PUMB11,135 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PUMB11,135 is an active pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in a 6-TSSOP surface mount package. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current. The part is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative suppliers are required for supply chain continuity, or when design flexibility permits selection from multiple qualified manufacturers offering compatible electrical and mechanical characteristics.

Substiute Parts

PUMB11,135
Nexperia USA Inc.In Stock: 8840PUMB11,135 Datasheet
PUMB11,135
Current Part
MUN5111DW1T1G
onsemiIn Stock: 4432MUN5111DW1T1G Datasheet
MUN5111DW1T1G
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DDA113TU-7-F
Diodes IncorporatedIn Stock: 2557DDA113TU-7-F Datasheet
DDA113TU-7-F
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DDA114EUQ-7-F
Diodes IncorporatedIn Stock: 770DDA114EUQ-7-F Datasheet
DDA114EUQ-7-F
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DDA114TU-7-F
Diodes IncorporatedIn Stock: 4408DDA114TU-7-F Datasheet
DDA114TU-7-F
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DDA114YU-7-F
Diodes IncorporatedIn Stock: 17212DDA114YU-7-F Datasheet
DDA114YU-7-F
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DDA123JU-7-F
Diodes IncorporatedIn Stock: 7907DDA123JU-7-F Datasheet
DDA123JU-7-F
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DDA143TU-7-F
Diodes IncorporatedIn Stock: 38494DDA143TU-7-F Datasheet
DDA143TU-7-F
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NSVMUN5111DW1T3G
onsemiIn Stock: 385373NSVMUN5111DW1T3G Datasheet
NSVMUN5111DW1T3G
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RN2902,LF(CT
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UMB11NTN
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Key Parameters

Parameter Value Unit
Transistor Type 2 PNP - Pre-Biased (Dual)
Maximum Collector Current (Ic) 100 mA
Collector-Emitter Breakdown Voltage (Max) 50 V
Base Resistor (R1) 10 kOhms
Emitter-Base Resistor (R2) 10 kOhms
DC Current Gain (hFE Min) 30 @ 5mA, 5V
Vce Saturation (Max) 150 mV @ 500µA, 10mA
Maximum Power Dissipation 300 mW
Package Type 6-TSSOP / SC-88 / SOT-363
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the PUMB11,135 is determined by strict alignment of the following critical parameters:

Mandatory Matching Criteria:

  • Transistor configuration: 2 PNP - Pre-Biased (Dual)
  • Maximum collector current: 100mA
  • Collector-emitter breakdown voltage: 50V
  • Base resistor (R1): 10kOhms
  • Emitter-base resistor (R2): 10kOhms
  • Package compatibility: 6-TSSOP, SC-88, or SOT-363
  • Surface mount technology
  • ROHS3 compliance

Acceptable Variation Parameters:

  • DC current gain (hFE): Minimum 30 or higher at specified test conditions
  • Vce saturation: Up to 300mV maximum
  • Maximum power dissipation: 150mW or higher
  • Transition frequency: Present or absent (not a limiting factor)
  • Collector cutoff current: Variations acceptable within specified ranges

Parts meeting all mandatory criteria are classified as direct substitutes. Parts with identical electrical specifications but different internal resistor values or package designations are classified as similar substitutes requiring application-level verification.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce(br) V R1 kOhms R2 kOhms hFE Min Vce Sat (Max) mV P (Max) mW Package Automotive Grade
PUMB11,135 Nexperia USA Inc. 100 50 10 10 30 150 300 6-TSSOP
MUN5111DW1T1G onsemi 100 50 10 10 35 250 250 SC-88
NSVMUN5111DW1T3G onsemi 100 50 10 10 35 250 250 SC-88 AEC-Q101
DDA113TU-7-F Diodes Incorporated 100 50 1 100 300 200 SOT-363
DDA114EUQ-7-F Diodes Incorporated 100 50 10 10 30 300 200 SOT-363 AEC-Q101
DDA114TU-7-F Diodes Incorporated 100 50 10 100 300 200 SOT-363
DDA114YU-7-F Diodes Incorporated 100 50 10 47 68 300 200 SOT-363
DDA123JU-7-F Diodes Incorporated 100 50 2.2 47 80 300 200 SOT-363
DDA143TU-7-F Diodes Incorporated 100 50 4.7 100 300 200 SOT-363
RN2902,LF(CT Toshiba Semiconductor and Storage 100 50 10 10 50 300 200 US6
UMB11NTN Rohm Semiconductor 100 50 10 10 20 300 150 UMT6

Engineering Selection Recommendations

Direct Substitutes (Identical Electrical and Mechanical Specifications):

MUN5111DW1T1G and NSVMUN5111DW1T3G from onsemi provide direct substitution with matching 10kOhm base and emitter-base resistors, 100mA collector current, and 50V breakdown voltage. Both parts are ROHS3 compliant. NSVMUN5111DW1T3G carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade components. Package designation differs (SC-88 versus 6-TSSOP) but both are mechanically compatible within the SOT-363 family.

