PUMB15,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PUMB15,115 is an active pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications in automotive-grade applications. The part carries AEC-Q100 qualification and is RoHS3 compliant.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications allow for components with different internal resistor configurations or electrical characteristics within acceptable operating ranges.

Substiute Parts

PUMB15,115
Nexperia USA Inc.In Stock: 3706PUMB15,115 Datasheet
PUMB15,115
Current Part
MUN5132DW1T1G
onsemiIn Stock: 910MUN5132DW1T1G Datasheet
MUN5132DW1T1G
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MUN5133DW1T1G
onsemiIn Stock: 24400MUN5133DW1T1G Datasheet
MUN5133DW1T1G
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RN2961(TE85L,F)
Toshiba Semiconductor and StorageIn Stock: 4902RN2961(TE85L,F) Datasheet
RN2961(TE85L,F)
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UMB10NTN
Rohm SemiconductorIn Stock: 26491UMB10NTN Datasheet
UMB10NTN
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UMB11NTN
Rohm SemiconductorIn Stock: 22248UMB11NTN Datasheet
UMB11NTN
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UMB2NTN
Rohm SemiconductorIn Stock: 5962UMB2NTN Datasheet
UMB2NTN
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Key Parameters

Parameter PUMB15,115 Value Unit Substitution Relevance
Transistor Type 2 PNP - Pre-Biased (Dual) Critical - must match
Current - Collector (Ic) Max 100 mA Critical - must match or exceed
Voltage - Collector Emitter Breakdown (Max) 50 V Critical - must match or exceed
Resistor - Base (R1) 4.7 kOhms Important - affects biasing behavior
Resistor - Emitter Base (R2) 4.7 kOhms Important - affects biasing behavior
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 10mA, 5V Important - affects amplification
Vce Saturation (Max) @ Ib, Ic 150 mV Important - affects switching performance
Power - Max 300 mW Important - thermal rating
Mounting Type Surface Mount Critical - must match
Package / Case 6-TSSOP, SC-88, SOT-363 Important - physical compatibility
Grade Automotive Application-dependent
Qualification AEC-Q100 Application-dependent
RoHS Status ROHS3 Compliant Regulatory requirement

Substitute Part Grouping Explanation

Substitution of the PUMB15,115 is determined by strict equivalence in the following critical parameters:

Critical Parameters (Must Match Exactly):

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) Max: 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Mounting Type: Surface Mount
  • Package compatibility: 6-TSSOP, SC-88, SOT-363

Important Parameters (Must Be Compatible Within Design Tolerance):

  • Resistor - Base (R1): Internal biasing resistor value
  • Resistor - Emitter Base (R2): Internal biasing resistor value
  • DC Current Gain (hFE): Minimum gain specification
  • Vce Saturation: Maximum saturation voltage
  • Power - Max: Maximum power dissipation rating

Compliance Parameters (Application-Dependent):

  • Grade: Automotive vs. Commercial
  • Qualification: AEC-Q100 certification
  • RoHS Status: Environmental compliance

All substitute parts listed below maintain the core electrical specifications (100 mA collector current, 50 V breakdown voltage) and surface mount packaging. Variations in internal resistor values, gain characteristics, and power ratings are noted to enable informed selection based on specific circuit requirements.

Parameter Comparison

Parameter PUMB15,115 (Nexperia) MUN5132DW1T1G (onsemi) MUN5133DW1T1G (onsemi) RN2961(TE85L,F) (Toshiba) UMB10NTN (Rohm) UMB11NTN (Rohm) UMB2NTN (Rohm)
Manufacturer Nexperia USA Inc. onsemi onsemi Toshiba Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Transistor Type 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual) 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) Max 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 4.7 kOhms 2.2 kOhms 10 kOhms 47 kOhms
Resistor - Emitter Base (R2) 4.7 kOhms 4.7 kOhms 47 kOhms 4.7 kOhms 47 kOhms 10 kOhms 47 kOhms
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 10mA, 5V 15 @ 5mA, 10V 80 @ 5mA, 10V 30 @ 10mA, 5V 80 @ 10mA, 5V 20 @ 5mA, 5V 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150 mV @ 500µA, 10mA 250 mV @ 1mA, 10mA 250 mV @ 1mA, 10mA 300 mV @ 250µA, 5mA 300 mV @ 250µA, 5mA 300 mV @ 500µA, 10mA 300 mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1 µA 500 nA 500 nA 100 nA (ICBO) 500 nA 500 nA 500 nA
Frequency - Transition 200 MHz 250 MHz 250 MHz 250 MHz
Power - Max 300 mW 250 mW 250 mW 200 mW 150 mW 150 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant RoHS Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Direct Electrical Equivalents (Identical Biasing Resistor Configuration):

The MUN5132DW1T1G and RN2961(TE85L,F) maintain the same internal resistor configuration (R1 = 4.7 kOhms, R2 = 4.7 kOhms) as the PUMB15,115. These parts are electrically equivalent for applications where the specific biasing network is critical. The MUN5132DW1T1G is available in higher inventory (821 pcs) and maintains ROHS3 compliance. The RN2961(TE85L,F) offers higher transition frequency (200 MHz) and lower collector cutoff current (100 nA), suitable for higher-speed switching applications.

