PUMH2/ZLX Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMH2/ZLX is a pre-biased dual NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal base and emitter-base resistors, designed for switching and amplification applications in compact form factors. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility with existing designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	47	kΩ
Emitter-Base Resistor (R2)	47	kΩ
DC Current Gain (hFE Min)	80	@ 5mA, 5V
Vce Saturation (Max)	150	mV @ 500µA, 10mA
Maximum Power Dissipation	300	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMH2/ZLX is determined by the following critical parameters:

Primary Substitution Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 50 V
Internal base resistor: 47 kΩ
Internal emitter-base resistor: 47 kΩ
Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363
RoHS3 compliance and MSL 1 rating

Substitution Groups:

Group 1: Direct Electrical Equivalents (2 NPN Configuration) Parts with identical transistor configuration (2 NPN), matching all critical electrical parameters, and compatible package options. These parts provide direct functional replacement with no circuit modifications required.

Group 2: Functional Equivalents with Minor Parameter Variations (2 NPN Configuration) Parts with 2 NPN configuration and matching core electrical specifications but with acceptable variations in secondary parameters such as transition frequency, saturation voltage, or power dissipation ratings. These parts function as substitutes in most applications.

Group 3: Mixed Configuration Alternatives (1 NPN, 1 PNP) Parts with complementary NPN/PNP configuration. These are suitable only for applications where the dual NPN configuration is not a circuit requirement and where the mixed configuration provides functional equivalence.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(br) V	R1 kΩ	R2 kΩ	hFE Min	Vce Sat (Max) mV	Power (Max) mW	Package	Status
PUMH2/ZLX	Nexperia USA Inc.	2 NPN	100	50	47	47	80 @ 5mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	Obsolete
PUMH2,115	NXP Semiconductors	2 NPN	100	50	47	47	80 @ 5mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	Active
DDC144EU-7-F	Diodes Incorporated	2 NPN	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	200	SOT-363	Active
MUN5213DW1T1G	onsemi	2 NPN	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	Active
MUN5213DW1T3G	onsemi	2 NPN	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	Active
NSVMUN5213DW1T3G	onsemi	2 NPN	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	Active
RN1904,LF(CT	Toshiba Semiconductor and Storage	2 NPN	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	US6	Active
SMUN5213DW1T1G	onsemi	2 NPN	100	50	47	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	187	SC-88/SOT-363	Active
DCX144EU-7-F	Diodes Incorporated	1 NPN, 1 PNP	100	50	47	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	200	SOT-363	Active
RN4904,LF	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	US6	Active
RN4984,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	47	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	US6	Active

Engineering Selection Recommendations

Primary Recommendation: PUMH2,115

The PUMH2,115 from NXP Semiconductors is the direct active equivalent of the obsolete PUMH2/ZLX. This part maintains identical electrical specifications, including transistor configuration (2 NPN), current ratings, voltage ratings, internal resistor values, and power dissipation. The part is manufactured by the same parent company (NXP/Nexperia) and carries active product status with ROHS3 compliance and MSL 1 rating. This part requires no circuit modifications and provides the highest level of compatibility.

Secondary Recommendations: onsemi MUN5213 Series

The MUN5213DW1T1G, MUN5213DW1T3G, NSVMUN5213DW1T3G, and SMUN5213DW1T1G from onsemi are functionally equivalent 2 NPN pre-biased transistors with matching core electrical parameters. These parts maintain the 100 mA collector current, 50 V breakdown voltage, and 47 kΩ internal resistor configuration. Minor variations exist in saturation voltage (250 mV vs. 150 mV) and power dissipation ratings (187–250 mW vs. 300 mW), which are acceptable in most switching applications. The NSVMUN5213DW1T3G and SMUN5213DW1T1G carry AEC-Q101 automotive qualification, suitable for automotive-grade applications. All onsemi parts are active with ROHS3 compliance.

