PUMD2/ZLH Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMD2/ZLH is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates internal base resistors (22kΩ each) for simplified circuit design in switching and logic applications. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	22	kΩ
Emitter-Base Resistor (R2)	22	kΩ
DC Current Gain (hFE Min)	60	@ 5mA, 5V
Vce Saturation (Max)	150	mV @ 500µA, 10mA
Maximum Power Dissipation	300	mW
Transition Frequency	230, 180	MHz
Package Type	6-TSSOP / SC-88 / SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMD2/ZLH is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Transistor configuration: 1 NPN, 1 PNP pre-biased dual arrangement
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Internal base resistors: 22kΩ (R1 and R2)
Package compatibility: 6-TSSOP, SC-88, or SOT-363 surface mount
RoHS3 compliance and MSL 1 rating

Secondary Compatibility Parameters:

DC current gain (hFE) minimum: 60 or greater
Vce saturation: 150mV or lower (preferred)
Power dissipation: 250mW or greater
Transition frequency: 180MHz or greater (preferred)

Substitutes are grouped into two categories:

Category A - Direct Nexperia Equivalents: PUMD2,125 is an active variant of the base product with identical electrical specifications and packaging, differing only in product status (active vs. obsolete) and current availability.

Category B - Cross-Manufacturer Alternatives: DCX124EU-7-F, DCX124EUQ-7-F (Diodes Incorporated), MUN5212DW1T1G, NSVMUN5212DW1T1G (onsemi), and RN1903,LF(CT (Toshiba) provide functional equivalence with minor parameter variations. These parts maintain the 1 NPN, 1 PNP configuration, 50V rating, 100mA current capability, and 22kΩ internal resistors.

Category C - Partial Compatibility: DDC124EU-7-F features a 2 NPN configuration instead of 1 NPN, 1 PNP and is suitable only for applications requiring dual NPN functionality without PNP capability.

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(br) V	R1/R2 kΩ	hFE Min	Vce Sat (Max) mV	Power mW	Freq MHz	Package	Status
PUMD2/ZLH	Nexperia	1 NPN, 1 PNP	100	50	22/22	60	150	300	230, 180	6-TSSOP	Obsolete
PUMD2,125	Nexperia	1 NPN, 1 PNP	100	50	22/22	60	150	300	—	6-TSSOP	Active
DCX124EU-7-F	Diodes Inc.	1 NPN, 1 PNP	100	50	22/22	56	300	200	250	SOT-363	Active
DCX124EUQ-7-F	Diodes Inc.	1 NPN, 1 PNP	100	50	22/22	100	—	200	250	SOT-363	Active
DDC124EU-7-F	Diodes Inc.	2 NPN	100	50	22/22	56	300	200	250	SOT-363	Active
MUN5212DW1T1G	onsemi	2 NPN	100	50	22/22	60	250	250	—	SC-88/SOT-363	Active
NSVMUN5212DW1T1G	onsemi	2 NPN	100	50	22/22	60	250	250	—	SC-88/SOT-363	Active
RN1903,LF(CT	Toshiba	2 NPN	100	50	22/22	70	300	200	250	US6	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent: PUMD2,125 (Nexperia USA Inc.) is the preferred substitute. This part maintains identical electrical specifications, internal resistor values, and package configuration as the PUMD2/ZLH. The primary distinction is active product status with current manufacturing availability. Both parts carry ROHS3 compliance and MSL 1 rating. Selection of PUMD2,125 eliminates any circuit redesign requirements.

Secondary Recommendations - Cross-Manufacturer Alternatives:

DCX124EU-7-F and DCX124EUQ-7-F (Diodes Incorporated) provide full functional equivalence with 1 NPN, 1 PNP configuration. Both maintain 50V rating, 100mA current capability, and 22kΩ internal resistors. DCX124EUQ-7-F carries AEC-Q101 automotive qualification, matching the PUMD2/ZLH grade specification. Power dissipation is reduced to 200mW (vs. 300mW), which is acceptable for most applications within the original design envelope. Transition frequency increases to 250MHz, providing improved switching performance.

MUN5212DW1T1G and NSVMUN5212DW1T1G (onsemi) are functionally compatible with the exception of transistor configuration: both feature 2 NPN instead of 1 NPN, 1 PNP. These substitutes are suitable only for applications requiring dual NPN functionality. Power dissipation is 250mW, and both maintain 50V/100mA ratings with 22kΩ internal resistors.

RN1903,LF(CT (Toshiba Semiconductor and Storage) similarly features 2 NPN configuration with 50V/100mA ratings and 22kΩ resistors. This part is supplied in US6 package (alternative to SOT-363) and includes 250MHz transition frequency specification.

Not Recommended for Direct Substitution: DDC124EU-7-F is a 2 NPN device and does not provide PNP functionality. Selection requires circuit redesign and is appropriate only for applications with no PNP requirement.

Frequently Asked Questions (FAQ)

Q: Can PUMD2,125 be used as a direct replacement for PUMD2/ZLH?

A: Yes. PUMD2,125 is an active equivalent with identical electrical specifications, internal resistor values (22kΩ), and 6-TSSOP package configuration. No circuit modifications are required. The primary difference is product status: PUMD2/ZLH is obsolete while PUMD2,125 is in active production.

Q: What is the key difference between DCX124EU-7-F and DCX124EUQ-7-F?

A: Both parts are electrically equivalent with 1 NPN, 1 PNP configuration, 50V rating, and 100mA current capability. DCX124EUQ-7-F includes AEC-Q101 automotive qualification, matching the PUMD2/ZLH grade specification. DCX124EU-7-F does not carry automotive qualification. Selection depends on application requirements.

Q: Why are MUN5212DW1T1G and RN1903,LF(CT listed as substitutes if they have 2 NPN instead of 1 NPN, 1 PNP?

A: These parts are listed as functional alternatives for applications requiring only NPN transistor functionality. They maintain the critical electrical parameters: 50V rating, 100mA current capability, 22kΩ internal resistors, and surface mount packaging. Circuit redesign is necessary if PNP functionality is required.

Q: Is package compatibility maintained across all substitutes?

A: The PUMD2/ZLH is specified for 6-TSSOP, SC-88, and SOT-363 packages. Most substitutes use SOT-363 or SC-88 variants, which are mechanically compatible. RN1903,LF(CT uses US6 package, which differs in pinout and physical dimensions. Verify PCB footprint compatibility before selection.

Q: What is the impact of reduced power dissipation in DCX124EU-7-F (200mW vs. 300mW)?

A: The PUMD2/ZLH is rated for 300mW maximum power dissipation. DCX124EU-7-F is rated for 200mW. This reduction is acceptable for most applications operating within the original design envelope. Verify that actual power dissipation in the application does not exceed 200mW before selection.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitutes carry ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the PUMD2/ZLH specifications.

Q: Can transition frequency differences affect circuit performance?

A: The PUMD2/ZLH specifies 230MHz and 180MHz transition frequency. Substitutes DCX124EU-7-F, DCX124EUQ-7-F, and RN1903,LF(CT specify 250MHz, providing improved high-frequency performance. MUN5212DW1T1G and NSVMUN5212DW1T1G do not specify transition frequency. For applications sensitive to switching speed, verify that the selected substitute meets performance requirements.

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