PUMD2,165 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMD2,165 is an active pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates internal base resistors for simplified circuit design and reduced component count in switching and logic applications. The part is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1) and is currently in active production status. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence for direct board-level replacement.

Substiute Parts

PUMD2,165
Nexperia USA Inc.In Stock: 11092PUMD2,165 Datasheet
PUMD2,165
Current Part
DCX124EU-7-F
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DCX124EU-7-F
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DCX124EUQ-7-F
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MUN5212DW1T1G
onsemiIn Stock: 96926MUN5212DW1T1G Datasheet
MUN5212DW1T1G
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MUN5312DW1T1G
onsemiIn Stock: 251429MUN5312DW1T1G Datasheet
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MUN5312DW1T2G
onsemiIn Stock: 111509MUN5312DW1T2G Datasheet
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NSVMUN5212DW1T1G
onsemiIn Stock: 35145NSVMUN5212DW1T1G Datasheet
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Key Parameters

Parameter Value Unit
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
Power - Max 300 mW
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the PUMD2,165 is determined by the following critical parameters:

Primary Matching Criteria:

  • Transistor configuration: 1 NPN, 1 PNP pre-biased dual topology
  • Maximum collector current: 100 mA
  • Collector-emitter breakdown voltage: 50 V
  • Internal base resistor values: 22 kOhms (R1 and R2)
  • Surface mount package compatibility: 6-TSSOP / SOT-363 / SC-88
  • RoHS3 compliance and MSL 1 rating

Secondary Compatibility Factors:

  • Power dissipation rating (minimum 300 mW required for direct substitution)
  • DC current gain (hFE) minimum specifications
  • Saturation voltage characteristics
  • Collector cutoff current specifications

Parts are grouped into two categories based on transistor configuration match:

Group A - Exact Configuration Match (1 NPN, 1 PNP): DCX124EU-7-F, DCX124EUQ-7-F, MUN5312DW1T1G, MUN5312DW1T2G

Group B - Configuration Variant (2 NPN only): MUN5212DW1T1G, NSVMUN5212DW1T1G

Group A parts provide direct functional equivalence. Group B parts contain dual NPN configuration and are suitable only for applications requiring NPN functionality without PNP requirements.

Parameter Comparison

Parameter PUMD2,165 DCX124EU-7-F DCX124EUQ-7-F MUN5312DW1T1G MUN5312DW1T2G MUN5212DW1T1G NSVMUN5212DW1T1G
Manufacturer Nexperia USA Inc. Diodes Incorporated Diodes Incorporated onsemi onsemi onsemi onsemi
Transistor Type 1 NPN, 1 PNP 1 NPN, 1 PNP 1 NPN, 1 PNP 1 NPN, 1 PNP 1 NPN, 1 PNP 2 NPN 2 NPN
Ic (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Vce Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
R1 (Base Resistor) 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms
R2 (Emitter Base Resistor) 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms 22 kOhms
Power - Max 300 mW 200 mW 200 mW 250 mW 385 mW 250 mW 250 mW
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL Rating 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
Frequency - Transition 250 MHz 250 MHz
Automotive Grade AEC-Q101

Engineering Selection Recommendations

Direct Substitutes (1 NPN, 1 PNP Configuration):

MUN5312DW1T2G (onsemi) is the primary recommended substitute. This part matches the PUMD2,165 in transistor configuration, electrical specifications, and package format. The MUN5312DW1T2G provides 385 mW maximum power dissipation, exceeding the PUMD2,165 specification of 300 mW, offering improved thermal margin. Both parts are ROHS3 compliant with MSL 1 rating. Inventory availability is 111,400 units.

MUN5312DW1T1G (onsemi) is functionally equivalent with 250 mW power rating. This part meets all electrical requirements and package specifications. Inventory availability is 251,400 units, providing superior supply continuity.

DCX124EU-7-F (Diodes Incorporated) provides equivalent functionality with 200 mW power rating and 250 MHz transition frequency specification. This part is suitable for applications where the lower power rating is acceptable. Inventory availability is 18,200 units.

