PUMB13/ZLX Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMB13/ZLX is a pre-biased dual PNP bipolar transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PUMB13/ZLX is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and legacy system support. Substitute parts must maintain electrical compatibility across critical parameters including collector current rating, breakdown voltage, internal resistor values, and saturation characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min)	100	@ 10mA, 5V
Vce Saturation (Max)	100	mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1	µA
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PUMB13/ZLX is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Parameters:

Transistor configuration: 2 PNP - Pre-Biased (Dual)
Maximum collector current: 100mA
Maximum collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 4.7kOhms
Internal emitter-base resistor (R2): 47kOhms
Surface mount package compatibility: 6-TSSOP, SC-88, or SOT-363
RoHS3 compliance
MSL rating: 1 (Unlimited)

Acceptable Variation Parameters:

DC current gain (hFE) minimum: 80 or higher
Vce saturation: up to 250mV (original specification 100mV)
Collector cutoff current: up to 500nA (original specification 1µA)
Power dissipation: 200mW or higher (original specification 300mW)
Transition frequency: not a limiting factor for substitution

All substitute parts listed maintain the mandatory equivalence parameters. Variations in DC current gain, saturation voltage, and cutoff current remain within acceptable operational ranges for pre-biased transistor applications.

Parameter Comparison

Parameter	PUMB13/ZLX	PUMB13,115	MUN5133DW1T1G	NSVMUN5133DW1T1G	RN2906,LF
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	onsemi	onsemi	Toshiba Semiconductor and Storage
Transistor Type	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA	100mA	100mA	100mA	100mA
Voltage - Collector Emitter Breakdown (Max)	50V	50V	50V	50V	50V
Resistor - Base (R1)	4.7kOhms	4.7kOhms	4.7kOhms	4.7kOhms	4.7kOhms
Resistor - Emitter Base (R2)	47kOhms	47kOhms	47kOhms	47kOhms	47kOhms
DC Current Gain (hFE) (Min)	100 @ 10mA, 5V	100 @ 10mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 10mA, 5V
Vce Saturation (Max)	100mV @ 250µA, 5mA	100mV @ 250µA, 5mA	250mV @ 1mA, 10mA	250mV @ 300µA, 10mA	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA	1µA	500nA	500nA	500nA
Power - Max	300mW	300mW	250mW	250mW	200mW
Package / Case	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363	6-TSSOP, SC-88, SOT-363
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
AEC-Q101 Qualification	Yes	No	No	Yes	No

Engineering Selection Recommendations

PUMB13,115 (Nexperia USA Inc.)

The PUMB13,115 is the direct active equivalent to the obsolete PUMB13/ZLX. Both parts are manufactured by Nexperia USA Inc. and share identical electrical specifications including DC current gain, saturation voltage, and collector cutoff current. The PUMB13,115 is available in active production status with higher inventory levels (4080 pcs). This part is the primary recommendation for direct replacement in non-automotive applications. Both parts are ROHS3 compliant with MSL rating 1.

MUN5133DW1T1G (onsemi)

The MUN5133DW1T1G is an active onsemi equivalent with identical core electrical parameters. This part exhibits lower collector cutoff current (500nA vs. 1µA) and higher saturation voltage (250mV vs. 100mV), representing acceptable operational variations for pre-biased transistor circuits. Power dissipation is rated at 250mW, which is lower than the original 300mW specification. This part is suitable for applications where the lower power rating and higher saturation voltage do not present design constraints. Inventory availability is substantial (24300 pcs).

NSVMUN5133DW1T1G (onsemi)

The NSVMUN5133DW1T1G is an automotive-qualified variant of the MUN5133DW1T1G, carrying AEC-Q101 certification matching the original PUMB13/ZLX qualification level. This part is recommended for automotive applications requiring AEC-Q101 compliance. Electrical specifications are identical to the MUN5133DW1T1G. Inventory availability is lower (1158 pcs) compared to other substitutes.

