PUMD10/ZLF Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMD10/ZLF is a pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates internal base resistors (R1: 2.2kΩ, R2: 47kΩ) to simplify circuit design and reduce component count in switching and logic applications. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain electrical and mechanical compatibility.

Key Parameters

Parameter	Value	Unit
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	2.2	kΩ
Resistor - Emitter Base (R2)	47	kΩ
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA	—
Current - Collector Cutoff (Max)	100	nA
Frequency - Transition	230, 180	MHz
Power - Max	300	mW
Package / Case	6-TSSOP, SC-88, SOT-363	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMD10/ZLF is determined by the following critical parameters:

Electrical Compatibility Criteria:

Transistor configuration (1 NPN, 1 PNP dual vs. 2 NPN dual)
Maximum collector current (100mA minimum)
Collector-emitter breakdown voltage (50V minimum)
Internal base resistor values (R1: 2.2kΩ, R2: 47kΩ)
DC current gain (hFE) performance at specified operating points
Saturation voltage characteristics

Mechanical Compatibility Criteria:

Surface mount package compatibility (6-TSSOP, SC-88, SOT-363)
Pin configuration and footprint equivalence

Compliance Criteria:

RoHS3 compliance
MSL rating (1 - Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (1 NPN, 1 PNP Configuration):

PUMD10,135 (Nexperia USA Inc.) - Active status, identical transistor configuration

Category B - Functional Equivalents (2 NPN Configuration):

DCX123JU-7-F (Diodes Incorporated)
DDC123JU-7-F (Diodes Incorporated)
MUN5235DW1T1G (onsemi)
NSVMUN5235DW1T1G (onsemi - Automotive grade)
RN1905,LF(CT (Toshiba Semiconductor and Storage)
SMUN5235DW1T3G (onsemi)

Category B parts feature a 2 NPN configuration instead of 1 NPN, 1 PNP. These are suitable for applications requiring dual NPN switching functionality with identical electrical parameters (Ic, Vce, resistor values, and saturation characteristics).

Parameter Comparison

Part Number	Manufacturer	Transistor Type	Ic (Max) mA	Vce(BR) V	R1 kΩ	R2 kΩ	hFE Min @ Ic, Vce	Vce Sat (Max) mV	Power (Max) mW	Package	Status
PUMD10/ZLF	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	2.2	47	100 @ 10mA, 5V	100 @ 250µA, 5mA	300	6-TSSOP	Obsolete
PUMD10,135	Nexperia USA Inc.	1 NPN, 1 PNP	100	50	2.2	47	100 @ 10mA, 5V	100 @ 250µA, 5mA	300	6-TSSOP	Active
DCX123JU-7-F	Diodes Incorporated	1 NPN, 1 PNP	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	SOT-363	Active
DDC123JU-7-F	Diodes Incorporated	2 NPN	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	SOT-363	Active
MUN5235DW1T1G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	Active
NSVMUN5235DW1T1G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 1mA, 10mA	385	SC-88/SOT-363	Active
RN1905,LF(CT	Toshiba Semiconductor and Storage	2 NPN	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	US6	Active
SMUN5235DW1T3G	onsemi	2 NPN	100	50	2.2	47	80 @ 5mA, 10V	250 @ 1mA, 10mA	187	SC-88/SOT-363	Active

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent:

PUMD10,135 (Nexperia USA Inc.) is the direct active equivalent to PUMD10/ZLF. This part maintains identical electrical specifications, transistor configuration (1 NPN, 1 PNP), and package format. The part is currently in active production status with ROHS3 compliance and MSL 1 rating. Inventory availability is confirmed at 920 pieces.

Secondary Recommendations - Functional Equivalents:

For applications requiring dual NPN switching functionality, the following active parts provide electrical compatibility with the PUMD10/ZLF base specifications:

DCX123JU-7-F (Diodes Incorporated): Maintains 1 NPN, 1 PNP configuration with identical resistor values and collector current rating. Offers 250MHz transition frequency and 200mW power rating. High inventory availability (188,100 pieces).
MUN5235DW1T1G (onsemi): 2 NPN configuration with matching resistor values and 100mA collector current. Provides 250mW power dissipation and active production status. Suitable for dual NPN switching applications.
NSVMUN5235DW1T1G (onsemi): Automotive-grade variant (AEC-Q101 qualified) with 2 NPN configuration. Offers enhanced power rating (385mW) and automotive reliability certification. Appropriate for automotive and harsh environment applications.
RN1905,LF(CT (Toshiba Semiconductor and Storage): 2 NPN configuration with 250MHz transition frequency and 200mW power rating. Tape & Reel packaging with ROHS3 compliance. High inventory availability (5,568 pieces).
SMUN5235DW1T3G (onsemi): 2 NPN configuration with reduced power rating (187mW) suitable for lower-power applications. Maintains identical resistor values and collector current specifications.