Tertiary Recommendations: Diodes Incorporated DDC144EU-7-F

The DDC144EU-7-F is a 2 NPN pre-biased transistor with matching core specifications but reduced power dissipation (200 mW) and slightly lower DC current gain (68 vs. 80). This part is suitable for applications where the lower power rating is acceptable. The part is active with ROHS3 compliance and available in high inventory quantities.

Alternative Recommendations: Toshiba RN1904,LF(CT

The RN1904,LF(CT from Toshiba is a 2 NPN pre-biased transistor with matching electrical specifications and active product status. This part is suitable where Toshiba component sourcing is preferred. The US6 package is mechanically compatible with the 6-TSSOP/SOT-363 family.

Mixed Configuration Alternatives: DCX144EU-7-F, RN4904,LF, RN4984,LF(CT

These parts feature 1 NPN and 1 PNP pre-biased transistor configuration. They are suitable only for applications where the complementary configuration provides functional equivalence and where the circuit design does not require dual NPN transistors. These parts maintain matching voltage, current, and resistor specifications but differ in transistor topology.

Frequently Asked Questions (FAQ)

Q1: Can PUMH2,115 be used as a direct replacement for PUMH2/ZLX?

Yes. PUMH2,115 is the active equivalent manufactured by NXP Semiconductors with identical electrical specifications, internal resistor values, package compatibility, and compliance ratings. No circuit modifications are required.

Q2: What are the key differences between the onsemi MUN5213 series and the original PUMH2/ZLX?

The MUN5213 series maintains the same transistor configuration (2 NPN), collector current (100 mA), and breakdown voltage (50 V). Minor differences include saturation voltage (250 mV vs. 150 mV at different test conditions) and power dissipation (187–250 mW vs. 300 mW). These variations are acceptable in most switching applications. The MUN5213 series is actively manufactured with automotive-grade options available.

Q3: Are the Toshiba RN1904 and RN4984 parts suitable replacements?

RN1904,LF(CT is a direct 2 NPN equivalent with matching specifications and is suitable for direct replacement. RN4984,LF(CT features a mixed 1 NPN, 1 PNP configuration and is suitable only if the circuit design accommodates the complementary transistor topology.

Q4: What is the difference between the Diodes Incorporated DDC144EU-7-F and the original part?

The DDC144EU-7-F maintains the 2 NPN configuration, 100 mA collector current, 50 V breakdown voltage, and 47 kΩ internal resistors. It differs in power dissipation (200 mW vs. 300 mW) and DC current gain (68 vs. 80). These differences are acceptable in applications where the lower power rating is sufficient.

Q5: Can parts with 1 NPN, 1 PNP configuration replace the dual NPN PUMH2/ZLX?

Parts such as DCX144EU-7-F, RN4904,LF, and RN4984,LF(CT feature complementary transistor configuration. These are suitable only if the circuit design does not require dual NPN transistors and if the mixed configuration provides functional equivalence. Direct replacement is not possible without circuit modification.

Q6: What package options are available for substitutes?

The original PUMH2/ZLX uses the 6-TSSOP package. Substitute parts are available in 6-TSSOP, SC-88, SOT-363, and US6 packages. All packages are mechanically and electrically compatible within the pre-biased transistor family. Verify PCB footprint compatibility before selection.

Q7: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings, matching the original PUMH2/ZLX specifications.

Q8: Which substitute part has the highest inventory availability?

SMUN5213DW1T1G from onsemi has the highest inventory availability at 380,300 pieces in stock, followed by NSVMUN5213DW1T3G at 55,200 pieces. PUMH2,115 has 8,600 pieces available.

Q9: Are automotive-grade versions available?

Yes. NSVMUN5213DW1T3G and SMUN5213DW1T1G from onsemi carry AEC-Q101 automotive qualification and are suitable for automotive applications requiring pre-biased dual NPN transistors.

Q10: What is the significance of the transition frequency parameter?

Transition frequency (fT) indicates the frequency at which transistor gain begins to decrease. The original PUMH2/ZLX specifies 230 MHz. Substitute parts specify 200–250 MHz. For most switching applications, this variation is not critical. For high-frequency applications, verify that the selected substitute meets the required frequency performance.

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