PUMH2F Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PUMH2F is an active pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for switching and amplification applications in automotive-grade circuits. The part operates at 50V collector-emitter breakdown voltage with 100mA maximum collector current and 300mW power dissipation. PUMH2F is ROHS3 compliant, AEC-Q101 qualified for automotive applications, and carries unlimited moisture sensitivity level (MSL 1). Equivalent and substitute parts are necessary when addressing supply chain constraints, inventory availability, or design flexibility across multiple manufacturers while maintaining electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	47	kOhms
Resistor - Emitter Base (R2)	47	kOhms
Power - Max	300	mW
Frequency - Transition	230	MHz
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMH2F is determined by strict electrical and mechanical compatibility across the following critical parameters:

Primary Substitution Criteria:

Transistor configuration: 2 NPN - Pre-Biased (Dual)
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 47kOhms
Internal emitter-base resistor (R2): 47kOhms
Surface mount packaging: 6-TSSOP, SC-88, or SOT-363
Moisture sensitivity level: 1 (Unlimited)
RoHS3 compliance

Secondary Compatibility Factors:

DC current gain (hFE) minimum specifications
Vce saturation characteristics
Transition frequency performance
Power dissipation rating

Substitute parts listed below meet all primary criteria. Variations in secondary parameters (hFE, Vce saturation, transition frequency, power rating) are within acceptable engineering tolerances for dual NPN pre-biased transistor applications and do not affect functional interchangeability in standard switching and amplification circuits.

Parameter Comparison

Parameter	PUMH2F (Nexperia)	DDC144EU-7-F (Diodes Inc.)	MUN5213DW1T1G (onsemi)	MUN5213DW1T3G (onsemi)	RN1904,LF(CT (Toshiba)	UMH2N-TP (Micro Commercial)
Transistor Type	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased	2 NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V	50 V
Resistor - Base (R1)	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms	47 kOhms
DC Current Gain (hFE) (Min)	80 @ 5mA, 5V	68 @ 5mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 10mA, 5V	68 @ 5mA, 5V
Vce Saturation (Max)	150 mV @ 500µA, 10mA	300 mV @ 500µA, 10mA	250 mV @ 300µA, 10mA	250 mV @ 300µA, 10mA	300 mV @ 250µA, 5mA	300 mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1 µA	500 nA	500 nA	500 nA	500 nA	500 nA
Frequency - Transition	230 MHz	250 MHz	—	—	250 MHz	250 MHz
Power - Max	300 mW	200 mW	250 mW	250 mW	200 mW	150 mW
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP	SOT-363	SC-88/SC70-6/SOT-363	SC-88/SC70-6/SOT-363	US6	SOT-363
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active	Active

Engineering Selection Recommendations

All listed substitute parts are active products with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring compatibility with automotive and industrial manufacturing processes. Selection among equivalent parts should be based on the following engineering considerations:

For Direct Electrical Equivalence: MUN5213DW1T1G and MUN5213DW1T3G (onsemi) provide the closest electrical match to PUMH2F, with identical DC current gain specifications (80 @ 5mA, 10V) and comparable Vce saturation characteristics (250mV). Both variants are available in SC-88/SC70-6/SOT-363 packaging and support the same 50V/100mA operating envelope.

For Enhanced Performance Margin: DDC144EU-7-F (Diodes Incorporated) and RN1904,LF(CT (Toshiba) offer higher transition frequency (250MHz vs. 230MHz) and lower collector cutoff current (500nA vs. 1µA), providing improved switching speed and reduced leakage characteristics. Both are available in SOT-363 and US6 packages respectively.

For Power-Constrained Applications: UMH2N-TP (Micro Commercial Co) operates at reduced maximum power dissipation (150mW vs. 300mW) while maintaining full electrical functionality. This part is suitable for applications where thermal management is critical.

Inventory and Availability: All substitute parts maintain active product status with substantial stock levels. Selection should account for supply chain logistics and preferred supplier relationships within your organization.

Frequently Asked Questions (FAQ)

Q: Can PUMH2F be directly replaced with DDC144EU-7-F without circuit modification?

A: Yes. Both parts share identical transistor configuration (2 NPN - Pre-Biased), internal resistor values (47kOhms R1 and R2), maximum collector current (100mA), and collector-emitter breakdown voltage (50V). Electrical performance differences (hFE, Vce saturation, transition frequency) fall within acceptable tolerances for standard switching applications. Package compatibility exists across 6-TSSOP, SC-88, and SOT-363 variants.

Q: What is the difference between MUN5213DW1T1G and MUN5213DW1T3G?

A: Both parts are electrically identical with matching specifications for DC current gain, Vce saturation, collector current, and breakdown voltage. The suffix designations (T1G vs. T3G) indicate different manufacturing date codes or tape reel configurations. Selection between these variants does not affect circuit performance.

Q: Are there any package compatibility issues when substituting PUMH2F with RN1904,LF(CT?

A: Both parts support the same package family (6-TSSOP, SC-88, SOT-363). RN1904,LF(CT is supplied in US6 package format, which is mechanically and electrically equivalent to SOT-363. PCB footprint compatibility is maintained across all listed substitutes.

Q: Does UMH2N-TP have sufficient power rating for PUMH2F applications?

A: UMH2N-TP operates at 150mW maximum power dissipation compared to PUMH2F at 300mW. Substitution is valid only when circuit power dissipation remains below 150mW. For applications requiring the full 300mW capability, alternative substitutes (DDC144EU-7-F, MUN5213DW1T1G, MUN5213DW1T3G, or RN1904,LF(CT) are recommended.

Q: Are all substitute parts automotive-grade qualified?

A: PUMH2F carries AEC-Q101 automotive qualification. While substitute parts listed are active products with ROHS3 compliance and unlimited MSL, specific automotive qualification status varies by manufacturer. Verify AEC-Q101 or equivalent automotive certification requirements with your design and procurement teams before final part selection.

Q: What is the significance of transition frequency differences among substitute parts?

A: Transition frequency (fT) indicates maximum switching speed capability. PUMH2F operates at 230MHz, while DDC144EU-7-F, RN1904,LF(CT, and UMH2N-TP operate at 250MHz. Higher transition frequency provides improved high-frequency performance margin but does not affect functionality in standard switching applications operating below these frequency limits.

Q: Can RN4984,LF(CT be used as a substitute for PUMH2F?

A: No. RN4984,LF(CT contains 1 NPN and 1 PNP transistor configuration, whereas PUMH2F contains 2 NPN transistors. This fundamental difference in transistor type makes RN4984,LF(CT incompatible for direct substitution in circuits designed for dual NPN operation.

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