PUMB18,115 Equivalent & Substitute Parts

Part Overview

The PUMB18,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component is designed for general-purpose switching and amplification applications requiring integrated base bias resistors. The part is active in production status with automotive-grade qualification (AEC-Q100) and full RoHS3 compliance.

Substitute parts are necessary when the primary part experiences supply constraints, extended lead times, or when design requirements permit operation within alternative electrical and mechanical specifications. All substitute parts listed maintain compatibility with the 6-TSSOP/SC-88/SOT-363 package family and preserve core functional characteristics.

Substiute Parts

PUMB18,115

Nexperia USA Inc.In Stock: 1074PUMB18,115 Datasheet

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MUN5133DW1T1G

onsemiIn Stock: 24400MUN5133DW1T1G Datasheet

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UMB10NTN

Rohm SemiconductorIn Stock: 26491UMB10NTN Datasheet

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UMB11NTN

Rohm SemiconductorIn Stock: 22248UMB11NTN Datasheet

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UMB2NTN

Rohm SemiconductorIn Stock: 5962UMB2NTN Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the PUMB18,115 is determined by strict adherence to the following electrical and mechanical parameters:

Core Substitution Criteria:

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Maximum Collector Current: 100 mA
• Maximum Collector-Emitter Breakdown Voltage: 50 V
• Package Family: 6-TSSOP, SC-88, SOT-363 (surface mount)
• Mounting Type: Surface Mount
• RoHS3 Compliance: Required
• Moisture Sensitivity Level: 1 (Unlimited)

Variable Parameters Permitting Substitution:

• Base Resistor (R1): 2.2 kOhms to 47 kOhms
• Emitter-Base Resistor (R2): 10 kOhms to 47 kOhms
• DC Current Gain (hFE): 20 to 80 @ specified test conditions
• Vce Saturation: 150 mV to 300 mV @ specified test conditions
• Collector Cutoff Current: 500 nA to 1 µA
• Power Dissipation: 150 mW to 300 mW
• Frequency - Transition: Not specified to 250 MHz

All substitute parts maintain the dual PNP pre-biased configuration and surface mount package compatibility. Variations in internal bias resistor values and DC gain characteristics are acceptable within the specified ranges, as these parameters do not affect mechanical interchangeability or core switching functionality.

Parameter Comparison

Engineering Selection Recommendations

All listed substitute parts maintain active production status and full RoHS3 compliance, ensuring long-term availability and regulatory conformance. Selection among substitute options depends on specific application requirements within the permitted parameter ranges.

MUN5133DW1T1G (onsemi): This substitute provides the closest electrical match to the PUMB18,115, with identical base resistor value (4.7 kOhms) and comparable DC current gain characteristics. The higher emitter-base resistor value (47 kOhms versus 10 kOhms) results in lower base current requirements. Vce saturation is elevated to 250 mV, which is acceptable for general switching applications. Power dissipation is reduced to 250 mW. This part is suitable for applications where the PUMB18,115 experiences supply constraints.

UMB10NTN (Rohm Semiconductor): This substitute features a lower base resistor value (2.2 kOhms), resulting in higher base current and faster switching response. DC current gain is elevated to 80, and transition frequency is specified at 250 MHz, providing enhanced high-frequency performance. Power dissipation is reduced to 150 mW. This configuration is appropriate for applications requiring improved switching speed or higher-frequency operation.

UMB11NTN (Rohm Semiconductor): This substitute maintains identical base and emitter-base resistor values (10 kOhms each) to the PUMB18,115, providing the most direct functional equivalence in bias network configuration. DC current gain is significantly lower at 20, suitable for applications requiring reduced amplification. Transition frequency is specified at 250 MHz. Power dissipation is 150 mW. This part is optimal for designs where bias resistor matching is critical.

UMB2NTN (Rohm Semiconductor): This substitute employs the highest base and emitter-base resistor values (47 kOhms each), resulting in minimal base current draw and lowest power consumption. DC current gain is 68, and transition frequency is 250 MHz. Power dissipation is 150 mW. This configuration is suitable for low-power applications or designs requiring minimal base drive current.

All substitute parts are qualified for surface mount assembly and are compatible with standard PCB manufacturing processes. Selection should be based on specific bias network requirements, switching speed demands, and power budget constraints within the application circuit.

Frequently Asked Questions (FAQ)

Q: Can the PUMB18,115 be directly replaced with any of the listed substitute parts without circuit modification?

