Equivalent & Substitute Parts for R5007FNX MOSFET

Part Overview

The Rohm Semiconductor R5007FNX is an N-Channel MOSFET in the Transistors, FETs, MOSFETs category, supplied in TO-220FM full pack package for through-hole mounting. It features a drain-to-source voltage of 500 V, continuous drain current of 7A, and a maximum power dissipation of 40W (Tc). This part is RoHS3 compliant, REACH unaffected, and is actively stocked, supporting compliance requirements. Alternate models may be required to address supply chain constraints, design updates, or to ensure form, fit, and function compatibility when inventory changes or extended operating parameters are needed.

Key Parameters

Parameter	R5007FNX	Units
Manufacturer	Rohm Semiconductor	-
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-
Drain to Source Voltage (Vdss)	500	V
Current - Continuous Drain (Id) @ 25°C	7	A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.3 @ 3.5A, 10V	Ohm
Vgs(th) (Max) @ Id	4 @ 1mA	V
Gate Charge (Qg) (Max) @ Vgs	15 @ 10V	nC
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	450 @ 25V	pF
Power Dissipation (Max)	40	W (Tc)
Operating Temperature	150 (TJ)	°C
Mounting Type	Through Hole	-
Supplier Device Package	TO-220FM	-
RoHS Status	ROHS3 Compliant	-
REACH Status	REACH Unaffected	-

Substitute Part Grouping Explanation

Substitute MOSFETs for the R5007FNX are categorized by matching the core electrical and mechanical parameters: FET type (N-Channel), technology (MOSFET), package (TO-220FM through-hole), drain-to-source voltage, continuous drain current, Rds(on), gate charge, input capacitance, power dissipation, maximum Vgs, and compliance standards. Substitution is determined strictly by equivalence in these provided parameters and packaging type to ensure compatibility.

Parameter Comparison

Parameter	R5007FNX	R6007JNXC7G
Manufacturer	Rohm Semiconductor	Rohm Semiconductor
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	600 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)	7A (Tc)
Rds On (Max) @ Id, Vgs	1.3 Ohm @ 3.5A, 10V	780 mOhm @ 3.5A, 15V
Vgs(th) (Max) @ Id	4V @ 1mA	7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10V	17.5 nC @ 15V
Vgs (Max)	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25V	475 pF @ 100V
Power Dissipation (Max)	40W (Tc)	46W (Tc)
Operating Temperature	150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	TO-220FM	TO-220FM
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Both R5007FNX and R6007JNXC7G are active products, RoHS3 compliant, and REACH unaffected. Selection among these alternatives can be made based on identical product status and regulatory certifications as provided. All compared parts are suitable for direct substitution within the context of inventory, compliance, and packaging requirements specified.

Frequently Asked Questions (FAQ)

Q: What determines a valid substitute for R5007FNX in MOSFET applications?
A: Valid substitutes are chosen based on FET type, technology, voltage rating, current capability, Rds(on), package type (TO-220FM), and compliance statuses as provided.

Q: Are the packages for R5007FNX and its substitute R6007JNXC7G physically identical?
A: Both use the TO-220FM through-hole mounting, ensuring package and footprint compatibility.

Q: Does the substitute part R6007JNXC7G meet the same RoHS and REACH requirements as R5007FNX?
A: Yes. Both R5007FNX and R6007JNXC7G are listed as ROHS3 compliant and REACH unaffected.

Q: Is the substitute R6007JNXC7G actively available?
A: R6007JNXC7G is noted as an active product and in stock according to the parameters provided.

Q: Can R6007JNXC7G be selected based upon provided technical certifications and compliance data?
A: Yes. The available data confirms matching product activity and compliance with regulatory requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message