PUMD48/ZLZ Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMD48/ZLZ is a pre-biased dual bipolar transistor (1 NPN, 1 PNP configuration) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates internal biasing resistors to simplify circuit design in switching and logic applications. The part is currently classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility with existing designs.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	47kΩ, 2.2kΩ	—
Emitter-Base Resistor (R2)	47kΩ	—
DC Current Gain (hFE Min)	80 @ 5mA, 5V / 100 @ 10mA, 5V	—
Vce Saturation (Max)	150mV @ 500µA, 10mA	—
Collector Cutoff Current (Max)	1	µA
Transition Frequency	230MHz, 180MHz	—
Maximum Power Dissipation	300	mW
Package Type	6-TSSOP / SC-88 / SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMD48/ZLZ is determined by the following critical parameters:

Configuration Match: The transistor type (1 NPN, 1 PNP dual configuration) is the primary substitution criterion. Parts with different configurations (such as 2 NPN only) represent functional alternatives rather than direct substitutes and require circuit re-evaluation.

Electrical Ratings: Maximum collector current (100mA), collector-emitter breakdown voltage (50V), and power dissipation (300mW minimum) establish the operational envelope. Substitutes must meet or exceed these ratings.

Internal Biasing Resistors: The base resistor values (47kΩ, 2.2kΩ) and emitter-base resistor (47kΩ) are integral to the pre-biased design. Substitutes with identical resistor configurations ensure drop-in compatibility without circuit modification.

Package Compatibility: The 6-TSSOP, SC-88, and SOT-363 packages are mechanically and electrically equivalent for PCB layout purposes.

Product Status: Active substitutes are preferred over obsolete parts to ensure long-term supply chain availability and manufacturing consistency.

Substitutes are grouped into two categories:

Direct Equivalents (1 NPN, 1 PNP configuration with matching resistor values)
Functional Alternatives (2 NPN configuration with similar electrical ratings; requires circuit validation)

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(br) V	R1 (Base) kΩ	R2 (E-B) kΩ	hFE Min @ Ic, Vce	Vce Sat (Max) mV	Icbo (Max)	Freq MHz	Power mW	Package	Status
PUMD48/ZLZ	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	47, 2.2	47	80 @ 5mA, 5V / 100 @ 10mA, 5V	150 @ 500µA, 10mA	1µA	230, 180	300	6-TSSOP	Obsolete
PUMD48,165	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	47, 2.2	47	80 @ 5mA, 5V / 100 @ 10mA, 5V	150 @ 500µA, 10mA / 100 @ 250µA, 5mA	1µA	—	300	6-TSSOP	Active
RN4905,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	500nA	250, 200	200	US6	Active
RN4985,LF(CT	Toshiba Semiconductor and Storage	1 NPN, 1 PNP	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	100µA	250, 200	200	US6	Active
DCX123JU-7-F	Diodes Incorporated	1 NPN, 1 PNP	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	500nA	250	200	SOT-363	Active
DDC123JU-7-F	Diodes Incorporated	2 NPN	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	500nA	250	200	SOT-363	Active
MUN5235DW1T1G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	500nA	—	250	SC-88/SOT-363	Active
NSVMUN5235DW1T1G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 1mA, 10mA	500nA	—	385	SC-88/SOT-363	Active
RN1905,LF(CT	Toshiba Semiconductor and Storage	2 NPN	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	500nA	250	200	US6	Active
SMUN5235DW1T3G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 1mA, 10mA	500nA	—	187	SC-88/SOT-363	Active

Engineering Selection Recommendations

Primary Substitute (Direct Equivalent)

PUMD48,165 is the recommended primary substitute. Manufactured by Nexperia USA Inc., this part maintains identical transistor configuration (1 NPN, 1 PNP), electrical ratings, and internal resistor values. The part is active in production status, ensuring supply chain continuity. Both ROHS3 compliance and MSL 1 rating match the original specification. The 6-TSSOP package provides direct PCB compatibility without layout modification.

