PUMH18,115 Pre-Biased Dual NPN Transistor Equivalent & Substitute Parts

Part Overview

The PUMH18,115 is an active pre-biased dual NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for 50V operation at up to 100mA collector current with 300mW maximum power dissipation. The device is AEC-Q100 qualified for automotive applications and RoHS3 compliant.

Substitute parts are necessary when the PUMH18,115 reaches end-of-life status, inventory constraints occur, or alternative sourcing is required while maintaining electrical and mechanical compatibility within the specified parameter ranges.

Substiute Parts

PUMH18,115

Nexperia USA Inc.In Stock: 3473PUMH18,115 Datasheet

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UMH10NTN

Rohm SemiconductorIn Stock: 20869UMH10NTN Datasheet

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UMH11NTN

Rohm SemiconductorIn Stock: 44170UMH11NTN Datasheet

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UMH2NTN

Rohm SemiconductorIn Stock: 187200UMH2NTN Datasheet

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UMH3NTN

Rohm SemiconductorIn Stock: 44248UMH3NTN Datasheet

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UMH9NTN

Rohm SemiconductorIn Stock: 305117UMH9NTN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the PUMH18,115 is determined by strict electrical and mechanical compatibility criteria. All substitute parts must meet the following requirements:

Mandatory Compatibility Parameters:

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Maximum Collector Current (Ic): 100mA minimum
• Maximum Collector-Emitter Breakdown Voltage (Vce): 50V minimum
• Package / Case: 6-TSSOP, SC-88, SOT-363 (surface mount)
• Mounting Type: Surface Mount
• RoHS Status: ROHS3 Compliant

Biasing Resistor Configuration: The internal base (R1) and emitter-base (R2) resistor values determine the switching characteristics and bias point of the pre-biased transistor. Substitutes with different R1 and R2 values produce different DC current gain (hFE) and saturation voltage characteristics. Selection depends on the specific application circuit requirements.

Performance Characteristics: While maximum power dissipation differs between the main part (300mW) and substitute parts (150mW), all substitute parts operate within the same voltage and current envelope. Transition frequency specifications are provided for substitute parts but not for the main part.

Parameter Comparison

Engineering Selection Recommendations

All listed substitute parts are active products with ROHS3 compliance and unlimited moisture sensitivity rating (MSL 1), ensuring compatibility with standard manufacturing and storage conditions.

Selection by Biasing Resistor Configuration:

UMH3NTN provides the closest electrical match to PUMH18,115 with identical base resistor (R1 = 4.7kOhms). This part is recommended for direct substitution in applications where the PUMH18,115 biasing network is already optimized in the circuit design.

UMH11NTN offers symmetric biasing (R1 = R2 = 10kOhms) and is suitable for applications requiring balanced bias conditions with lower DC current gain (hFE = 30 @ 5mA, 5V).

UMH9NTN provides moderate base resistance (R1 = 10kOhms) with higher emitter-base resistance (R2 = 47kOhms), producing DC current gain of 68 @ 5mA, 5V.

UMH10NTN features the lowest base resistance (R1 = 2.2kOhms) among substitutes, producing the highest DC current gain (hFE = 80 @ 10mA, 5V), suitable for applications requiring strong switching drive.

UMH2NTN provides the highest biasing resistances (R1 = R2 = 47kOhms), producing moderate DC current gain (hFE = 68 @ 5mA, 5V), and is available in the largest inventory quantity (187,140 pcs).

Power Dissipation Consideration: Substitute parts are rated at 150mW maximum power dissipation compared to the PUMH18,115 at 300mW. Applications operating at continuous power levels exceeding 150mW require thermal analysis to confirm substitute part suitability.

Automotive Grade: The PUMH18,115 carries automotive grade designation with AEC-Q100 qualification. Substitute parts from Rohm Semiconductor are active products with ROHS3 compliance but do not explicitly state automotive grade or AEC-Q100 qualification in the provided specifications. Applications requiring automotive qualification should confirm Rohm part qualification status through the manufacturer.

Frequently Asked Questions (FAQ)

Q: Can UMH3NTN directly replace PUMH18,115 without circuit modification?

A: UMH3NTN shares the same base resistor value (R1 = 4.7kOhms) as PUMH18,115. However, the emitter-base resistor (R2) is not specified for UMH3NTN in the provided data, and saturation voltage characteristics differ (300mV vs. 100mV). Circuit validation is required to confirm functional equivalence in the specific application.

Q: What is the impact of different biasing resistor values on circuit performance?

A: The internal R1 and R2 resistor values determine the DC current gain (hFE) and switching speed of the pre-biased transistor. Lower R1 values increase base current and hFE, while higher R2 values reduce leakage current. Selection depends on the application's switching frequency, drive current availability, and desired saturation characteristics.

Q: Are all substitute parts suitable for automotive applications?

A: The PUMH18,115 is explicitly rated as automotive grade with AEC-Q100 qualification. The Rohm substitute parts (UMH10NTN, UMH11NTN, UMH2NTN, UMH3NTN, UMH9NTN) are active products with ROHS3 compliance. Automotive qualification status for Rohm parts must be confirmed through the manufacturer for applications requiring AEC-Q100 compliance.

Q: What is the significance of the 150mW vs. 300mW power rating difference?

A: The PUMH18,115 is rated for 300mW maximum power dissipation, while all Rohm substitutes are rated at 150mW. This difference reflects the thermal design of each package variant. Applications operating at continuous power levels between 150mW and 300mW require thermal analysis to confirm the substitute part can dissipate the required power without exceeding junction temperature limits.

Q: Do all substitute parts use the same package footprint?

A: All parts listed use the 6-TSSOP, SC-88, SOT-363 package family with surface mount configuration. Physical footprints are identical, allowing direct PCB layout compatibility. However, supplier device package designations differ (PUMH18 uses 6-TSSOP; Rohm parts use UMT6), which may reflect internal manufacturing variations. Consult package datasheets to confirm exact pin-to-pad dimensions.

Q: Which substitute part has the highest inventory availability?

A: UMH2NTN has the highest inventory quantity at 187,140 pcs. UMH9NTN follows with 305,100 pcs. Inventory levels should be confirmed with the supplier at the time of procurement, as quantities change based on demand and production schedules.

Q: How do the DC current gain (hFE) specifications differ across substitute parts?

A: DC current gain varies significantly across substitutes: UMH3NTN (100 @ 1mA, 5V), UMH10NTN (80 @ 10mA, 5V), UMH2NTN and UMH9NTN (68 @ 5mA, 5V), and UMH11NTN (30 @ 5mA, 5V). The PUMH18,115 specifies 50 @ 10mA, 5V. Higher hFE values indicate stronger transistor gain and may affect circuit biasing. Application-specific circuit analysis is required to determine acceptable hFE ranges.

Q: What is the difference between Vce saturation specifications?

A: Vce saturation (the voltage drop across the transistor in fully saturated state) is specified at different base and collector current conditions across parts. PUMH18,115 specifies 100mV @ 500µA, 10mA, while Rohm substitutes specify 300mV at varying conditions. Lower saturation voltage reduces power dissipation in switching applications. Circuit design must account for these differences in logic level and power budget calculations.