PUMH4/ZLX Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMH4/ZLX is a pre-biased dual NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The PUMH4/ZLX is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility for new designs and production continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMH4/ZLX is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Base resistor value: 10kOhms
Package compatibility: 6-TSSOP, SC-88, SOT-363 surface mount packages
RoHS3 compliance and MSL 1 rating

Secondary Compatibility Parameters:

DC current gain (hFE) minimum specification
Vce saturation voltage
Collector cutoff current
Maximum power dissipation

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (2 NPN Configuration): Parts maintaining identical transistor configuration (2 NPN), base resistor value (10kOhms), and all primary electrical specifications. These parts provide direct functional replacement with minimal circuit redesign.

Category B - Functional Equivalents with Parameter Variations: Parts with 2 NPN configuration and compatible electrical specifications but with variations in secondary parameters such as DC current gain, saturation voltage, or transition frequency. These parts require circuit validation but maintain core functionality.

Category C - Mixed Configuration Alternatives (1 NPN, 1 PNP): Parts with different transistor configuration (1 NPN, 1 PNP) suitable only for applications where the mixed configuration is acceptable. These require circuit redesign and are not direct substitutes.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	hFE (Min) @ Ic, Vce	Vce Sat (Max) mV	Power (Max) mW	Package	Product Status
PUMH4/ZLX	Nexperia USA Inc.	2 NPN - Pre-Biased (Dual)	100	50	10	200 @ 1mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	Obsolete
PUMH4,115	Nexperia USA Inc.	2 NPN - Pre-Biased (Dual)	100	50	10	200 @ 1mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	Active
DDC114TU-7-F	Diodes Incorporated	2 NPN - Pre-Biased (Dual)	100	50	10	100 @ 1mA, 5V	300 @ 100µA, 1mA	200	SOT-363	Active
MUN5215DW1T1G	onsemi	2 NPN - Pre-Biased (Dual)	100	50	10	160 @ 5mA, 10V	250 @ 1mA, 10mA	250	SC-88/SC70-6/SOT-363	Active
NSVMUN5215DW1T1G	onsemi	2 NPN - Pre-Biased (Dual)	100	50	10	160 @ 5mA, 10V	250 @ 1mA, 10mA	250	SC-88/SC70-6/SOT-363	Active
RN1911(T5L,F,T)	Toshiba Semiconductor and Storage	2 NPN - Pre-Biased (Dual)	100	50	4.7	120 @ 1mA, 5V	300 @ 250µA, 5mA	100	US6	Active
RN1971TE85LF	Toshiba Semiconductor and Storage	2 NPN - Pre-Biased (Dual)	100	50	10	120 @ 1mA, 5V	300 @ 250µA, 5mA	200	US6	Active
UMH4NTN	Rohm Semiconductor	2 NPN - Pre-Biased (Dual)	100	50	10	100 @ 1mA, 5V	300 @ 1mA, 10mA	150	UMT6	Active
DCX114TU-7-F	Diodes Incorporated	1 NPN, 1 PNP - Pre-Biased (Dual)	100	50	10	100 @ 1mA, 5V	300 @ 100µA, 1mA	200	SOT-363	Active
RN4991(T5L,F,T)	Toshiba Semiconductor and Storage	1 NPN, 1 PNP - Pre-Biased (Dual)	100	50	10	120 @ 1mA, 5V	300 @ 250µA, 5mA	200	US6	Active

Engineering Selection Recommendations

Recommended Primary Substitute: PUMH4,115

The PUMH4,115 manufactured by Nexperia USA Inc. is the direct active equivalent of the obsolete PUMH4/ZLX. This part maintains identical electrical specifications including 200mA minimum DC current gain at 1mA/5V, 150mV maximum saturation voltage, and 300mW maximum power dissipation. The PUMH4,115 is supplied in Tape & Reel packaging with AEC-Q100 automotive qualification and carries Active product status. RoHS3 compliance and MSL 1 rating are maintained. This part requires no circuit modification and provides complete functional replacement.

Secondary Substitutes for 2 NPN Configuration:

MUN5215DW1T1G and NSVMUN5215DW1T1G (onsemi): Both parts maintain 2 NPN pre-biased configuration with 100mA collector current and 50V breakdown voltage. DC current gain is specified at 160 minimum (5mA/10V), lower than the original 200 minimum specification. Saturation voltage is 250mV maximum, lower than the original 150mV specification. Maximum power dissipation is 250mW, reduced from 300mW. These parts are suitable for applications where the lower gain and reduced power rating are acceptable. Both carry Active status and RoHS3 compliance.

DDC114TU-7-F (Diodes Incorporated): This part maintains 2 NPN configuration with 100mA collector current and 50V breakdown voltage. DC current gain is 100 minimum at 1mA/5V, significantly lower than the original specification. Saturation voltage is 300mV maximum, higher than the original 150mV. Maximum power dissipation is 200mW. This part is suitable only for applications tolerating reduced gain and higher saturation voltage. Active status and RoHS3 compliance are maintained.

