PUMH24,115 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PUMH24,115 is an active pre-biased dual NPN bipolar junction transistor manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for applications requiring compact switching and amplification circuits with integrated base bias networks. The part is AEC-Q100 qualified for automotive applications and maintains ROHS3 compliance with unlimited moisture sensitivity rating.

Substitute parts become necessary when primary inventory is unavailable, when design requirements permit higher current ratings, or when alternative qualified sources are required for supply chain continuity.

Substiute Parts

PUMH24,115
Nexperia USA Inc.In Stock: 2796PUMH24,115 Datasheet
PUMH24,115
Current Part
MUN5236DW1T1G
onsemiIn Stock: 9520MUN5236DW1T1G Datasheet
MUN5236DW1T1G
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Key Parameters

Parameter Value Unit
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Current (Max) 20 mA
Collector-Emitter Breakdown Voltage (Max) 50 V
Base Resistor (R1) 100 kOhms
Emitter-Base Resistor (R2) 100 kOhms
DC Current Gain (hFE Min) 80
Vce Saturation (Max) 150 mV
Power Dissipation (Max) 300 mW
Package Type 6-TSSOP / SC-88 / SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Grade Automotive
Qualification AEC-Q100

Substitute Part Grouping Explanation

Substitution of the PUMH24,115 is permissible with the MUN5236DW1T1G based on the following criteria:

Matching Parameters (Required for Substitution):

  • Transistor configuration: Both are dual pre-biased NPN types
  • Collector-emitter breakdown voltage: Both rated at 50V maximum
  • Base resistor value: Both feature 100kOhms R1
  • Emitter-base resistor value: Both feature 100kOhms R2
  • DC current gain minimum: Both specify 80 @ specified operating points
  • Package compatibility: Both available in 6-TSSOP / SC-88 / SOT-363 form factors
  • Surface mount technology: Both are surface mount devices
  • Compliance: Both ROHS3 compliant with unlimited MSL rating
  • Product status: Both are active products

Allowable Parameter Variations:

  • Collector current maximum: PUMH24,115 rated at 20mA; MUN5236DW1T1G rated at 100mA (higher rating is acceptable for lower-current applications)
  • Power dissipation: PUMH24,115 rated at 300mW; MUN5236DW1T1G rated at 250mW (acceptable within design margins for equivalent applications)
  • Vce saturation: PUMH24,115 at 150mV; MUN5236DW1T1G at 250mV (within acceptable switching performance range)
  • Collector cutoff current: PUMH24,115 at 1µA; MUN5236DW1T1G at 500nA (lower leakage is acceptable)

Parameter Comparison

Parameter PUMH24,115 (Nexperia) MUN5236DW1T1G (onsemi) Unit
Manufacturer Nexperia USA Inc. onsemi
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Collector Current (Max) 20 100 mA
Collector-Emitter Breakdown Voltage (Max) 50 50 V
Base Resistor (R1) 100 100 kOhms
Emitter-Base Resistor (R2) 100 100 kOhms
DC Current Gain (hFE Min) 80 @ 5mA, 5V 80 @ 5mA, 10V
Vce Saturation (Max) 150 @ 250µA, 5mA 250 @ 300µA, 10mA mV
Current - Collector Cutoff (Max) 1 500 µA / nA
Power - Max 300 250 mW
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited)
Product Status Active Active

Engineering Selection Recommendations

Primary Part Selection (PUMH24,115): The PUMH24,115 is the specified component for designs requiring the exact electrical and thermal characteristics defined in the original design documentation. This part maintains AEC-Q100 automotive qualification and is actively manufactured by Nexperia USA Inc. with current inventory availability.

Substitute Part Selection (MUN5236DW1T1G): The MUN5236DW1T1G from onsemi is a qualified substitute for applications where the PUMH24,115 is unavailable. This substitute is appropriate for designs operating within the following conditions:

  • Collector current requirements not exceeding 20mA (the substitute is rated to 100mA, providing design margin)
  • Applications where Vce saturation up to 250mV is acceptable (versus 150mV nominal for the primary part)
  • Designs tolerant of lower collector cutoff current (500nA versus 1µA)
  • Surface mount assembly processes compatible with 6-TSSOP / SC-88 / SOT-363 packages

Both parts maintain identical biasing resistor networks (100kOhms R1 and R2), ensuring equivalent circuit behavior in pre-biased switching applications. Both are ROHS3 compliant and carry unlimited moisture sensitivity ratings, eliminating special handling requirements.

The MUN5236DW1T1G is actively produced by onsemi and maintains higher current capacity, making it suitable for designs requiring future scalability or where higher current margins are beneficial.

Frequently Asked Questions (FAQ)

Q: Can the MUN5236DW1T1G directly replace the PUMH24,115 in existing PCB layouts?

A: Yes. Both parts use identical 6-TSSOP / SC-88 / SOT-363 package footprints and pin configurations. No PCB layout modifications are required. Pin-to-pin compatibility is confirmed across all package variants.

Q: What is the primary difference between these two pre-biased transistors?

A: The MUN5236DW1T1G has a higher maximum collector current rating (100mA versus 20mA) and slightly higher Vce saturation voltage (250mV versus 150mV). The internal biasing resistor networks are identical at 100kOhms for both R1 and R2. Both maintain the same 50V breakdown voltage and dual NPN configuration.

Q: Are there any thermal or power dissipation concerns when substituting?

A: The PUMH24,115 is rated for 300mW maximum power dissipation, while the MUN5236DW1T1G is rated for 250mW. For applications operating within the original 20mA collector current specification, power dissipation remains well within the MUN5236DW1T1G's 250mW rating. Thermal performance is equivalent for equivalent operating conditions.

Q: Do both parts meet automotive qualification requirements?

A: The PUMH24,115 carries AEC-Q100 automotive qualification. The MUN5236DW1T1G is an active onsemi product with ROHS3 compliance. Confirm automotive qualification requirements with your design specifications and onsemi documentation for the MUN5236DW1T1G if AEC-Q100 certification is mandatory for your application.

Q: What is the significance of the internal biasing resistors (R1 and R2)?

A: Both parts feature identical 100kOhms base resistors (R1) and 100kOhms emitter-base resistors (R2). These internal resistors establish the pre-bias network, eliminating the need for external biasing components. Identical resistor values ensure equivalent switching thresholds and circuit behavior between the two parts.

Q: Can the MUN5236DW1T1G be used in applications requiring the full 20mA specification?

A: Yes. The MUN5236DW1T1G is rated for 100mA maximum collector current, providing a 5x safety margin above the 20mA requirement. This higher rating does not degrade performance at lower currents and is fully compatible with 20mA operating specifications.

Q: Are there any differences in moisture sensitivity or handling requirements?

A: Both parts carry MSL (Moisture Sensitivity Level) rating of 1 (Unlimited), indicating no special moisture control or baking procedures are required. Handling and storage requirements are identical.

Q: What compliance certifications apply to both parts?

A: Both the PUMH24,115 and MUN5236DW1T1G are ROHS3 compliant and REACH unaffected. Both carry ECCN classification EAR99 and HTSUS code 8541.21.0095.

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