PUMH11F Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMH11F is an active pre-biased dual NPN bipolar transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two NPN transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V maximum collector-emitter breakdown voltage and 100mA maximum collector current. The part is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1) and is currently in active production status with 10,517 pieces in stock.

Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence for pre-biased BJT applications. Substitutes enable design flexibility, supply chain alternatives, and performance optimization within the same application class.

Key Parameters

Parameter	PUMH11F Value	Unit
Transistor Type	2 NPN - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150 @ 500µA, 10mA	mV
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the PUMH11F are qualified based on the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor configuration: 2 NPN pre-biased dual or functionally equivalent configuration
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 10kOhms
Internal emitter-base resistor (R2): 10kOhms
Surface mount package compatibility: 6-TSSOP, SC-88, or SOT-363
RoHS3 compliance and MSL 1 rating

Acceptable Variations:

DC current gain (hFE) minimum values between 30 and 50 at specified test conditions
Vce saturation maximum values up to 300mV (PUMH11F specifies 150mV)
Current collector cutoff up to 500nA (PUMH11F specifies 1µA)
Power dissipation from 150mW to 300mW
Transition frequency up to 250MHz (PUMH11F does not specify)

Configuration Exceptions:

DCX114EU-7-F contains 1 NPN and 1 PNP configuration; functionally substitutable in applications requiring only the NPN transistor pair
RN4902,LF(CT contains 1 NPN and 1 PNP configuration; functionally substitutable in applications requiring only the NPN transistor pair

Parameter Comparison

Parameter	PUMH11F	UMH11NTN	DDC114EU-7-F	DCX114EU-7-F	RN4902,LF(CT
Manufacturer	Nexperia USA Inc.	Rohm Semiconductor	Diodes Incorporated	Diodes Incorporated	Toshiba Semiconductor and Storage
Transistor Type	2 NPN - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	2 NPN - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V	50 V
Resistor - Base (R1)	10 kOhms	10 kOhms	10 kOhms	10 kOhms	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms	10 kOhms	10 kOhms	10 kOhms	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	30 @ 5mA, 5V	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	150 mV @ 500µA, 10mA	300 mV @ 500µA, 10mA	300 mV @ 500µA, 10mA	300 mV @ 500µA, 10mA	300 mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1 µA	500 nA	500 nA	500 nA	500 nA
Frequency - Transition	—	250 MHz	250 MHz	250 MHz	200 MHz
Power - Max	300 mW	150 mW	200 mW	200 mW	200 mW
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP	UMT6	SOT-363	SOT-363	US6
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

Primary Substitute: UMH11NTN (Rohm Semiconductor)

The UMH11NTN is the closest functional equivalent to the PUMH11F. Both parts feature identical 2 NPN pre-biased dual transistor configuration with matching internal resistor values (10kOhms R1 and R2), maximum collector current (100mA), and collector-emitter breakdown voltage (50V). Both are ROHS3 compliant with MSL 1 rating and active product status. The UMH11NTN offers superior collector cutoff current specification (500nA versus 1µA) and higher transition frequency (250MHz). The primary trade-off is reduced maximum power dissipation (150mW versus 300mW), which is acceptable for applications not requiring the full 300mW power budget.

Secondary Substitutes: DDC114EU-7-F and DCX114EU-7-F (Diodes Incorporated)

Both Diodes Incorporated parts maintain the critical electrical specifications: 100mA maximum collector current, 50V breakdown voltage, and 10kOhms internal resistors. DDC114EU-7-F provides exact 2 NPN configuration matching. DCX114EU-7-F contains 1 NPN and 1 PNP configuration; this part is substitutable only in applications utilizing the NPN transistor pair exclusively. Both parts feature 250MHz transition frequency and 200mW power dissipation. Vce saturation is relaxed to 300mV maximum. Both are ROHS3 compliant with MSL 1 rating and active status.

