PUMH9,135 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PUMH9,135 is an active pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for applications requiring compact switching and amplification circuits with 50V collector-emitter breakdown voltage and 100mA maximum collector current. The part is RoHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is currently in active production status with 10,763 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when supply chain optimization requires alternative sourcing, or when design flexibility permits selection from multiple qualified manufacturers offering compatible electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	10	kOhms
Emitter-Base Resistor (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	100 @ 250µA, 5mA	mV
Maximum Power Dissipation	300	mW
Package Type	6-TSSOP / SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PUMH9,135 is determined by strict alignment of the following critical parameters:

Primary Substitution Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Base resistor (R1): 10kOhms
Emitter-base resistor (R2): 47kOhms
Package compatibility: 6-TSSOP / SOT-363 / SC-88 surface mount

Secondary Compatibility Factors:

RoHS3 compliance
MSL 1 rating
Active product status
Surface mount technology

Parts meeting all primary criteria are classified as direct electrical and mechanical equivalents. Parts with identical transistor configuration, voltage, and current ratings but differing internal resistor values are classified as functional alternatives requiring circuit validation. Parts with mixed transistor types (NPN/PNP combinations) are listed for reference but require application-specific assessment.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce (Max) V	R1 (kOhms)	R2 (kOhms)	Power (mW)	Package	Status
PUMH9,135	Nexperia USA Inc.	2 NPN - Pre-Biased	100	50	10	47	300	6-TSSOP	Active
DDC114YU-7-F	Diodes Incorporated	2 NPN - Pre-Biased	100	50	10	47	200	SOT-363	Active
MUN5214DW1T1G	onsemi	2 NPN - Pre-Biased	100	50	10	47	250	SC-88/SOT-363	Active
NSVMUN5214DW1T3G	onsemi	2 NPN - Pre-Biased	100	50	10	47	250	SC-88/SOT-363	Active
UMH11NTN	Rohm Semiconductor	2 NPN - Pre-Biased	100	50	10	10	150	UMT6	Active
UMH2NTN	Rohm Semiconductor	2 NPN - Pre-Biased	100	50	47	47	150	UMT6	Active
ACX114YUQ-7R	Diodes Incorporated	1 NPN, 1 PNP - Pre-Biased	100	50	10	47	270	SOT-363	Active
DCX114YU-7-F	Diodes Incorporated	1 NPN, 1 PNP - Pre-Biased	100	50	10	47	200	SOT-363	Active
RN4987,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP - Pre-Biased	100	50	10	47	200	US6	Active
ADC114YUQ-13	Diodes Incorporated	2 NPN - Pre-Biased	100	50	10/47	10/47	270	SOT-363	Active
UMH10NTN	Rohm Semiconductor	2 NPN - Pre-Biased	100	50	2.2	47	150	UMT6	Active

Engineering Selection Recommendations

Direct Electrical Equivalents (Identical Configuration):

The following parts satisfy all primary substitution criteria with matching transistor type (2 NPN - Pre-Biased), collector current (100mA), breakdown voltage (50V), and internal resistor values (R1: 10kOhms, R2: 47kOhms):

DDC114YU-7-F (Diodes Incorporated): Active status, RoHS3 compliant, MSL 1, SOT-363 package. Power rating 200mW is lower than PUMH9,135 (300mW).
MUN5214DW1T1G (onsemi): Active status, RoHS3 compliant, MSL 1, SC-88/SOT-363 package. Power rating 250mW. Vce saturation specification differs (250mV @ 300µA, 10mA vs. 100mV @ 250µA, 5mA).
NSVMUN5214DW1T3G (onsemi): Active status, RoHS3 compliant, MSL 1, SC-88/SOT-363 package. Identical electrical specifications to MUN5214DW1T1G.

Functional Alternatives (Different Internal Resistor Configuration):

UMH11NTN (Rohm Semiconductor): 2 NPN configuration, 100mA, 50V, but with R1: 10kOhms and R2: 10kOhms (differs from PUMH9,135 R2: 47kOhms). Active status, RoHS3 compliant, MSL 1. Power rating 150mW.
UMH2NTN (Rohm Semiconductor): 2 NPN configuration, 100mA, 50V, but with R1: 47kOhms and R2: 47kOhms. Active status, RoHS3 compliant, MSL 1. Power rating 150mW.
UMH10NTN (Rohm Semiconductor): 2 NPN configuration, 100mA, 50V, but with R1: 2.2kOhms and R2: 47kOhms. Active status, RoHS3 compliant, MSL 1. Power rating 150mW.