Alternative Biasing Configurations:

The MUN5133DW1T1G differs in R2 configuration (47 kOhms vs. 4.7 kOhms) and provides higher DC current gain (80 vs. 30), resulting in different biasing behavior. This part is suitable for applications requiring higher gain or different biasing characteristics. Inventory availability is significantly higher (24,300 pcs).

The Rohm Semiconductor parts (UMB10NTN, UMB11NTN, UMB2NTN) offer alternative resistor configurations with transition frequencies up to 250 MHz. These parts are suitable for higher-frequency applications and are available in higher quantities. UMB10NTN and UMB11NTN provide different gain and biasing characteristics compared to the PUMB15,115.

Compliance and Qualification:

The PUMB15,115 carries automotive-grade qualification (AEC-Q100). Substitute parts should be selected based on application requirements. All listed substitutes maintain RoHS3 compliance and MSL 1 rating. For automotive applications requiring AEC-Q100 qualification, the PUMB15,115 and its direct substitutes from Nexperia and onsemi are preferred.

Power Dissipation Considerations:

The PUMB15,115 has a maximum power rating of 300 mW. Substitute parts with lower power ratings (MUN5132DW1T1G, MUN5133DW1T1G at 250 mW; RN2961(TE85L,F), UMB10NTN, UMB11NTN, UMB2NTN at 150-200 mW) are suitable for applications within their respective thermal limits.

Frequently Asked Questions (FAQ)

Q: Can I substitute the PUMB15,115 with any of the listed parts?

A: Substitution depends on your specific circuit requirements. All listed parts share the same critical specifications: dual PNP pre-biased configuration, 100 mA collector current, and 50 V breakdown voltage. However, internal resistor values differ, which affects biasing behavior and gain characteristics. Select a substitute based on whether your circuit requires identical biasing (MUN5132DW1T1G, RN2961(TE85L,F)) or can tolerate alternative configurations.

Q: What is the difference between the PUMB15,115 and MUN5133DW1T1G?

A: Both are dual PNP pre-biased transistors with identical collector current and voltage ratings. The primary difference is the internal resistor configuration: PUMB15,115 has R1 = 4.7 kOhms and R2 = 4.7 kOhms, while MUN5133DW1T1G has R1 = 4.7 kOhms and R2 = 47 kOhms. This results in different DC current gain (30 vs. 80) and biasing behavior. MUN5133DW1T1G is suitable for applications requiring higher gain.

Q: Are the Rohm parts (UMB series) compatible with the PUMB15,115?

A: The Rohm parts are electrically compatible in terms of core functionality (dual PNP, 100 mA, 50 V) and package type. However, they feature different internal resistor configurations and higher transition frequencies (250 MHz). UMB10NTN has R1 = 2.2 kOhms and R2 = 47 kOhms; UMB11NTN has R1 = 10 kOhms and R2 = 10 kOhms; UMB2NTN has R1 = 47 kOhms and R2 = 47 kOhms. Select based on your circuit's biasing requirements.

Q: Does the PUMB15,115 require automotive qualification?

A: The PUMB15,115 carries AEC-Q100 automotive qualification. If your application requires automotive-grade components, select substitutes with equivalent qualification. The onsemi parts (MUN5132DW1T1G, MUN5133DW1T1G) and Nexperia parts maintain automotive-grade status. Rohm parts are commercial-grade unless otherwise specified.

Q: What is the significance of the transition frequency specification?

A: Transition frequency (fT) indicates the maximum frequency at which the transistor can operate effectively. The PUMB15,115 does not specify this parameter. Substitutes with specified transition frequencies (RN2961(TE85L,F) at 200 MHz, Rohm parts at 250 MHz) are suitable for higher-speed switching applications. For low-frequency applications, transition frequency is not a limiting factor.

Q: Can I use a part with lower power rating than the PUMB15,115?

A: The PUMB15,115 has a 300 mW power rating. Substitutes with lower ratings (250 mW or 150 mW) can be used if your circuit's power dissipation remains within the substitute's thermal limit. Calculate the actual power dissipation in your application (P = Ic × Vce) and ensure it does not exceed the substitute's maximum rating.

Q: What does "pre-biased" mean in the context of these transistors?

A: Pre-biased transistors integrate internal biasing resistors on the same die as the transistor elements. This eliminates the need for external biasing resistors in many applications, reducing component count and board space. The internal resistor values determine the biasing characteristics and must be considered when selecting substitutes.

Q: Are all listed parts available in the same package?

A: All listed parts are available in 6-TSSOP, SC-88, or SOT-363 packages, which are physically compatible. However, the supplier device package designation may differ (e.g., SC-88/SC70-6/SOT-363 for onsemi parts, UMT6 for Rohm parts, US6 for Toshiba). Verify the specific package designation with your supplier to ensure PCB footprint compatibility.

Q: What is the MSL (Moisture Sensitivity Level) rating?

A: All listed parts have MSL 1 (Unlimited), indicating they have unlimited shelf life and do not require special moisture-control handling during storage and assembly. This simplifies supply chain management and reduces storage costs.

Q: How do I determine which substitute is best for my application?

A: Identify your circuit's critical requirements: (1) Required biasing resistor values or acceptable range, (2) Minimum DC current gain needed, (3) Maximum acceptable saturation voltage, (4) Operating frequency range, (5) Maximum power dissipation, (6) Compliance requirements (automotive, RoHS, etc.). Match these requirements against the parameter comparison table to select the most suitable substitute.

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