PUMB11/ZLX Pre-Biased Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The PUMB11/ZLX is a pre-biased dual PNP bipolar transistor (BJT) manufactured by Nexperia USA Inc., designed for surface mount applications in 6-TSSOP packaging. This component integrates two PNP transistors with internal biasing resistors, enabling simplified circuit design for switching and amplification applications. The device is rated for 50V collector-emitter breakdown voltage, 100mA maximum collector current, and 300mW power dissipation.

The PUMB11/ZLX carries an obsolete product status. Locating equivalent substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with identical or compatible electrical and mechanical specifications are available from multiple manufacturers.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	10	kOhms
Resistor - Emitter Base (R2)	10	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1	µA
Frequency - Transition	180	MHz
Power - Max	300	mW
Mounting Type	Surface Mount	—
Package / Case	6-TSSOP, SC-88, SOT-363	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PUMB11/ZLX is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363

Secondary Compatibility Parameters:

Resistor - Base (R1): 10kOhms (primary specification)
Resistor - Emitter Base (R2): 10kOhms (primary specification)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V (minimum threshold)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA (maximum threshold)
Power - Max: 300mW (minimum requirement)
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents: Parts matching all primary criteria and secondary parameters within specified tolerances. These parts are pin-compatible and functionally interchangeable without circuit modification.

Category B - Functional Equivalents with Parameter Variations: Parts matching primary criteria but with variations in internal biasing resistors (R1, R2), DC current gain, or saturation voltage. These parts require circuit evaluation to confirm suitability for specific applications.

Parameter Comparison

Part Number	Manufacturer	Product Status	Ic (Max) mA	Vce Breakdown (Max) V	R1 (Base) kOhms	R2 (Emitter Base) kOhms	hFE (Min) @ Ic, Vce	Vce Sat (Max) mV @ Ib, Ic	Power (Max) mW	Package	AEC-Q101
PUMB11/ZLX	Nexperia USA Inc.	Obsolete	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	Yes
PUMB11,115	Nexperia USA Inc.	Active	100	50	10	10	30 @ 5mA, 5V	150 @ 500µA, 10mA	300	6-TSSOP	No
DDA113TU-7-F	Diodes Incorporated	Active	100	50	1	—	100 @ 1mA, 5V	300 @ 1mA, 10mA	200	SOT-363	No
DDA114EU-7-F	Diodes Incorporated	Active	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	200	SOT-363	No
DDA114TU-7-F	Diodes Incorporated	Active	100	50	10	—	100 @ 1mA, 5V	300 @ 100µA, 1mA	200	SOT-363	No
DDA114YU-7-F	Diodes Incorporated	Active	100	50	10	47	68 @ 10mA, 5V	300 @ 250µA, 5mA	200	SOT-363	No
DDA123JU-7-F	Diodes Incorporated	Active	100	50	2.2	47	80 @ 10mA, 5V	300 @ 250µA, 5mA	200	SOT-363	No
DDA124EU-7-F	Diodes Incorporated	Active	100	50	22	22	56 @ 5mA, 5V	300 @ 500µA, 10mA	200	SOT-363	No
MUN5111DW1T1G	onsemi	Active	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	No
NSVMUN5111DW1T3G	onsemi	Active	100	50	10	10	35 @ 5mA, 10V	250 @ 300µA, 10mA	250	SC-88/SOT-363	Yes
RN2902,LF(CT	Toshiba Semiconductor and Storage	Active	100	50	10	10	50 @ 10mA, 5V	300 @ 250µA, 5mA	200	US6	No

Engineering Selection Recommendations

For Automotive Applications with AEC-Q101 Requirement:

The NSVMUN5111DW1T3G (onsemi) is the recommended substitute for the PUMB11/ZLX when automotive qualification is mandatory. This part maintains AEC-Q101 certification, matching the original component's qualification status. Electrical parameters are compatible within acceptable tolerances: identical base and emitter-base resistor values (10kOhms each), DC current gain of 35 @ 5mA, 10V (exceeds the 30 minimum specification), and Vce saturation of 250mV (within acceptable range). Power dissipation is rated at 250mW, which is acceptable for applications designed for 300mW maximum. The part is available in high volume (385,300 pieces in stock) and carries ROHS3 compliance and unlimited moisture sensitivity rating.

For General Industrial Applications without Automotive Requirement:

The PUMB11,115 (Nexperia USA Inc.) provides the most direct electrical equivalence to the PUMB11/ZLX. This part is the active production variant of the obsolete PUMB11/ZLX, with identical electrical specifications: 100mA collector current, 50V breakdown voltage, 10kOhms base and emitter-base resistors, 30 minimum DC current gain, and 300mW power rating. The part is available in high volume (12,578 pieces in stock) with ROHS3 compliance. Note that this part does not carry AEC-Q101 certification.

For Applications Requiring Specific Biasing Resistor Values:

Diodes Incorporated offers multiple DDA series variants with different internal resistor configurations:

DDA114EU-7-F: 10kOhms/10kOhms resistors, matching PUMB11/ZLX biasing
DDA114YU-7-F: 10kOhms/47kOhms resistors, for applications requiring higher emitter-base resistance
DDA123JU-7-F: 2.2kOhms/47kOhms resistors, for applications requiring lower base resistance
DDA124EU-7-F: 22kOhms/22kOhms resistors, for applications requiring higher overall biasing resistance

All DDA variants maintain 100mA collector current and 50V breakdown voltage. Power dissipation is reduced to 200mW, which is acceptable for applications designed for 300mW maximum. Vce saturation is specified at 300mV, which is higher than the PUMB11/ZLX specification of 150mV and must be evaluated for circuit compatibility.