UMH4NTN (Rohm Semiconductor): This part maintains 2 NPN configuration with 100mA collector current and 50V breakdown voltage. DC current gain is 100 minimum at 1mA/5V. Saturation voltage is 300mV maximum. Maximum power dissipation is 150mW, significantly reduced from 300mW. This part is suitable for low-power applications only. Active status and RoHS3 compliance are maintained.

RN1971TE85LF (Toshiba Semiconductor and Storage): This part maintains 2 NPN configuration with 100mA collector current, 50V breakdown voltage, and 10kOhms base resistor matching the original specification. DC current gain is 120 minimum at 1mA/5V. Saturation voltage is 300mV maximum. Maximum power dissipation is 200mW. This part is suitable for applications tolerating reduced gain and power rating. Active status and RoHS compliance are maintained.

RN1911(T5L,F,T) (Toshiba Semiconductor and Storage): This part maintains 2 NPN configuration with 100mA collector current and 50V breakdown voltage. Base resistor is 4.7kOhms, differing from the original 10kOhms specification. DC current gain is 120 minimum at 1mA/5V. Maximum power dissipation is 100mW, significantly reduced. This part is suitable only for low-power applications and requires circuit validation due to base resistor difference.

Mixed Configuration Alternatives (Not Direct Substitutes):

DCX114TU-7-F and RN4991(T5L,F,T): Both parts feature 1 NPN and 1 PNP pre-biased configuration, differing from the original 2 NPN configuration. These parts are suitable only for applications where the mixed configuration is required and are not direct substitutes. Circuit redesign is necessary.

Frequently Asked Questions (FAQ)

Q: Can PUMH4,115 be used as a direct replacement for PUMH4/ZLX?

A: Yes. PUMH4,115 is the active equivalent of the obsolete PUMH4/ZLX. Both parts are manufactured by Nexperia USA Inc. and maintain identical electrical specifications including transistor configuration (2 NPN), collector current (100mA), breakdown voltage (50V), base resistor (10kOhms), DC current gain (200 minimum), saturation voltage (150mV maximum), and power rating (300mW). No circuit modification is required.

Q: What is the difference between PUMH4,115 and MUN5215DW1T1G?

A: Both parts maintain 2 NPN pre-biased configuration with 100mA collector current and 50V breakdown voltage. Key differences are: DC current gain is 160 minimum (MUN5215DW1T1G) versus 200 minimum (PUMH4,115); saturation voltage is 250mV maximum (MUN5215DW1T1G) versus 150mV maximum (PUMH4,115); maximum power dissipation is 250mW (MUN5215DW1T1G) versus 300mW (PUMH4,115). MUN5215DW1T1G is suitable for applications where these parameter variations are acceptable.

Q: Are DCX114TU-7-F and RN4991(T5L,F,T) suitable replacements for PUMH4/ZLX?

A: No. Both parts feature 1 NPN and 1 PNP pre-biased configuration, whereas PUMH4/ZLX is 2 NPN. These parts are not direct substitutes and require circuit redesign. They are suitable only for applications specifically requiring mixed NPN/PNP configuration.

Q: What is the significance of the base resistor value difference in RN1911(T5L,F,T)?

A: RN1911(T5L,F,T) has a 4.7kOhms base resistor compared to the original 10kOhms specification in PUMH4/ZLX. This difference affects the biasing characteristics and switching behavior of the transistor. Circuit validation is required before substitution.

Q: Can I use UMH4NTN in high-power applications?

A: No. UMH4NTN has a maximum power dissipation rating of 150mW, compared to 300mW for PUMH4/ZLX. This part is suitable only for low-power applications. Using it in applications requiring higher power dissipation will result in device failure.

Q: What packaging options are available for substitutes?

A: Substitute parts are available in multiple surface mount packages: 6-TSSOP (PUMH4,115, DDC114TU-7-F), SC-88/SC70-6/SOT-363 (MUN5215DW1T1G, NSVMUN5215DW1T1G), UMT6 (UMH4NTN), and US6 (RN1911, RN1971TE85LF, RN4991). Verify package compatibility with your PCB layout before selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed maintain RoHS3 compliance. PUMH4,115 additionally carries AEC-Q100 automotive qualification. All parts have MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the difference between MUN5215DW1T1G and NSVMUN5215DW1T1G?

A: Both parts are manufactured by onsemi and maintain identical electrical specifications. The primary difference is packaging: MUN5215DW1T1G is supplied in Cut Tape (CT) & Digi-Reel format, while NSVMUN5215DW1T1G is supplied in Tape & Reel (TR) format. Electrical performance is identical.

Q: Which substitute offers the closest electrical match to PUMH4/ZLX?

A: PUMH4,115 offers the closest electrical match, maintaining all original specifications. For alternative manufacturers, MUN5215DW1T1G and NSVMUN5215DW1T1G provide the most compatible performance with minor variations in DC current gain and saturation voltage.

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