DCX124EUQ-7-F (Diodes Incorporated) is an automotive-grade variant (AEC-Q101 qualified) with 200 mW power rating and 250 MHz transition frequency. This part is required for automotive applications. Inventory availability is 7,680 units.

Alternative Configuration (2 NPN Only):

MUN5212DW1T1G (onsemi) and NSVMUN5212DW1T1G (onsemi) contain dual NPN configuration instead of NPN/PNP. These parts are suitable only for applications requiring NPN functionality without PNP requirements. Both parts meet the 50 V, 100 mA, and 22 kOhms resistor specifications. Inventory availability is 96,900 units (MUN5212DW1T1G) and 35,100 units (NSVMUN5212DW1T1G).

Compliance Status:

All substitute parts maintain ROHS3 compliance and MSL 1 (unlimited) moisture sensitivity rating, matching the PUMD2,165 environmental specifications. The DCX124EUQ-7-F variant includes AEC-Q101 automotive qualification for applications requiring automotive-grade components.

Frequently Asked Questions (FAQ)

Q: Can DCX124EU-7-F replace PUMD2,165 in all applications?

A: DCX124EU-7-F is electrically equivalent with matching transistor configuration (1 NPN, 1 PNP), collector current (100 mA), breakdown voltage (50 V), and base resistor values (22 kOhms). The primary difference is maximum power dissipation: DCX124EU-7-F is rated 200 mW versus PUMD2,165 at 300 mW. For applications operating below 200 mW, direct substitution is valid. For applications requiring the full 300 mW thermal margin, MUN5312DW1T2G (385 mW) is recommended.

Q: What is the difference between MUN5312DW1T1G and MUN5312DW1T2G?

A: Both parts are manufactured by onsemi with identical transistor configuration (1 NPN, 1 PNP), electrical specifications, and package format. The primary difference is maximum power dissipation: MUN5312DW1T1G is rated 250 mW, while MUN5312DW1T2G is rated 385 mW. Selection depends on thermal requirements of the application. MUN5312DW1T2G provides greater power margin and is preferred for high-dissipation circuits.

Q: Why are MUN5212DW1T1G and NSVMUN5212DW1T1G listed as alternatives if they have different transistor configuration?

A: These parts contain dual NPN configuration (2 NPN) instead of the PUMD2,165 configuration (1 NPN, 1 PNP). They are listed as alternatives only for applications requiring NPN functionality without PNP requirements. They match all other critical parameters: 100 mA collector current, 50 V breakdown voltage, 22 kOhms base resistors, and SOT-363 package. Applications requiring both NPN and PNP functionality must use Group A substitutes.

Q: Is DCX124EUQ-7-F suitable for non-automotive applications?

A: Yes. DCX124EUQ-7-F is AEC-Q101 automotive-qualified but is functionally suitable for general industrial and consumer applications. The automotive qualification represents an additional quality assurance level and does not restrict use in non-automotive designs. This part is recommended when automotive-grade reliability is required or preferred.

Q: What is the significance of the 250 MHz transition frequency listed for DCX124 parts?

A: The 250 MHz transition frequency specification indicates the frequency at which the transistor current gain drops to unity. This parameter is provided for DCX124EU-7-F and DCX124EUQ-7-F but is not specified for the PUMD2,165 or onsemi MUN series parts. For low-frequency switching applications (below 10 MHz), this difference is not significant. For high-frequency applications approaching or exceeding 100 MHz, the DCX124 variants provide documented frequency performance.

Q: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in 6-TSSOP, SC-88, and SOT-363 package designations, which are mechanically and electrically equivalent. Supplier device packages may vary: Nexperia and Diodes specify 6-TSSOP or SOT-363, while onsemi specifies SC-88/SC70-6/SOT-363. These designations refer to the same physical package with identical pin configurations and board-level compatibility.

Q: What is the inventory status for each substitute part?

A: Current inventory levels are: MUN5312DW1T1G (251,400 units), MUN5212DW1T1G (96,900 units), MUN5312DW1T2G (111,400 units), DCX124EU-7-F (18,200 units), NSVMUN5212DW1T1G (35,100 units), and DCX124EUQ-7-F (7,680 units). For long-term supply assurance, MUN5312DW1T1G offers the highest inventory availability.

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