Secondary Substitutes (1 NPN, 1 PNP Configuration)

RN4905,LF(CT and RN4985,LF(CT (Toshiba Semiconductor and Storage) maintain the 1 NPN, 1 PNP configuration with identical maximum ratings (100mA, 50V). Both parts are active and ROHS3 compliant. The US6 package is mechanically equivalent to 6-TSSOP/SOT-363. Note that RN4985,LF(CT specifies 100µA maximum collector cutoff current compared to 1µA in the original part; this represents a relaxed specification suitable for most applications.

DCX123JU-7-F (Diodes Incorporated) provides 1 NPN, 1 PNP configuration in SOT-363 package with active status and ROHS3 compliance. Power dissipation is reduced to 200mW; verify thermal requirements in the target application.

Functional Alternatives (2 NPN Configuration)

DDC123JU-7-F, MUN5235DW1T1G, NSVMUN5235DW1T1G, RN1905,LF(CT, and SMUN5235DW1T3G feature 2 NPN configuration instead of 1 NPN, 1 PNP. These parts are suitable only for applications requiring dual NPN transistors. All are active in production status with ROHS3 compliance. NSVMUN5235DW1T1G includes AEC-Q101 automotive qualification and higher power rating (385mW), appropriate for automotive applications. SMUN5235DW1T3G offers the lowest power dissipation (187mW) for power-constrained designs.

Frequently Asked Questions (FAQ)

Q: Can PUMD48,165 be used as a direct replacement for PUMD48/ZLZ?

A: Yes. PUMD48,165 is a direct equivalent manufactured by the same supplier (Nexperia USA Inc.) with identical transistor configuration, electrical ratings, internal resistor values, and package type. The primary difference is product status: PUMD48,165 is active while PUMD48/ZLZ is obsolete. No circuit modification is required.

Q: What is the difference between the 1 NPN, 1 PNP configuration and the 2 NPN configuration?

A: The PUMD48/ZLZ contains one NPN transistor and one PNP transistor on a single die with shared biasing resistors. Parts such as DDC123JU-7-F and MUN5235DW1T1G contain two NPN transistors instead. These are functionally different and suitable only for applications designed for dual NPN operation. Substitution requires circuit re-evaluation.

Q: Are the US6 and SOT-363 packages interchangeable?

A: US6 and SOT-363 are mechanically and electrically equivalent 6-pin surface mount packages. PCB footprints are compatible. Parts using either package designation can be substituted provided all electrical parameters match.

Q: Why does RN4985,LF(CT specify 100µA maximum collector cutoff current while the original part specifies 1µA?

A: RN4985,LF(CT uses a relaxed specification for collector cutoff current (Icbo). This represents a higher leakage current but remains acceptable for most switching and logic applications. Verify leakage requirements in designs sensitive to standby current consumption.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The internal base resistor (R1) and emitter-base resistor (R2) establish the pre-biased switching characteristics. Substitutes with identical resistor values (47kΩ and 2.2kΩ for R1; 47kΩ for R2) provide equivalent switching performance without circuit modification. Variations in these values alter switching speed and bias point.

Q: Is NSVMUN5235DW1T1G suitable for non-automotive applications?

A: NSVMUN5235DW1T1G is qualified to AEC-Q101 automotive standards and features enhanced power rating (385mW). It is suitable for any application requiring these specifications. However, it is a 2 NPN configuration, not 1 NPN, 1 PNP, and requires circuit compatibility verification.

Q: What is the impact of reduced power dissipation in SMUN5235DW1T3G (187mW vs. 300mW)?

A: Lower power dissipation rating indicates reduced thermal capability. SMUN5235DW1T3G is suitable for applications with lower power requirements or thermal constraints. Verify that the target application does not exceed 187mW continuous dissipation. This part features 2 NPN configuration and requires circuit compatibility assessment.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the original PUMD48/ZLZ specification.

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