For Applications Requiring Transition Frequency Specification:

The RN2902,LF(CT (Toshiba) maintains the 200MHz transition frequency specification, providing continuity with frequency-dependent circuit designs. This part features 10kOhms base and emitter-base resistors, 50 minimum DC current gain @ 10mA, 5V, and 200mW power rating. The part is available in US6 package (compatible with 6-TSSOP/SOT-363 footprints) with 9,651 pieces in stock.

Frequently Asked Questions (FAQ)

Q: Can the PUMB11,115 directly replace the PUMB11/ZLX without circuit modification?

A: Yes. The PUMB11,115 is the active production equivalent of the PUMB11/ZLX with identical electrical specifications: 100mA collector current, 50V breakdown voltage, 10kOhms base and emitter-base resistors, 30 minimum DC current gain, 150mV Vce saturation, and 300mW power dissipation. Both parts are packaged in 6-TSSOP. No circuit modification is required.

Q: What is the difference between the PUMB11,115 and NSVMUN5111DW1T3G?

A: Both parts are functionally compatible with the PUMB11/ZLX. The PUMB11,115 is manufactured by Nexperia and provides exact electrical equivalence. The NSVMUN5111DW1T3G is manufactured by onsemi and carries AEC-Q101 automotive qualification, making it the required choice for automotive applications. The NSVMUN5111DW1T3G has slightly higher DC current gain (35 vs. 30 minimum) and lower Vce saturation (250mV vs. 150mV), which are acceptable variations. Power dissipation is 250mW versus 300mW for the original part.

Q: Why do some substitute parts have lower power ratings (200mW vs. 300mW)?

A: The PUMB11/ZLX is rated for 300mW maximum power dissipation. Substitute parts with 200mW or 250mW ratings are acceptable for applications where actual power dissipation does not exceed the lower rating. Circuit design must ensure that power dissipation remains within the substitute part's specification. For applications requiring the full 300mW capability, select PUMB11,115 or equivalent parts with 300mW ratings.

Q: Are all substitute parts compatible with the 6-TSSOP package footprint?

A: The PUMB11/ZLX is specified for 6-TSSOP, SC-88, and SOT-363 packages. All substitute parts listed are available in compatible packages: PUMB11,115 in 6-TSSOP, Diodes DDA series in SOT-363, onsemi MUN5111 and NSVMUN5111 in SC-88/SOT-363, and Toshiba RN2902 in US6. These packages are mechanically and electrically compatible. Verify PCB footprint compatibility before assembly.

Q: What is the significance of the different internal resistor values in the DDA series?

A: Pre-biased transistors integrate internal base and emitter-base resistors to establish quiescent bias conditions. Different resistor values alter the transistor's switching speed, saturation characteristics, and current gain. The PUMB11/ZLX uses 10kOhms/10kOhms. DDA114EU-7-F matches this configuration. DDA114YU-7-F (10kOhms/47kOhms) reduces emitter-base current, affecting switching behavior. DDA123JU-7-F (2.2kOhms/47kOhms) increases base current drive. DDA124EU-7-F (22kOhms/22kOhms) reduces overall bias current. Select the resistor configuration that matches your circuit's switching and gain requirements.

Q: Is the NSVMUN5111DW1T3G the only substitute with AEC-Q101 certification?

A: Yes. Among the listed substitutes, only the NSVMUN5111DW1T3G carries AEC-Q101 automotive qualification, matching the PUMB11/ZLX's automotive grade designation. For applications requiring automotive qualification, this part is the specified choice. For non-automotive applications, other substitutes are acceptable based on electrical parameter compatibility.

Q: Can I use DDA114EU-7-F as a direct replacement for PUMB11/ZLX?

A: DDA114EU-7-F is electrically compatible with the PUMB11/ZLX in terms of collector current (100mA), breakdown voltage (50V), and internal resistor values (10kOhms/10kOhms). However, Vce saturation is specified at 300mV versus 150mV for the PUMB11/ZLX, and power dissipation is 200mW versus 300mW. These differences must be evaluated for your specific circuit. If saturation voltage and power dissipation are not critical parameters, DDA114EU-7-F is acceptable. If saturation voltage must remain below 200mV or power dissipation must reach 300mW, select PUMB11,115 instead.

Q: What is the difference between RN2902,LF(CT and other substitutes?

A: The RN2902,LF(CT is manufactured by Toshiba and maintains the 200MHz transition frequency specification of the PUMB11/ZLX. This part is selected when frequency response is a design requirement. It features 10kOhms base and emitter-base resistors, 50 minimum DC current gain, and 200mW power rating. Other substitutes do not specify transition frequency or specify higher frequencies (250MHz for DDA series), which may not be necessary for all applications.

Q: Are there any compliance or certification differences between substitutes?

A: All listed substitutes are ROHS3 compliant and carry unlimited moisture sensitivity rating (MSL 1), matching the PUMB11/ZLX. The primary certification difference is AEC-Q101 automotive qualification, which is carried only by NSVMUN5111DW1T3G and the original PUMB11/ZLX. For automotive applications, NSVMUN5111DW1T3G is required. For non-automotive applications, all substitutes meet compliance requirements.

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