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PUMD10,135 Pre-Biased Bipolar Transistor Equivalent & Substitute Parts
Part Overview
The PUMD10,135 is an active pre-biased dual bipolar transistor (1 NPN, 1 PNP) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates internal base resistors (R1: 2.2kΩ, R2: 47kΩ) for simplified circuit design and reduced component count in switching and logic applications. The part is RoHS3 compliant with unlimited moisture sensitivity rating (MSL 1) and is suitable for high-volume production environments. Equivalent and substitute parts are identified based on matching electrical specifications, package compatibility, and functional equivalence within the pre-biased BJT category.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | — |
| Maximum Collector Current (Ic) | 100 | mA |
| Collector-Emitter Breakdown Voltage (Max) | 50 | V |
| Base Resistor (R1) | 2.2 | kΩ |
| Emitter-Base Resistor (R2) | 47 | kΩ |
| DC Current Gain (hFE Min) | 100 | @ 10mA, 5V |
| Vce Saturation (Max) | 100 | mV @ 250µA, 5mA |
| Maximum Power Dissipation | 300 | mW |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — |
| Mounting Type | Surface Mount | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level | 1 (Unlimited) | — |
Substitute Part Grouping Explanation
Substitution of the PUMD10,135 is determined by the following critical parameters:
Electrical Equivalence Criteria:
- Transistor configuration: 1 NPN, 1 PNP pre-biased dual structure
- Maximum collector current: 100 mA
- Collector-emitter breakdown voltage: 50 V
- Internal base resistor (R1): 2.2 kΩ
- Internal emitter-base resistor (R2): 47 kΩ
- Surface mount package compatibility: 6-TSSOP, SC-88, SOT-363
Compliance & Environmental Criteria:
- RoHS3 compliance
- Moisture sensitivity level: 1 (Unlimited)
- Active product status
Substitute parts are grouped into two categories:
Category A - Direct Electrical Equivalents (1 NPN, 1 PNP Configuration): Parts with identical transistor configuration, matching internal resistor values, and equivalent electrical performance specifications. These parts are pin-compatible and functionally interchangeable.
Category B - Functional Alternatives (Different Transistor Configuration): Parts with 2 NPN configuration instead of 1 NPN/1 PNP. These are not pin-compatible and require circuit redesign. Included for reference only when application requirements permit configuration change.
Parameter Comparison
| Parameter | PUMD10,135 (Nexperia) | MUN5335DW1T2G (onsemi) | DCX123JUQ-7-F (Diodes) | RN4905,LF(CT (Toshiba) | RN4985,LF(CT (Toshiba) |
|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | onsemi | Diodes Incorporated | Toshiba Semiconductor | Toshiba Semiconductor |
| Transistor Type | 1 NPN, 1 PNP | 1 NPN, 1 PNP | 1 NPN, 1 PNP | 1 NPN, 1 PNP | 1 NPN, 1 PNP |
| Ic (Max) | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA |
| Vce Breakdown (Max) | 50 V | 50 V | 50 V | 50 V | 50 V |
| R1 (Base Resistor) | 2.2 kΩ | 2.2 kΩ | 2.2 kΩ | 2.2 kΩ | 2.2 kΩ |
| R2 (Emitter-Base Resistor) | 47 kΩ | 47 kΩ | 47 kΩ | 47 kΩ | 47 kΩ |
| hFE (Min) @ Ic, Vce | 100 @ 10mA, 5V | 80 @ 5mA, 10V | 80 @ 10mA, 5V | 80 @ 10mA, 5V | 80 @ 10mA, 5V |
| Vce Saturation (Max) | 100 mV @ 250µA, 5mA | 250 mV @ 300µA, 10mA | 300 mV @ 250µA, 5mA | 300 mV @ 250µA, 5mA | 300 mV @ 250µA, 5mA |
| Icbo (Max) | 1 µA | 500 nA | 500 nA | 500 nA | 100 µA |
| Power (Max) | 300 mW | 250 mW | 200 mW | 200 mW | 200 mW |
| Frequency - Transition | — | — | 250 MHz | 250 MHz, 200 MHz | 250 MHz, 200 MHz |
| Package | 6-TSSOP | SC-88/SC70-6/SOT-363 | SOT-363 | US6 | US6 |
| Packaging Type | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Primary Substitutes (Direct Equivalents):
The following parts are electrically and functionally equivalent to the PUMD10,135 and maintain identical transistor configuration (1 NPN, 1 PNP pre-biased dual):
MUN5335DW1T2G (onsemi) — Recommended for applications where power dissipation is 250 mW or less. Meets all electrical specifications with matching internal resistor values. RoHS3 compliant, MSL 1. Available in SC-88/SC70-6/SOT-363 package variants.
