PUMH9/ZLZ Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMH9/ZLZ is a dual NPN pre-biased bipolar transistor manufactured by Nexperia USA Inc., designed for surface mount applications in 6-TSSOP packaging. This component integrates two NPN transistors with internal biasing resistors, eliminating the need for external base resistor networks in switching and amplification circuits.

The PUMH9/ZLZ is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and design updates. Substitute parts must maintain electrical compatibility across critical parameters including collector current, breakdown voltage, biasing resistor values, and package form factor.

Substiute Parts

PUMH9/ZLZ

Nexperia USA Inc.In Stock: 827PUMH9/ZLZ Datasheet

Current PartRFQ

PUMH9,165

Nexperia USA Inc.In Stock: 11125PUMH9,165 Datasheet

SimilarRFQ

ACX114YUQ-13R

Diodes IncorporatedIn Stock: 130181ACX114YUQ-13R Datasheet

SimilarRFQ

ACX114YUQ-7R

Diodes IncorporatedIn Stock: 52996ACX114YUQ-7R Datasheet

SimilarRFQ

ADC114YUQ-13

Diodes IncorporatedIn Stock: 21365ADC114YUQ-13 Datasheet

SimilarRFQ

ADC114YUQ-7

Diodes IncorporatedIn Stock: 2139ADC114YUQ-7 Datasheet

SimilarRFQ

DCX114YU-7-F

Diodes IncorporatedIn Stock: 125161DCX114YU-7-F Datasheet

SimilarRFQ

DDC114YU-7-F

Diodes IncorporatedIn Stock: 16952DDC114YU-7-F Datasheet

SimilarRFQ

MUN5214DW1T1G

onsemiIn Stock: 513794MUN5214DW1T1G Datasheet

SimilarRFQ

NSVMUN5214DW1T3G

onsemiIn Stock: 10123NSVMUN5214DW1T3G Datasheet

SimilarRFQ

RN1907,LF(CT

Toshiba Semiconductor and StorageIn Stock: 1172RN1907,LF(CT Datasheet

SimilarRFQ

RN4907,LF

Toshiba Semiconductor and StorageIn Stock: 18476RN4907,LF Datasheet

SimilarRFQ

RN4987,LF(CT

Toshiba Semiconductor and StorageIn Stock: 3100RN4987,LF(CT Datasheet

SimilarRFQ

SMUN5214DW1T1G

onsemiIn Stock: 100280SMUN5214DW1T1G Datasheet

SimilarRFQ

UMH9NTN

Rohm SemiconductorIn Stock: 305117UMH9NTN Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PUMH9/ZLZ is determined by the following critical parameters:

Transistor Configuration: The main part contains 2 NPN transistors with internal biasing. Substitute parts must maintain this dual NPN configuration or provide equivalent functional performance through alternative topologies (such as 1 NPN + 1 PNP combinations in specific applications).

Electrical Ratings: Maximum collector current (100 mA), collector-emitter breakdown voltage (50 V), and maximum power dissipation (300 mW) establish the operational envelope. Substitute parts must meet or exceed these ratings.

Internal Biasing Resistors: Base resistor (R1) of 10 kOhms and emitter-base resistor (R2) of 47 kOhms are critical to circuit function. Substitute parts must provide identical or functionally equivalent resistor values.

Package Compatibility: The 6-TSSOP, SC-88, and SOT-363 packages are mechanically and electrically interchangeable. Substitute parts in these packages maintain PCB layout compatibility.

Automotive Grade and AEC-Q101 Qualification: For applications requiring automotive-grade components, substitute parts must carry equivalent certifications.

RoHS3 Compliance: Environmental compliance status must be maintained for regulated applications.

Substitute parts are grouped into two categories: direct replacements from Nexperia (same manufacturer, active product status) and cross-manufacturer alternatives from Diodes Incorporated and onsemi that meet all electrical and mechanical parameters.

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: PUMH9,165

PUMH9,165 is the direct successor to PUMH9/ZLZ from the same manufacturer (Nexperia USA Inc.). This part maintains identical electrical specifications, internal biasing resistor values, and package compatibility. The transition from obsolete to active product status makes this the preferred replacement for all applications. PUMH9,165 is available in high inventory quantities (11,071 pieces) and carries ROHS3 compliance.

Secondary Recommendations for Dual NPN Configuration:

DDC114YU-7-F (Diodes Incorporated) and MUN5214DW1T1G (onsemi) provide dual NPN pre-biased transistor functionality with identical collector current, breakdown voltage, and biasing resistor specifications. Both parts are AEC-Q101 qualified and ROHS3 compliant. DDC114YU-7-F offers 200 mW power rating and MUN5214DW1T1G offers 250 mW power rating, both lower than the original 300 mW specification but sufficient for most applications within the 100 mA collector current envelope.

NSVMUN5214DW1T3G (onsemi) provides equivalent dual NPN functionality with 250 mW power rating and is available in high inventory (10,100 pieces).

