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PUMB4,115 Equivalent & Substitute Parts
Part Overview
The PUMB4,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component is designed for applications requiring integrated base bias resistors, eliminating the need for external biasing networks. The part is Active status and carries AEC-Q100 automotive qualification with ROHS3 compliance. Substitute parts are necessary when addressing supply chain constraints, inventory availability, or specific application requirements that align with equivalent electrical and mechanical specifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | 2 PNP - Pre-Biased (Dual) | — |
| Current - Collector (Ic) (Max) | 100 | mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V |
| Resistor - Base (R1) | 10 | kOhms |
| Power - Max | 300 | mW |
| Mounting Type | Surface Mount | — |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — |
| RoHS Status | ROHS3 Compliant | — |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | — |
| Grade | Automotive | — |
| Qualification | AEC-Q100 | — |
Substitute Part Grouping Explanation
Substitution eligibility for the PUMB4,115 is determined by the following critical parameters:
Mandatory Matching Criteria:
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363 compatible
- RoHS Status: ROHS3 Compliant
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
Acceptable Variation Parameters:
- Power - Max: Equal to or greater than 300 mW
- DC Current Gain (hFE): Minimum specification may vary
- Vce Saturation: Specification may vary within application tolerance
- Current - Collector Cutoff: Specification may vary
- Frequency - Transition: May be specified or unspecified
Parts meeting all mandatory criteria are classified as direct substitutes. Parts with differing base resistor values (R1) or emitter-base resistor configurations (R2) are listed but require circuit evaluation before selection.
Parameter Comparison
| Parameter | PUMB4,115 | MUN5115DW1T1G | RN2911,LF | SMUN5115DW1T1G | UMB10NTN | UMB2NTN |
|---|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | onsemi | Toshiba Semiconductor and Storage | onsemi | Rohm Semiconductor | Rohm Semiconductor |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Resistor - Base (R1) | 10 kOhms | 10 kOhms | 10 kOhms | 10 kOhms | 2.2 kOhms | 47 kOhms |
| Resistor - Emitter Base (R2) | — | — | — | — | 47 kOhms | 47 kOhms |
| Power - Max | 300 mW | 250 mW | 200 mW | 187 mW | 150 mW | 150 mW |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Frequency - Transition | — | — | 200 MHz | — | 250 MHz | 250 MHz |
Engineering Selection Recommendations
Direct Substitutes (Identical Base Resistor Configuration):
MUN5115DW1T1G, SMUN5115DW1T1G, and RN2911,LF are direct substitutes for PUMB4,115. All three parts maintain the 10 kOhms base resistor specification and are compatible with existing circuit designs. MUN5115DW1T1G and SMUN5115DW1T1G are manufactured by onsemi with Active product status and ROHS3 compliance. RN2911,LF is manufactured by Toshiba Semiconductor and Storage with Active product status, ROHS3 compliance, and specified transition frequency of 200 MHz. Power dissipation ratings are lower than the PUMB4,115 (250 mW, 187 mW, and 200 mW respectively), requiring verification that application power requirements do not exceed these limits.
Conditional Substitutes (Differing Resistor Configuration):
UMB10NTN and UMB2NTN are manufactured by Rohm Semiconductor with Active product status and ROHS3 compliance. These parts feature different internal resistor configurations: UMB10NTN has R1 = 2.2 kOhms and R2 = 47 kOhms; UMB2NTN has R1 = 47 kOhms and R2 = 47 kOhms. These configurations alter the biasing characteristics and are not interchangeable without circuit redesign. Selection of these parts requires application-specific evaluation of bias network requirements.
Compliance and Availability:
All substitute parts carry ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the PUMB4,115 environmental specifications. All parts are Active status. Inventory availability varies: MUN5115DW1T1G (6100 pcs), RN2911,LF (4056 pcs), SMUN5115DW1T1G (2285 pcs), UMB10NTN (26400 pcs), and UMB2NTN (5950 pcs).
Frequently Asked Questions (FAQ)
Q: Can MUN5115DW1T1G replace PUMB4,115 in my circuit?
A: MUN5115DW1T1G is a direct substitute for PUMB4,115. Both parts have identical transistor type (2 PNP - Pre-Biased Dual), maximum collector current (100 mA), breakdown voltage (50 V), and base resistor value (10 kOhms). The primary difference is maximum power dissipation: MUN5115DW1T1G is rated at 250 mW compared to PUMB4,115 at 300 mW. Verify that your application power requirements do not exceed 250 mW.
Q: What is the difference between PUMB4,115 and UMB10NTN?
A: While both are dual PNP pre-biased transistors with 100 mA collector current and 50 V breakdown voltage, they differ in internal resistor configuration. PUMB4,115 has a 10 kOhms base resistor (R1) with no specified emitter-base resistor (R2). UMB10NTN has R1 = 2.2 kOhms and R2 = 47 kOhms. These different bias networks produce different circuit behavior and are not pin-compatible substitutes without circuit modification.
Q: Are all substitute parts available in the same package?
A: All substitute parts are available in 6-TSSOP, SC-88, and SOT-363 compatible packages. However, the supplier device package designation varies: PUMB4,115 uses 6-TSSOP; MUN5115DW1T1G and SMUN5115DW1T1G use SC-88/SC70-6/SOT-363; RN2911,LF uses US6; UMB10NTN and UMB2NTN use UMT6. Physical footprints are compatible across these designations for surface mount assembly.
Q: Which substitute part has the highest transition frequency?
A: UMB10NTN and UMB2NTN both specify 250 MHz transition frequency. RN2911,LF specifies 200 MHz. PUMB4,115, MUN5115DW1T1G, and SMUN5115DW1T1G do not specify transition frequency. Selection based on frequency performance requires application-specific high-frequency requirements.
Q: Can I use RN2911,LF as a substitute if my circuit requires lower power dissipation?
A: RN2911,LF is rated at 200 mW maximum power dissipation, which is lower than PUMB4,115 at 300 mW. This part is suitable only if your application power requirements are within the 200 mW limit. RN2911,LF maintains the 10 kOhms base resistor specification and is otherwise electrically compatible.
Q: What is the inventory status of substitute parts?
A: Current inventory levels are: UMB10NTN (26400 pcs), MUN5115DW1T1G (6100 pcs), UMB2NTN (5950 pcs), RN2911,LF (4056 pcs), and SMUN5115DW1T1G (2285 pcs). PUMB4,115 has 4300 pcs in stock. Inventory availability may change; verify current stock levels with your supplier.
Q: Are all substitute parts automotive qualified?
A: PUMB4,115 carries AEC-Q100 automotive qualification. Automotive qualification status for substitute parts is not specified in the provided data. If automotive qualification is required for your application, verify AEC-Q100 certification status with the respective manufacturers before selection.
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