All recommended substitutes are RoHS3 compliant with MSL 1 rating, ensuring compatibility with standard manufacturing processes and storage requirements.

Frequently Asked Questions (FAQ)

Q1: Can PUMD10,135 be used as a direct replacement for PUMD10/ZLF?

A: Yes. PUMD10,135 is the active equivalent part with identical electrical specifications, transistor configuration (1 NPN, 1 PNP), internal resistor values (R1: 2.2kΩ, R2: 47kΩ), and 6-TSSOP package format. The primary difference is product status (Active vs. Obsolete).

Q2: What is the difference between 1 NPN, 1 PNP and 2 NPN configurations?

A: The PUMD10/ZLF contains one NPN transistor and one PNP transistor in a single package. Parts like DDC123JU-7-F and MUN5235DW1T1G contain two NPN transistors. The configuration affects circuit design and application suitability. 1 NPN, 1 PNP parts are suitable for complementary switching pairs, while 2 NPN parts are designed for dual NPN switching applications.

Q3: Are all substitute parts compatible with the same PCB footprint?

A: Most substitutes use 6-TSSOP, SC-88, or SOT-363 packages, which share compatible footprints. However, RN1905,LF(CT uses a US6 package. Verify footprint compatibility with your PCB design before substitution. Consult package datasheets for pin-to-pin correspondence.

Q4: What does RoHS3 compliance mean for component selection?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead and other hazardous materials. All recommended substitutes are RoHS3 compliant, ensuring compatibility with modern manufacturing standards and environmental regulations.

Q5: How do transition frequency differences affect substitution?

A: The PUMD10/ZLF specifies 230MHz and 180MHz transition frequencies. Substitutes DCX123JU-7-F and RN1905,LF(CT specify 250MHz, which exceeds the original specification. Parts without specified transition frequency (MUN5235DW1T1G, NSVMUN5235DW1T1G, SMUN5235DW1T3G) are suitable for applications where transition frequency is not a critical design parameter. Verify frequency requirements for your specific application.

Q6: What is the significance of MSL 1 (Unlimited) rating?

A: MSL 1 indicates the component has unlimited shelf life and does not require special moisture control during storage or handling. All recommended substitutes carry MSL 1 rating, eliminating moisture sensitivity concerns during manufacturing and assembly.

Q7: Why is NSVMUN5235DW1T1G recommended for automotive applications?

A: NSVMUN5235DW1T1G carries AEC-Q101 automotive qualification, indicating compliance with automotive industry reliability and performance standards. This part is suitable for automotive and harsh environment applications requiring enhanced reliability certification.

Q8: How do power dissipation ratings differ among substitutes?

A: The PUMD10/ZLF specifies 300mW maximum power. Substitutes range from 187mW (SMUN5235DW1T3G) to 385mW (NSVMUN5235DW1T1G). Select parts based on your circuit's power dissipation requirements. Lower-power parts (187-200mW) are suitable for low-power switching applications, while higher-power parts (250-385mW) accommodate higher current or duty cycle applications.

Q9: What does "pre-biased" mean in the context of these transistors?

A: Pre-biased transistors integrate internal base resistors (R1 and R2) within the package. These resistors establish bias conditions without requiring external components. The PUMD10/ZLF and all substitutes feature R1: 2.2kΩ and R2: 47kΩ, simplifying circuit design and reducing component count.

Q10: Are there inventory considerations when selecting a substitute?

A: Yes. Inventory availability varies significantly among substitutes. PUMD10,135 has 920 pieces available, while DCX123JU-7-F has 188,100 pieces. Consider lead time and supply chain stability when selecting substitutes, particularly for high-volume production.

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