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PUMB15,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts
Part Overview
The PUMB15,115 is an active pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications in automotive-grade applications. The part carries AEC-Q100 qualification and is RoHS3 compliant.
Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative packaging formats are required for manufacturing processes, or when design specifications allow for components with different internal resistor configurations or electrical characteristics within acceptable operating ranges.
Substiute Parts
Key Parameters
| Parameter | PUMB15,115 Value | Unit | Substitution Relevance |
|---|---|---|---|
| Transistor Type | 2 PNP - Pre-Biased (Dual) | — | Critical - must match |
| Current - Collector (Ic) Max | 100 | mA | Critical - must match or exceed |
| Voltage - Collector Emitter Breakdown (Max) | 50 | V | Critical - must match or exceed |
| Resistor - Base (R1) | 4.7 | kOhms | Important - affects biasing behavior |
| Resistor - Emitter Base (R2) | 4.7 | kOhms | Important - affects biasing behavior |
| DC Current Gain (hFE) Min @ Ic, Vce | 30 @ 10mA, 5V | — | Important - affects amplification |
| Vce Saturation (Max) @ Ib, Ic | 150 | mV | Important - affects switching performance |
| Power - Max | 300 | mW | Important - thermal rating |
| Mounting Type | Surface Mount | — | Critical - must match |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | — | Important - physical compatibility |
| Grade | Automotive | — | Application-dependent |
| Qualification | AEC-Q100 | — | Application-dependent |
| RoHS Status | ROHS3 Compliant | — | Regulatory requirement |
Substitute Part Grouping Explanation
Substitution of the PUMB15,115 is determined by strict equivalence in the following critical parameters:
Critical Parameters (Must Match Exactly):
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) Max: 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Mounting Type: Surface Mount
- Package compatibility: 6-TSSOP, SC-88, SOT-363
Important Parameters (Must Be Compatible Within Design Tolerance):
- Resistor - Base (R1): Internal biasing resistor value
- Resistor - Emitter Base (R2): Internal biasing resistor value
- DC Current Gain (hFE): Minimum gain specification
- Vce Saturation: Maximum saturation voltage
- Power - Max: Maximum power dissipation rating
Compliance Parameters (Application-Dependent):
- Grade: Automotive vs. Commercial
- Qualification: AEC-Q100 certification
- RoHS Status: Environmental compliance
All substitute parts listed below maintain the core electrical specifications (100 mA collector current, 50 V breakdown voltage) and surface mount packaging. Variations in internal resistor values, gain characteristics, and power ratings are noted to enable informed selection based on specific circuit requirements.
Parameter Comparison
| Parameter | PUMB15,115 (Nexperia) | MUN5132DW1T1G (onsemi) | MUN5133DW1T1G (onsemi) | RN2961(TE85L,F) (Toshiba) | UMB10NTN (Rohm) | UMB11NTN (Rohm) | UMB2NTN (Rohm) |
|---|---|---|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | onsemi | onsemi | Toshiba Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) Max | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
| Resistor - Base (R1) | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms | 4.7 kOhms | 2.2 kOhms | 10 kOhms | 47 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms | 4.7 kOhms | 47 kOhms | 4.7 kOhms | 47 kOhms | 10 kOhms | 47 kOhms |
| DC Current Gain (hFE) Min @ Ic, Vce | 30 @ 10mA, 5V | 15 @ 5mA, 10V | 80 @ 5mA, 10V | 30 @ 10mA, 5V | 80 @ 10mA, 5V | 20 @ 5mA, 5V | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500µA, 10mA | 250 mV @ 1mA, 10mA | 250 mV @ 1mA, 10mA | 300 mV @ 250µA, 5mA | 300 mV @ 250µA, 5mA | 300 mV @ 500µA, 10mA | 300 mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1 µA | 500 nA | 500 nA | 100 nA (ICBO) | 500 nA | 500 nA | 500 nA |
| Frequency - Transition | — | — | — | 200 MHz | 250 MHz | 250 MHz | 250 MHz |
| Power - Max | 300 mW | 250 mW | 250 mW | 200 mW | 150 mW | 150 mW | 150 mW |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP, SC-88, SOT-363 |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | RoHS Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Direct Electrical Equivalents (Identical Biasing Resistor Configuration):
The MUN5132DW1T1G and RN2961(TE85L,F) maintain the same internal resistor configuration (R1 = 4.7 kOhms, R2 = 4.7 kOhms) as the PUMB15,115. These parts are electrically equivalent for applications where the specific biasing network is critical. The MUN5132DW1T1G is available in higher inventory (821 pcs) and maintains ROHS3 compliance. The RN2961(TE85L,F) offers higher transition frequency (200 MHz) and lower collector cutoff current (100 nA), suitable for higher-speed switching applications.
Alternative Biasing Configurations:
The MUN5133DW1T1G differs in R2 configuration (47 kOhms vs. 4.7 kOhms) and provides higher DC current gain (80 vs. 30), resulting in different biasing behavior. This part is suitable for applications requiring higher gain or different biasing characteristics. Inventory availability is significantly higher (24,300 pcs).