Mixed Transistor Type (Reference Only):

ACX114YUQ-7R, DCX114YU-7-F, RN4987,LF(CT: These parts contain 1 NPN and 1 PNP transistor configuration, differing from the dual NPN architecture of PUMH9,135. Listed for reference in applications where mixed polarity pre-biased transistors are acceptable.

Compliance and Availability:

All listed parts maintain active production status, RoHS3 compliance, and MSL 1 rating. Selection should prioritize parts with matching internal resistor values and power dissipation ratings appropriate for the target application.

Frequently Asked Questions (FAQ)

Q: Can DDC114YU-7-F replace PUMH9,135 directly in all applications?

A: DDC114YU-7-F meets all primary electrical criteria (2 NPN, 100mA, 50V, R1: 10kOhms, R2: 47kOhms) and is package-compatible (SOT-363). However, its maximum power dissipation is 200mW compared to PUMH9,135 at 300mW. Applications operating near thermal limits require verification that the lower power rating is acceptable.

Q: What is the significance of internal resistor values (R1 and R2)?

A: Internal resistor values determine the biasing characteristics and switching speed of the pre-biased transistor. PUMH9,135 uses R1: 10kOhms and R2: 47kOhms. Parts with different resistor values (such as UMH11NTN with R1: 10kOhms, R2: 10kOhms) will exhibit different DC current gain and saturation voltage characteristics. Substitution with different resistor values requires circuit-level analysis.

Q: Are parts with 1 NPN and 1 PNP configuration (ACX114YUQ-7R, DCX114YU-7-F) suitable replacements?

A: These parts share identical electrical ratings (100mA, 50V, R1: 10kOhms, R2: 47kOhms) but differ in transistor polarity configuration. They are not direct replacements for applications requiring dual NPN functionality. They are listed as reference alternatives only for designs that can accommodate mixed-polarity transistor pairs.

Q: What is the difference between 6-TSSOP, SOT-363, SC-88, and UMT6 packages?

A: These are equivalent package designations for the same 6-pin surface mount form factor. 6-TSSOP, SOT-363, and SC-88 refer to the same physical package used by Nexperia, Diodes, onsemi, and Toshiba. UMT6 is Rohm Semiconductor's designation for the identical package. All are mechanically and electrically compatible for PCB placement.

Q: Why do some substitute parts have lower power ratings (150mW to 200mW vs. 300mW)?

A: Lower power ratings reflect different thermal design or manufacturing processes. Parts with 150mW or 200mW ratings are suitable for applications where total power dissipation remains within the specified limit. Applications requiring sustained operation at high power levels should prioritize parts with 250mW or higher ratings.

Q: Is RoHS3 compliance and MSL 1 rating consistent across all listed substitutes?

A: All listed substitute parts maintain RoHS3 compliance and MSL 1 (unlimited moisture sensitivity) rating, matching PUMH9,135. This ensures environmental and handling compatibility across all alternatives.

Q: Can UMH10NTN, UMH11NTN, or UMH2NTN be used interchangeably?

A: These Rohm parts share identical electrical ratings (100mA, 50V, 2 NPN configuration) but differ in internal resistor values. UMH10NTN (R1: 2.2kOhms, R2: 47kOhms), UMH11NTN (R1: 10kOhms, R2: 10kOhms), and UMH2NTN (R1: 47kOhms, R2: 47kOhms) are not interchangeable without circuit analysis. Selection depends on required biasing characteristics for the specific application.

Q: What inventory levels are available for each substitute part?

A: Current stock levels are: PUMH9,135 (10,763 units), DDC114YU-7-F (16,877 units), MUN5214DW1T1G (513,700 units), NSVMUN5214DW1T3G (10,100 units), UMH2NTN (187,140 units), UMH11NTN (44,100 units), UMH10NTN (20,795 units), ACX114YUQ-7R (52,980 units), DCX114YU-7-F (125,100 units), RN4987,LF(CT (3,067 units), and ADC114YUQ-13 (21,323 units). Availability should be confirmed with suppliers for current procurement.

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