A: Direct replacement is possible only when the application circuit does not depend on specific bias resistor values or DC current gain characteristics. The PUMB18,115 features a 4.7 kOhms base resistor and 10 kOhms emitter-base resistor with 50 minimum DC current gain. Substitute parts vary in these parameters. MUN5133DW1T1G maintains the 4.7 kOhms base resistor but uses 47 kOhms for the emitter-base resistor. UMB10NTN, UMB11NTN, and UMB2NTN employ different resistor combinations. If the circuit design is sensitive to bias network impedance or gain characteristics, circuit analysis is required before substitution.

Q: Are all substitute parts available in the same package as the PUMB18,115?

A: Yes. All substitute parts are available in the 6-TSSOP, SC-88, and SOT-363 package family. The PUMB18,115 is supplied in 6-TSSOP tape and reel packaging. MUN5133DW1T1G is supplied in SC-88/SC70-6/SOT-363 tape and reel packaging. UMB10NTN, UMB11NTN, and UMB2NTN are supplied in UMT6 cut tape and Digi-Reel packaging. All packages are mechanically and electrically compatible for surface mount assembly on standard PCBs.

Q: What is the primary difference between the PUMB18,115 and the Rohm UMB series substitutes?

A: The PUMB18,115 does not specify transition frequency, while all Rohm UMB series parts (UMB10NTN, UMB11NTN, UMB2NTN) specify 250 MHz transition frequency, indicating enhanced high-frequency performance. Additionally, the Rohm parts feature reduced maximum power dissipation (150 mW versus 300 mW for the PUMB18,115). The Rohm parts offer variable bias resistor configurations: UMB10NTN uses 2.2 kOhms/47 kOhms, UMB11NTN uses 10 kOhms/10 kOhms, and UMB2NTN uses 47 kOhms/47 kOhms. These variations allow selection based on specific bias network requirements.

Q: Which substitute part is most suitable for low-power applications?

A: UMB2NTN is the optimal choice for low-power applications. It features the highest base and emitter-base resistor values (47 kOhms each), resulting in minimal base current draw and the lowest power dissipation specification (150 mW). The 68 minimum DC current gain is sufficient for general switching applications while maintaining low quiescent current consumption.

Q: Can the PUMB18,115 be used in automotive applications?

A: Yes. The PUMB18,115 carries automotive-grade qualification with AEC-Q100 certification. However, not all substitute parts carry explicit automotive qualification in the provided specifications. MUN5133DW1T1G, UMB10NTN, UMB11NTN, and UMB2NTN are listed as active production parts with RoHS3 compliance and MSL 1 rating, but automotive qualification status is not specified in the provided data. For automotive applications requiring AEC-Q100 certification, the PUMB18,115 is the specified choice.

Q: What is the significance of the DC current gain (hFE) variation among substitute parts?

A: DC current gain determines the base current required to achieve a specified collector current. The PUMB18,115 specifies 50 minimum hFE at 10 mA collector current and 5V Vce. MUN5133DW1T1G specifies 80 hFE at 5 mA and 10V, UMB10NTN specifies 80 hFE at 10 mA and 5V, UMB11NTN specifies 20 hFE at 5 mA and 5V, and UMB2NTN specifies 68 hFE at 5 mA and 5V. Higher hFE values require less base current for saturation, while lower values require more base current. Circuit design must account for these differences to ensure proper biasing and switching performance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (MUN5133DW1T1G, UMB10NTN, UMB11NTN, UMB2NTN) are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity rating, matching the PUMB18,115 specifications. All parts are REACH unaffected and classified as EAR99 for export control purposes.

Q: What is the maximum collector current rating for all parts?

A: All parts, including the PUMB18,115 and all substitute options, are rated for a maximum collector current of 100 mA. This specification is uniform across all listed components and represents a core substitution criterion.

Q: How do Vce saturation specifications differ among the parts?

A: The PUMB18,115 specifies 150 mV maximum Vce saturation at 500 µA base current and 10 mA collector current. MUN5133DW1T1G specifies 250 mV at 1 mA base current and 10 mA collector current. UMB10NTN specifies 300 mV at 250 µA base current and 5 mA collector current. UMB11NTN and UMB2NTN both specify 300 mV at 500 µA base current and 10 mA collector current. Lower Vce saturation values indicate better saturation characteristics and lower on-state voltage drop. The PUMB18,115 offers the lowest saturation voltage, while Rohm parts offer higher saturation voltages but with reduced power dissipation.