DCX123JUQ-7-F (Diodes Incorporated) — Suitable for applications requiring transition frequency specification (250 MHz). Power rating of 200 mW limits use to lower power applications. Automotive grade with AEC-Q101 qualification. RoHS3 compliant, MSL 1. SOT-363 package.
RN4905,LF(CT (Toshiba Semiconductor and Storage) — Functionally equivalent with transition frequency specification (250 MHz, 200 MHz). Power rating of 200 mW. RoHS3 compliant, MSL 1. US6 package format.
RN4985,LF(CT (Toshiba Semiconductor and Storage) — Functionally equivalent with transition frequency specification (250 MHz, 200 MHz). Power rating of 200 mW. Note: Icbo maximum of 100 µA differs from primary part specification. RoHS3 compliant, MSL 1. US6 package format.
Secondary Reference (Configuration Variant):
DDC123JU-7-F (Diodes Incorporated) — 2 NPN pre-biased dual configuration. Not pin-compatible with PUMD10,135. Included for reference when circuit redesign permits dual NPN topology. RoHS3 compliant, MSL 1.
Selection Criteria:
- Power Budget: If application requires 300 mW dissipation, PUMD10,135 is the only option. Substitute parts are limited to 200–250 mW.
- Package Footprint: Verify PCB layout compatibility with 6-TSSOP, SC-88, SOT-363, or US6 package formats.
- Frequency Requirements: If transition frequency specification is required, select DCX123JUQ-7-F, RN4905,LF(CT, or RN4985,LF(CT.
- Compliance: All listed parts are RoHS3 compliant with MSL 1 rating.
Frequently Asked Questions (FAQ)
Q: Can MUN5335DW1T2G replace PUMD10,135 in all applications?
A: MUN5335DW1T2G is electrically equivalent with matching transistor configuration and internal resistor values. However, maximum power dissipation is 250 mW versus 300 mW for PUMD10,135. Substitution is valid only if circuit power dissipation does not exceed 250 mW.
Q: What is the difference between 6-TSSOP, SC-88, and SOT-363 packages?
A: These are equivalent package designations for the same physical form factor. 6-TSSOP (Thin Shrink Small Outline Package), SC-88, and SOT-363 refer to the same 6-pin surface mount package. Pin compatibility is maintained across these designations.
Q: Are Toshiba RN4905 and RN4985 interchangeable?
A: Both parts are functionally equivalent with identical transistor configuration, current ratings, and voltage specifications. The primary difference is Icbo maximum: RN4905 specifies 500 nA while RN4985 specifies 100 µA. Selection depends on leakage current requirements for the specific application.
Q: Can DDC123JU-7-F be used as a substitute?
A: DDC123JU-7-F has a 2 NPN configuration instead of 1 NPN/1 PNP. It is not pin-compatible and requires circuit redesign. Use only if application topology permits dual NPN configuration.
Q: What does MSL 1 (Unlimited) mean for component handling?
A: MSL 1 indicates the component has unlimited shelf life and does not require special moisture control during storage or handling. No baking or desiccant storage is required before soldering.
Q: Why do substitute parts have lower power ratings?
A: MUN5335DW1T2G, DCX123JUQ-7-F, RN4905,LF(CT, and RN4985,LF(CT are optimized for lower power applications (200–250 mW) compared to PUMD10,135 (300 mW). This reflects different thermal design and die size. Applications requiring 300 mW dissipation must use PUMD10,135 or verify substitute part thermal performance in the specific circuit.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts are RoHS3 compliant and REACH unaffected, matching the compliance status of PUMD10,135.
Q: What is the significance of transition frequency (fT) specification?
A: Transition frequency indicates the frequency at which current gain drops to unity. DCX123JUQ-7-F, RN4905,LF(CT, and RN4985,LF(CT specify 250 MHz or 200 MHz, making them suitable for higher-frequency switching applications. PUMD10,135 does not specify transition frequency, indicating it is optimized for lower-frequency logic and switching circuits.
Q: Can I use parts with different Vce saturation specifications?
A: Vce saturation differences affect switching speed and power dissipation in saturated switching mode. PUMD10,135 specifies 100 mV maximum saturation, while substitutes specify 250–300 mV. In applications where saturation voltage is critical to circuit performance, verify that substitute part specifications meet design requirements.
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