaffected	Active
TK8A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	500 V	8A (Ta)	850mOhm @ 4A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	40W (Tc)	150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	-	Active
TK8A50DA(STA4,Q,M)	Toshiba Semiconductor and Storage	500 V	7.5A (Ta)	1.04Ohm @ 3.8A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	35W (Tc)	150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	-	Active
TK9A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	550 V	8.5A (Ta)	860mOhm @ 4.3A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	40W (Tc)	150°C	Through Hole	TO-220-3 Full Pack	ROHS3 Compliant	-	Active

Engineering Selection Recommendations

Select substitute parts that match the RoHS3 and REACH compliance status of the R5009FNX to maintain environmental conformity. Consider substitutes with an Active product status for design assurance and continued availability. Parts marked as Obsolete or Not For New Designs are suitable only for maintenance or legacy applications. All listed alternatives conform to required mounting, package, and electrical characteristics per provided data.

Frequently Asked Questions (FAQ)

Q: What defines a suitable substitute for R5009FNX in the MOSFET category?
A: Suitable substitutes must strictly match key parameters including FET type, drain-source voltage, continuous drain current, drive voltage, maximum Rds On, gate threshold voltage, gate charge, input capacitance, mounting type, and package/case. RoHS and REACH compliance are also mandatory.

Q: Are all listed substitutes pin- and footprint-compatible with R5009FNX?
A: All substitutes use a through-hole TO-220 or TO-220 full pack variant according to the provided package information. Direct mechanical compatibility is based only on the explicit package/case descriptions in the supplied data.

Q: What is the impact of product status (Active, Obsolete, Not For New Designs) on selection?
A: Active substitutes are suitable for new designs and ongoing production. Obsolete or Not For New Designs parts should be considered only for support of legacy systems or replenishment of existing equipment.

Q: Is environmental compliance consistent across all alternatives?
A: All substitutes are listed as ROHS3 Compliant and REACH Unaffected per supplied information, matching the compliance status of the R5009FNX.

Q: Are substitute parts with higher or lower current or voltage ratings compatible?
A: Compatibility in this context is determined only by the documented electrical parameter proximity and package equivalence in the provided specifications. No additional suitability criteria are evaluated beyond the input parameters.

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