Alternative Recommendations for Mixed Transistor Configuration:

ACX114YUQ-13R and ACX114YUQ-7R (Diodes Incorporated) provide 1 NPN + 1 PNP pre-biased transistor pairs with identical electrical ratings and biasing resistor values. These parts are suitable for applications requiring complementary transistor pairs and carry AEC-Q101 qualification. ACX114YUQ-7R is available in higher inventory (52,980 pieces).

For Automotive Applications:

ADC114YUQ-13 and ADC114YUQ-7 (Diodes Incorporated) provide dual NPN pre-biased transistor functionality with AEC-Q101 qualification and automotive-grade designation. These parts maintain all critical electrical parameters and are suitable for automotive circuit applications.

Inventory Availability Consideration:

MUN5214DW1T1G (onsemi) offers the highest inventory availability at 513,700 pieces, followed by DCX114YU-7-F (Diodes Incorporated) at 125,100 pieces. These options provide supply chain security for high-volume production.

Frequently Asked Questions (FAQ)

Q: Can PUMH9,165 be used as a direct replacement for PUMH9/ZLZ?

A: Yes. PUMH9,165 is the active product successor from Nexperia USA Inc. with identical electrical specifications, internal biasing resistor values (R1 = 10 kOhms, R2 = 47 kOhms), maximum collector current (100 mA), breakdown voltage (50 V), and package form factor (6-TSSOP/SOT-363). The only difference is product status (active vs. obsolete) and transition frequency specification availability.

Q: What is the difference between dual NPN and mixed NPN/PNP pre-biased transistor pairs?

A: Dual NPN parts (PUMH9/ZLZ, PUMH9,165, DDC114YU-7-F, MUN5214DW1T1G, NSVMUN5214DW1T3G, RN1907,LF(CT) contain two NPN transistors with internal biasing resistors. Mixed NPN/PNP parts (ACX114YUQ-13R, ACX114YUQ-7R, DCX114YU-7-F) contain one NPN and one PNP transistor. Selection depends on circuit topology requirements. Dual NPN parts are suitable for applications requiring two independent NPN switching or amplification stages. Mixed pairs are suitable for complementary push-pull or differential amplifier configurations.

Q: Are all substitute parts compatible with the original PCB layout?

A: Yes. All substitute parts listed use 6-TSSOP, SC-88, or SOT-363 surface mount packages, which are mechanically and electrically interchangeable. PCB footprints designed for PUMH9/ZLZ accept all listed substitute parts without modification.

Q: What is the significance of the internal biasing resistor values (R1 = 10 kOhms, R2 = 47 kOhms)?

A: These internal resistors establish the base bias network and determine the transistor's switching characteristics and input impedance. Substitute parts must maintain these exact values to ensure circuit performance consistency. Parts with different resistor values (such as ADC114YUQ-13 and ADC114YUQ-7, which offer 10 kOhms or 47 kOhms options) require circuit analysis to confirm compatibility.

Q: Is AEC-Q101 qualification required for all applications?

A: AEC-Q101 qualification is required for automotive applications. For non-automotive applications, this qualification is not mandatory. PUMH9,165, ACX114YUQ-13R, ACX114YUQ-7R, ADC114YUQ-13, and ADC114YUQ-7 carry AEC-Q101 qualification. DCX114YU-7-F, DDC114YU-7-F, MUN5214DW1T1G, NSVMUN5214DW1T3G, and RN1907,LF(CT) do not carry this qualification and are suitable for industrial and consumer applications.

Q: How do power dissipation ratings affect part selection?

A: The original PUMH9/ZLZ specifies 300 mW maximum power dissipation. Substitute parts with lower power ratings (200 mW for DCX114YU-7-F and DDC114YU-7-F, 250 mW for MUN5214DW1T1G and NSVMUN5214DW1T3G, 270 mW for ACX114YUQ-13R and ACX114YUQ-7R) are suitable for applications where actual power dissipation remains below the substitute part's rating. Circuit analysis is required to confirm that operating conditions do not exceed the substitute part's power limit.

Q: What is the difference between transition frequency specifications?

A: The original PUMH9/ZLZ specifies 230 MHz transition frequency. Substitute parts from Diodes Incorporated (ACX114YUQ-13R, ACX114YUQ-7R, ADC114YUQ-13, ADC114YUQ-7, DCX114YU-7-F, DDC114YU-7-F) and Toshiba (RN1907,LF(CT) specify 250 MHz, which exceeds the original specification. onsemi parts (MUN5214DW1T1G, NSVMUN5214DW1T3G) do not specify transition frequency. For high-frequency switching applications, parts with specified transition frequency of 250 MHz or higher are suitable replacements.

Q: Can parts with different transistor configurations be used interchangeably?

A: No. Dual NPN parts and mixed NPN/PNP parts have different circuit topologies and cannot be used interchangeably without circuit redesign. Dual NPN parts are suitable for applications requiring two independent NPN stages. Mixed NPN/PNP parts are suitable for complementary or differential configurations. Circuit schematic analysis is required to determine the appropriate configuration for the target application.