QH8MA3TCR Equivalent & Substitute Parts Reference

Part Overview

The Rohm Semiconductor QH8MA3TCR is a surface-mount MOSFET array, featuring both N and P-Channel devices with a maximum drain-source voltage of 30V and continuous drain currents of 7A and 5.5A, respectively. Offered in the TSMT8 package, this part provides robust power handling at 1.5W and is designed for active production use with ROHS3 compliance. Identifying alternative models is necessary due to procurement needs, inventory management, and design flexibility. Substitute components must strictly match the electrical characteristics, mechanical package, compliance status, and mounting type to ensure interchangeability.

Substiute Parts

QH8MA3TCR

Rohm SemiconductorIn Stock: 51449QH8MA3TCR Datasheet

Current PartRFQ

PJL9602_R2_00001

Panjit International Inc.In Stock: 3133PJL9602_R2_00001 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute MOSFET arrays are grouped based on strict matching of the following allowed parameters: transistor technology (MOSFET), configuration (N and P-Channel), drain-source voltage (Vdss), continuous drain current (Id), Rds On at specified Id and Vgs, gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), maximum power dissipation (Power - Max), operating temperature range, mounting type (Surface Mount), package format, RoHS and REACH compliance status, moisture sensitivity level (MSL), ECCN, and HTSUS classification. Only parts satisfying each of these criteria are considered equivalent substitutes.

Parameter Comparison

Engineering Selection Recommendations

Select substitute parts with "Active" product status and ROHS3 compliance to maintain supply chain reliability and meet environmental requirements. Confirm Moisture Sensitivity Level (MSL) of 1 (Unlimited) for assembly compatibility. Verify REACH unaffected status and ECCN/HTSUS alignment for international regulatory compliance.

Frequently Asked Questions (FAQ)

Q1: Which electrical parameters must match for MOSFET array substitution?
A1: Configuration, drain-source voltage (Vdss), continuous drain current (Id), Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), input capacitance (Ciss), power dissipation, and operating temperature must be matched.

Q2: Are packaging and mounting type important for substituting MOSFET arrays?
A2: Yes. Substitute devices must have the same mounting type (Surface Mount) and use a compatible package format to ensure physical fit and board-level compatibility.

Q3: What role does ROHS3 and REACH compliance play in substitution?
A3: Compliance ensures environmental standards and legal regulations are met for manufacturing, export, and product safety. Substitute devices must be ROHS3 compliant and REACH unaffected.

Q4: Is MSL level relevant during part selection?
A4: Moisture Sensitivity Level (MSL) defines assembly and storage requirements; an MSL of 1 (Unlimited) supports standard assembly conditions without special precautions.

Q5: Should ECCN and HTSUS codes be considered?
A5: Yes, matched ECCN and HTSUS codes assure customs and export classification remain consistent during substitution.

Q6: Can substitute MOSFET arrays be used without design change?
A6: Substitution is permissible when all allowed parameters (electrical, mechanical, regulatory) are strictly matched. Compatibility is confirmed only on these criteria.