RN2906,LF (Toshiba Semiconductor and Storage)

The RN2906,LF is an active Toshiba equivalent with identical core electrical parameters. This part exhibits lower collector cutoff current (500nA vs. 1µA), higher saturation voltage (300mV vs. 100mV), and lower power dissipation rating (200mW vs. 300mW). The transition frequency specification is provided (200MHz) compared to the original 180MHz. This part is suitable for applications where the lower power rating and higher saturation voltage are acceptable. Inventory availability is good (6095 pcs).

Frequently Asked Questions (FAQ)

Q: Can the PUMB13,115 be used as a direct replacement for the PUMB13/ZLX?

A: Yes. The PUMB13,115 is manufactured by the same company (Nexperia USA Inc.) and maintains identical electrical specifications including DC current gain, saturation voltage, and collector cutoff current. The primary difference is product status: PUMB13/ZLX is obsolete while PUMB13,115 is in active production. Both parts are ROHS3 compliant with MSL rating 1 (Unlimited).

Q: What are the differences between the onsemi MUN5133DW1T1G and NSVMUN5133DW1T1G?

A: Both parts are electrically identical. The NSVMUN5133DW1T1G carries AEC-Q101 automotive qualification while the MUN5133DW1T1G does not. Select NSVMUN5133DW1T1G for automotive applications requiring AEC-Q101 compliance. Both parts exhibit lower collector cutoff current (500nA vs. 1µA) and higher saturation voltage (250mV vs. 100mV) compared to the original PUMB13/ZLX.

Q: Are there package compatibility issues between substitute parts?

A: No. All substitute parts are available in 6-TSSOP, SC-88, and SOT-363 package options. The PUMB13,115 uses 6-TSSOP supplier device package. The MUN5133DW1T1G and NSVMUN5133DW1T1G use SC-88/SC70-6/SOT-363 supplier device package. The RN2906,LF uses US6 supplier device package. All packages are mechanically and electrically compatible for PCB layout purposes.

Q: What is the significance of the internal resistor values (R1 = 4.7kOhms, R2 = 47kOhms)?

A: These internal resistors define the biasing network of the pre-biased transistor. All substitute parts maintain identical R1 and R2 values, ensuring equivalent switching behavior and biasing characteristics. This is a mandatory equivalence parameter for substitution.

Q: Can I use the RN2906,LF in applications with 300mW power dissipation requirements?

A: No. The RN2906,LF is rated for 200mW maximum power dissipation compared to the original PUMB13/ZLX specification of 300mW. Applications requiring sustained 300mW dissipation must use PUMB13,115 (300mW) or MUN5133DW1T1G/NSVMUN5133DW1T1G (250mW). Verify thermal design margins for the selected substitute.

Q: What does the higher saturation voltage (250mV or 300mV) in substitute parts mean for circuit operation?

A: Saturation voltage represents the minimum voltage drop across the transistor when fully conducting. Substitute parts with higher saturation voltage (250mV or 300mV vs. original 100mV) will exhibit slightly higher voltage drop in saturated switching states. This affects power dissipation and output voltage levels. Verify circuit tolerance to these variations before substitution.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (PUMB13,115, MUN5133DW1T1G, NSVMUN5133DW1T1G, and RN2906,LF) are ROHS3 compliant with MSL rating 1 (Unlimited). All parts are REACH unaffected.

Q: Which substitute part should I select for new automotive designs?

A: The NSVMUN5133DW1T1G is the recommended choice for automotive applications. This part carries AEC-Q101 qualification matching the original PUMB13/ZLX specification. It is manufactured by onsemi and maintains all mandatory electrical equivalence parameters. Verify that the higher saturation voltage (250mV vs. 100mV) and lower power rating (250mW vs. 300mW) are acceptable for your specific application.

Q: What is the difference between the original PUMB13/ZLX and PUMB13,115 in terms of packaging?

A: The PUMB13/ZLX packaging information is not fully specified in the original documentation. The PUMB13,115 is supplied in Tape & Reel (TR) format. Both parts use the same 6-TSSOP supplier device package. Verify tape and reel specifications with your procurement requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message