The Rohm Semiconductor parts (UMB10NTN, UMB11NTN, UMB2NTN) offer alternative resistor configurations with transition frequencies up to 250 MHz. These parts are suitable for higher-frequency applications and are available in higher quantities. UMB10NTN and UMB11NTN provide different gain and biasing characteristics compared to the PUMB15,115.
Compliance and Qualification:
The PUMB15,115 carries automotive-grade qualification (AEC-Q100). Substitute parts should be selected based on application requirements. All listed substitutes maintain RoHS3 compliance and MSL 1 rating. For automotive applications requiring AEC-Q100 qualification, the PUMB15,115 and its direct substitutes from Nexperia and onsemi are preferred.
Power Dissipation Considerations:
The PUMB15,115 has a maximum power rating of 300 mW. Substitute parts with lower power ratings (MUN5132DW1T1G, MUN5133DW1T1G at 250 mW; RN2961(TE85L,F), UMB10NTN, UMB11NTN, UMB2NTN at 150-200 mW) are suitable for applications within their respective thermal limits.
Frequently Asked Questions (FAQ)
Q: Can I substitute the PUMB15,115 with any of the listed parts?
A: Substitution depends on your specific circuit requirements. All listed parts share the same critical specifications: dual PNP pre-biased configuration, 100 mA collector current, and 50 V breakdown voltage. However, internal resistor values differ, which affects biasing behavior and gain characteristics. Select a substitute based on whether your circuit requires identical biasing (MUN5132DW1T1G, RN2961(TE85L,F)) or can tolerate alternative configurations.
Q: What is the difference between the PUMB15,115 and MUN5133DW1T1G?
A: Both are dual PNP pre-biased transistors with identical collector current and voltage ratings. The primary difference is the internal resistor configuration: PUMB15,115 has R1 = 4.7 kOhms and R2 = 4.7 kOhms, while MUN5133DW1T1G has R1 = 4.7 kOhms and R2 = 47 kOhms. This results in different DC current gain (30 vs. 80) and biasing behavior. MUN5133DW1T1G is suitable for applications requiring higher gain.
Q: Are the Rohm parts (UMB series) compatible with the PUMB15,115?
A: The Rohm parts are electrically compatible in terms of core functionality (dual PNP, 100 mA, 50 V) and package type. However, they feature different internal resistor configurations and higher transition frequencies (250 MHz). UMB10NTN has R1 = 2.2 kOhms and R2 = 47 kOhms; UMB11NTN has R1 = 10 kOhms and R2 = 10 kOhms; UMB2NTN has R1 = 47 kOhms and R2 = 47 kOhms. Select based on your circuit's biasing requirements.
Q: Does the PUMB15,115 require automotive qualification?
A: The PUMB15,115 carries AEC-Q100 automotive qualification. If your application requires automotive-grade components, select substitutes with equivalent qualification. The onsemi parts (MUN5132DW1T1G, MUN5133DW1T1G) and Nexperia parts maintain automotive-grade status. Rohm parts are commercial-grade unless otherwise specified.
Q: What is the significance of the transition frequency specification?
A: Transition frequency (fT) indicates the maximum frequency at which the transistor can operate effectively. The PUMB15,115 does not specify this parameter. Substitutes with specified transition frequencies (RN2961(TE85L,F) at 200 MHz, Rohm parts at 250 MHz) are suitable for higher-speed switching applications. For low-frequency applications, transition frequency is not a limiting factor.
Q: Can I use a part with lower power rating than the PUMB15,115?
A: The PUMB15,115 has a 300 mW power rating. Substitutes with lower ratings (250 mW or 150 mW) can be used if your circuit's power dissipation remains within the substitute's thermal limit. Calculate the actual power dissipation in your application (P = Ic × Vce) and ensure it does not exceed the substitute's maximum rating.
Q: What does "pre-biased" mean in the context of these transistors?
A: Pre-biased transistors integrate internal biasing resistors on the same die as the transistor elements. This eliminates the need for external biasing resistors in many applications, reducing component count and board space. The internal resistor values determine the biasing characteristics and must be considered when selecting substitutes.
Q: Are all listed parts available in the same package?
A: All listed parts are available in 6-TSSOP, SC-88, or SOT-363 packages, which are physically compatible. However, the supplier device package designation may differ (e.g., SC-88/SC70-6/SOT-363 for onsemi parts, UMT6 for Rohm parts, US6 for Toshiba). Verify the specific package designation with your supplier to ensure PCB footprint compatibility.
Q: What is the MSL (Moisture Sensitivity Level) rating?
A: All listed parts have MSL 1 (Unlimited), indicating they have unlimited shelf life and do not require special moisture-control handling during storage and assembly. This simplifies supply chain management and reduces storage costs.
Q: How do I determine which substitute is best for my application?
A: Identify your circuit's critical requirements: (1) Required biasing resistor values or acceptable range, (2) Minimum DC current gain needed, (3) Maximum acceptable saturation voltage, (4) Operating frequency range, (5) Maximum power dissipation, (6) Compliance requirements (automotive, RoHS, etc.). Match these requirements against the parameter comparison table to select the most suitable substitute.
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