DDA114EUQ-7-F from Diodes Incorporated matches all critical electrical parameters including 10kOhm resistor values and 30mV minimum hFE specification. This part includes AEC-Q101 automotive qualification and is ROHS3 compliant. The SOT-363 package is mechanically equivalent to the 6-TSSOP designation.

Similar Substitutes (Acceptable Variations in Secondary Parameters):

DDA113TU-7-F, DDA114TU-7-F, DDA114YU-7-F, DDA123JU-7-F, and DDA143TU-7-F from Diodes Incorporated maintain the core 100mA/50V specifications but feature different internal resistor configurations. These parts are ROHS3 compliant and operate within acceptable saturation voltage and power dissipation ranges. Selection among these variants depends on application-specific biasing requirements.

RN2902,LF(CT from Toshiba Semiconductor and Storage provides equivalent electrical performance with 10kOhm resistor matching and 200MHz transition frequency. The US6 package is mechanically compatible within the SOT-363 family. ROHS3 compliance is confirmed.

UMB11NTN from Rohm Semiconductor maintains 10kOhm resistor values and 50V breakdown voltage with 150mW maximum power dissipation. The UMT6 package is mechanically compatible. This part is ROHS3 compliant and suitable for applications where lower power dissipation is acceptable.

Product Status and Compliance:

All listed substitute parts maintain Active product status. All parts are ROHS3 compliant and REACH unaffected. Moisture sensitivity level is MSL 1 (Unlimited) across all alternatives, matching the primary part specification.

Frequently Asked Questions (FAQ)

Q: Can MUN5111DW1T1G replace PUMB11,135 in all applications?

A: MUN5111DW1T1G is electrically equivalent with matching 10kOhm base and emitter-base resistors, 100mA collector current, and 50V breakdown voltage. The SC-88 package designation differs from 6-TSSOP, but both are mechanically compatible within the SOT-363 family. Verify PCB footprint compatibility before substitution.

Q: What is the difference between DDA114EUQ-7-F and DDA114TU-7-F?

A: Both parts share identical collector current (100mA), breakdown voltage (50V), and base resistor (10kOhms) specifications. DDA114EUQ-7-F includes AEC-Q101 automotive qualification and specifies 10kOhm emitter-base resistor. DDA114TU-7-F does not specify the emitter-base resistor value. DDA114EUQ-7-F is preferred for automotive applications.

Q: Why do some substitute parts have different internal resistor values?

A: Pre-biased transistors integrate internal biasing resistors to establish quiescent operating points. Different resistor configurations (such as DDA123JU-7-F with 2.2kOhm base and 47kOhm emitter-base resistors) alter the biasing characteristics and switching speed. Selection depends on application-specific circuit requirements. Parts with identical resistor values to PUMB11,135 (10kOhm/10kOhms) provide direct functional equivalence.

Q: Is NSVMUN5111DW1T3G suitable for automotive applications?

A: NSVMUN5111DW1T3G carries AEC-Q101 automotive qualification and is ROHS3 compliant. It matches all electrical specifications of PUMB11,135 including 10kOhm resistor values, 100mA collector current, and 50V breakdown voltage. This part is suitable for automotive-grade applications.

Q: What is the significance of the 250MHz transition frequency in DDA114 variants?

A: Transition frequency indicates the frequency at which current gain drops to unity. DDA114 variants specify 250MHz transition frequency, while PUMB11,135 does not specify this parameter. Higher transition frequency supports faster switching applications. For applications not requiring high-frequency operation, this difference is not limiting.

Q: Can UMB11NTN be used as a direct replacement despite lower power dissipation (150mW versus 300mW)?

A: UMB11NTN is suitable for applications where power dissipation does not exceed 150mW. If the circuit design requires the full 300mW capability of PUMB11,135, UMB11NTN is not appropriate. Verify application power requirements before substitution.

Q: Are all substitute parts available in the same package?

A: Substitute parts use different package designations (6-TSSOP, SC-88, SOT-363, US6, UMT6) but all are mechanically compatible within the SOT-363 family. Verify PCB footprint compatibility with your specific package requirement before component selection.

Q: What does ROHS3 compliance mean for these parts?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, hexavalent chromium, and specific brominated flame retardants. All listed substitute parts are ROHS3 compliant, matching the primary part specification.

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