Equivalent & Substitute Parts for R4008ANDTL

Part Overview

The R4008ANDTL by Rohm Semiconductor is an N-channel MOSFET rated for 400 V and 8A (Ta), with a maximum power dissipation of 20W (Tc), designed for surface-mount applications in the CPT3 package. The product holds an active status and features compliance with ROHS3 and REACH standards. Sourcing equivalent or substitute parts is essential in cases of supply limitations or design compatibility where identical or closely matching electrical and mechanical parameters must be met.

Substiute Parts

R4008ANDTL
Rohm SemiconductorIn Stock: 5179R4008ANDTL Datasheet
R4008ANDTL
Current Part
R6007END3TL1
Rohm SemiconductorIn Stock: 3329R6007END3TL1 Datasheet
R6007END3TL1
Similar
STD7NK40ZT4
STMicroelectronicsIn Stock: 35107STD7NK40ZT4 Datasheet
STD7NK40ZT4
Similar

Key Parameters

Parameter Main Part Allowed for Substitution
Manufacturer Part Number R4008ANDTL Similar Part Number
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V to 600 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 5.4A (Tc) to 7A (Tc)
Drive Voltage 10V 10V
Rds On (Max) 950mOhm @ 4A, 10V 620mOhm @ 2.4A, 10V; 1Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4V @ 1mA; 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V; 26 nC @ 10 V
Vgs (Max) ±30V ±20V; ±30V
Input Capacitance (Ciss) (Max) 500 pF @ 25 V 390 pF @ 25 V; 535 pF @ 25 V
Power Dissipation (Max) 20W (Tc) 78W (Tc); 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ); -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected
Product Status Active Active

Substitute Part Grouping Explanation

Substitution is determined strictly by these key parameters:

  • FET Type: N-Channel MOSFET
  • Device Technology: MOSFET (Metal Oxide)
  • Drain-Source Voltage (Vdss)
  • Continuous Drain Current (Id) @ 25°C
  • Gate Threshold Voltage (Vgs(th))
  • Gate Charge (Qg)
  • Maximum Gate-Source Voltage (Vgs(max))
  • Maximum Power Dissipation
  • Mounting Type and Device Package
  • Compliance (RoHS, REACH)
  • Product Status: Only currently active products may be selected as substitutes

All listed substitute parts conform to the allowed range for these parameters and maintain full compliance and active status.

Parameter Comparison

Parameter Main Part
(R4008ANDTL)
Substitute
R6007END3TL1
Substitute
STD7NK40ZT4
Manufacturer Rohm Semiconductor Rohm Semiconductor STMicroelectronics
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 600 V 400 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) 7A (Tc) 5.4A (Tc)
Drive Voltage 10V 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 4A, 10V 620mOhm @ 2.4A, 10V 1Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 4V @ 1mA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 20 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V 390 pF @ 25 V 535 pF @ 25 V
Power Dissipation (Max) 20W (Tc) 78W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252-3, DPAK (2 Leads + Tab), SC-63
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Product Status Active Active Active

Engineering Selection Recommendations

All listed substitute MOSFETs share ROHS3 and REACH compliance status, active product status, and matching surface mount device package configurations. MOISTURE Sensitivity Level (MSL) and package/case type remain consistent, supporting direct substitution for applications requiring the same compliance and device status criteria.

Frequently Asked Questions (FAQ)

Q: What parameters define compatibility for substitute MOSFETs in this category?
A: Compatibility is determined strictly by N-channel type, MOSFET technology, drain-source voltage (Vdss), continuous drain current (Id), gate-source parameters, power dissipation, mounting/package style, compliance, and current product status.

Q: Do the substitute parts use the same physical package as R4008ANDTL?
A: All substitutes listed use the TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, identical to the main part.

Q: Are the substitutes compliant with industry standards?
A: All listed substitutes are ROHS3 compliant and REACH unaffected.

Q: What is the importance of product status when selecting a substitute?
A: Only substitutes with an active product status are eligible for direct replacement to ensure continued availability and manufacturer support.

Q: Is the maximum operating temperature compatible across substitutes?
A: The substitutes either match or exceed the maximum operating temperature specification of the main part. All parts accommodate up to 150°C (TJ).

Q: Are the electrical ratings of the substitutes within the required range?
A: Electrical ratings including Vdss, Id, drive voltage, and other key parameters strictly follow the substitution criteria outlined above.

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