PUMX2,115 Equivalent & Substitute Parts

Part Overview

The PUMX2,115 is a dual NPN bipolar junction transistor (BJT) array manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component is classified as an active product with automotive-grade qualification (AEC-Q100) and is RoHS3 compliant. The device integrates two NPN transistors on a single substrate, designed for general-purpose switching and amplification applications in automotive and industrial electronics.

Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained within the specified parameter ranges. Alternative sources ensure supply chain flexibility and design continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN (Dual)	—
Current - Collector (Ic) (Max)	150	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	100	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	—
Power - Max	300	mW
Frequency - Transition	100	MHz
Operating Temperature (TJ)	150	°C
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—
Grade	Automotive	—
Qualification	AEC-Q100	—

Substitute Part Grouping Explanation

Substitution eligibility for the PUMX2,115 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Transistor configuration must be 2 NPN (Dual)
Maximum collector current (Ic) must be greater than or equal to 150mA
Maximum collector-emitter breakdown voltage (VCEO) must be greater than or equal to 50V
Saturation voltage (Vce) must not exceed specified limits
Collector cutoff current (ICBO) must not exceed 100nA
DC current gain (hFE) must meet minimum specifications
Maximum power dissipation must support 300mW operation
Transition frequency must support 100MHz operation

Mechanical Compatibility Requirements:

Package must be compatible with 6-TSSOP, SC-88, or SOT-363 footprints
Surface mount mounting type required
Moisture sensitivity level must be MSL 1 or equivalent

Compliance Requirements:

RoHS3 compliance mandatory
Active product status required

Two substitute parts meet these criteria: HN1C01FU-GR,LF (Toshiba Semiconductor and Storage) and MBT3904DW1T1G (onsemi).

Parameter Comparison

Parameter	PUMX2,115 (Nexperia)	HN1C01FU-GR,LF (Toshiba)	MBT3904DW1T1G (onsemi)
Transistor Type	2 NPN (Dual)	2 NPN (Dual)	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA	150mA	200mA
Voltage - Collector Emitter Breakdown (Max)	50V	50V	40V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	250mV @ 10mA, 100mA	300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	100nA	100nA	Not specified
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	200 @ 2mA, 6V	100 @ 10mA, 1V
Power - Max	300mW	200mW	150mW
Frequency - Transition	100MHz	80MHz	300MHz
Operating Temperature (TJ)	150°C	125°C	−55°C to 150°C
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Mounting Type	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

PUMX2,115 (Nexperia USA Inc.) — Primary Component

The PUMX2,115 is the original specification component with automotive-grade qualification (AEC-Q100) and active product status. This part is recommended for new designs requiring automotive compliance and maximum rated specifications of 50V breakdown voltage and 300mW power dissipation.

HN1C01FU-GR,LF (Toshiba Semiconductor and Storage) — Direct Substitute

The HN1C01FU-GR,LF is a functionally equivalent substitute with identical maximum collector current (150mA) and collector-emitter breakdown voltage (50V). Both parts share the same saturation voltage specification and package compatibility. This substitute is suitable for applications where Toshiba component sourcing is preferred or when supply constraints affect Nexperia availability. The maximum operating temperature is limited to 125°C compared to 150°C for the PUMX2,115; applications operating near the upper temperature limit require thermal analysis.

MBT3904DW1T1G (onsemi) — Conditional Substitute

The MBT3904DW1T1G is a substitute with higher collector current capability (200mA) and superior transition frequency (300MHz). However, the maximum collector-emitter breakdown voltage is reduced to 40V, which is below the PUMX2,115 specification of 50V. This part is suitable only for applications where the circuit design operates at voltages not exceeding 40V. The maximum power dissipation is also reduced to 150mW. This component is recommended for high-frequency switching applications where the 300MHz transition frequency provides performance advantages within the 40V voltage constraint.

All three parts maintain RoHS3 compliance, MSL 1 moisture sensitivity, and surface mount compatibility with 6-TSSOP/SC-88/SOT-363 packages.

Frequently Asked Questions (FAQ)

Q: Can the HN1C01FU-GR,LF replace the PUMX2,115 in all applications?

A: The HN1C01FU-GR,LF is electrically compatible with the PUMX2,115 for applications operating at or below 125°C junction temperature. Both parts support 150mA collector current and 50V breakdown voltage. Applications requiring operation at temperatures between 125°C and 150°C require thermal analysis to confirm the Toshiba part remains within acceptable operating limits.

Q: Is the MBT3904DW1T1G suitable as a direct replacement?

A: The MBT3904DW1T1G is not a direct replacement due to the reduced maximum collector-emitter breakdown voltage of 40V versus 50V for the PUMX2,115. This part is suitable only for circuit designs where the maximum applied voltage does not exceed 40V. The higher transition frequency (300MHz) and collector current capability (200mA) may provide performance benefits in high-frequency switching applications within this voltage constraint.

Q: Are all substitute parts automotive-qualified?

A: The PUMX2,115 carries AEC-Q100 automotive qualification. The HN1C01FU-GR,LF and MBT3904DW1T1G are not specified with automotive qualification in the provided data. Applications requiring automotive-grade components must use the PUMX2,115 or confirm alternative qualification status with the respective manufacturers.

Q: Do all parts use the same package footprint?

A: All three parts are compatible with 6-TSSOP, SC-88, and SOT-363 package footprints. The PUMX2,115 uses 6-TSSOP supplier packaging, the HN1C01FU-GR,LF uses US6 supplier packaging, and the MBT3904DW1T1G uses SC-88/SC70-6/SOT-363 supplier packaging. All are surface mount devices with identical land pattern compatibility.

Q: What is the moisture sensitivity level for these parts?

A: All three parts have MSL 1 (Unlimited) moisture sensitivity level, indicating no moisture-related storage or handling restrictions. Standard surface mount assembly processes are applicable without special moisture control measures.

Q: Can these parts be used interchangeably in existing designs?

A: Electrical interchangeability depends on circuit design parameters. The PUMX2,115 and HN1C01FU-GR,LF are interchangeable for applications operating within 125°C maximum junction temperature and using voltages up to 50V. The MBT3904DW1T1G requires circuit voltage verification to confirm operation within its 40V maximum rating. All parts maintain identical package footprints and MSL ratings.

Q: What are the key differences in DC current gain specifications?

A: The PUMX2,115 specifies minimum hFE of 120 at 1mA collector current and 6V collector-emitter voltage. The HN1C01FU-GR,LF specifies minimum hFE of 200 at 2mA and 6V, indicating higher current gain. The MBT3904DW1T1G specifies minimum hFE of 100 at 10mA and 1V. Applications sensitive to current gain variations require circuit analysis to confirm acceptable performance with each part's specified gain characteristics.

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