Tertiary Substitute: RN4902,LF(CT (Toshiba Semiconductor and Storage)

The RN4902,LF(CT contains 1 NPN and 1 PNP pre-biased configuration; substitution is limited to applications requiring only the NPN transistor pair. This part meets the 100mA collector current, 50V breakdown voltage, and 10kOhms resistor specifications. DC current gain is higher (50 minimum at 10mA, 5V versus 30 at 5mA, 5V), and transition frequency is 200MHz. Power dissipation is 200mW. ROHS3 compliance and MSL 1 rating are confirmed. Product status is active.

Selection Criteria:

For direct pin-compatible replacement with identical 2 NPN configuration: select UMH11NTN or DDC114EU-7-F
For applications with reduced power dissipation requirements: UMH11NTN (150mW) is suitable
For applications requiring higher transition frequency: UMH11NTN or DDC114EU-7-F (250MHz)
For applications utilizing only NPN transistor functionality: DCX114EU-7-F or RN4902,LF(CT are acceptable
All substitutes maintain ROHS3 compliance, MSL 1 rating, and active product status

Frequently Asked Questions (FAQ)

Q: Can UMH11NTN replace PUMH11F in all applications?

A: UMH11NTN is functionally equivalent for applications where maximum power dissipation does not exceed 150mW. The UMH11NTN provides superior electrical performance in collector cutoff current (500nA versus 1µA) and transition frequency (250MHz). All other critical parameters—collector current, breakdown voltage, internal resistor values, and biasing characteristics—are identical. Both parts use compatible surface mount packages within the 6-TSSOP/SOT-363 family.

Q: What is the difference between DDC114EU-7-F and DCX114EU-7-F?

A: DDC114EU-7-F contains 2 NPN pre-biased transistors, providing exact configuration matching to PUMH11F. DCX114EU-7-F contains 1 NPN and 1 PNP pre-biased transistor pair. Both parts share identical electrical specifications for the NPN transistor elements: 100mA collector current, 50V breakdown voltage, 10kOhms internal resistors, and 250MHz transition frequency. DCX114EU-7-F is substitutable only in applications that do not require the second NPN transistor.

Q: Are there package compatibility concerns when substituting these parts?

A: All listed substitutes are compatible within the 6-TSSOP, SC-88, and SOT-363 package family. However, supplier device packages vary: PUMH11F uses 6-TSSOP, UMH11NTN uses UMT6, DDC114EU-7-F and DCX114EU-7-F use SOT-363, and RN4902,LF(CT uses US6. These are functionally equivalent surface mount packages with identical pin configurations and land patterns. PCB layout and reflow profiles remain unchanged.

Q: What are the key electrical differences between PUMH11F and its substitutes?

A: The primary electrical difference is Vce saturation: PUMH11F specifies 150mV maximum at 500µA base current and 10mA collector current, while all substitutes specify 300mV maximum. This relaxation is acceptable in switching applications where saturation voltage is not a critical design parameter. Collector cutoff current is tighter in substitutes (500nA versus 1µA). DC current gain and internal resistor values are identical or superior in substitutes. Power dissipation ranges from 150mW to 300mW across the family.

Q: Is RN4902,LF(CT suitable as a direct replacement?

A: RN4902,LF(CT is suitable only if the application uses only the NPN transistor pair and does not require the second NPN transistor. The part contains 1 NPN and 1 PNP configuration rather than 2 NPN. All NPN electrical specifications match or exceed PUMH11F requirements. If the design requires two independent NPN transistors, DDC114EU-7-F or UMH11NTN must be selected instead.

Q: Do all substitutes maintain the same compliance and reliability ratings?

A: Yes. All listed substitutes are ROHS3 compliant and carry MSL 1 (unlimited moisture sensitivity level) rating, matching PUMH11F specifications. All parts are in active production status with confirmed inventory availability. REACH status is unaffected for all parts. ECCN classification is EAR99 for all substitutes.

Q: What is the inventory status of substitute parts?

A: UMH11NTN has the highest inventory availability at 44,100 pieces. DCX114EU-7-F has 35,300 pieces in stock. DDC114EU-7-F has 10,100 pieces. RN4902,LF(CT has 3,312 pieces available. PUMH11F has 10,517 pieces in stock. All parts are available as new original components.

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