PSMN9R0-30LL,115 N-Channel MOSFET 30V 21A Equivalent & Substitute Parts

Part Overview

The PSMN9R0-30LL,115 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 30V drain-to-source voltage with 21A continuous drain current at 25°C (Tc). The device is packaged in an 8-DFN3333 (3.3x3.3) surface mount configuration with 50W maximum power dissipation. This part is classified as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance parameters while accommodating package variations within the 8-DFN family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	21	A (Tc)
On-State Resistance (Rds On) @ 5A, 10V	9	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	2.15	V
Gate Charge (Qg) @ 10V	20.6	nC
Input Capacitance (Ciss) @ 15V	1193	pF
Maximum Gate-Source Voltage (Vgs)	±20	V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-DFN3333 (3.3x3.3)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the PSMN9R0-30LL,115 are selected based on strict electrical and mechanical compatibility criteria. All substitute candidates must satisfy the following mandatory parameters:

Electrical Compatibility Requirements:

Drain-to-Source Voltage (Vdss): 30V minimum
Continuous Drain Current (Id) @ 25°C: 21A or greater
Gate-Source Threshold Voltage (Vgs(th)): Within ±0.5V of 2.15V
Maximum Gate-Source Voltage (Vgs): ±20V or greater
Operating Temperature Range: -55°C to 150°C or broader
RoHS3 Compliance and MSL Level 1 required

Mechanical Compatibility Requirements:

Surface Mount technology
8-pin DFN package family (8-DFN-EP, 8-PowerVDFN, 8-PowerTDFN acceptable)
Package footprint compatibility within 3.3x3.3mm to 3.5x3.5mm envelope

Performance Parameters for Substitution:

On-State Resistance (Rds On): Lower or equal values preferred; values up to 20mOhm acceptable
Gate Charge (Qg): 12nC to 98nC range acceptable
Input Capacitance (Ciss): 660pF to 7600pF range acceptable
Power Dissipation: 15.5W to 83W range acceptable

Substitute parts are grouped into three categories based on current rating alignment and thermal performance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Package	Status
PSMN9R0-30LL,115	NXP USA Inc.	30	21 (Tc)	9 @ 5A, 10V	2.15 @ 1mA	20.6 @ 10V	1193 @ 15V	50 (Tc)	8-DFN3333	Obsolete
AON7400A	Alpha & Omega Semiconductor	30	40 (Tc)	7.5 @ 20A, 10V	2.5 @ 250µA	24 @ 10V	1380 @ 15V	25 (Tc)	8-DFN-EP (3x3)	Not For New Designs
AON7406	Alpha & Omega Semiconductor	30	25 (Tc)	17 @ 9A, 10V	2.4 @ 250µA	18 @ 10V	888 @ 15V	15.5 (Tc)	8-DFN-EP (3x3)	Not For New Designs
AON7410	Alpha & Omega Semiconductor	30	24 (Tc)	20 @ 8A, 10V	2.5 @ 250µA	12 @ 10V	660 @ 15V	20 (Tc)	8-DFN-EP (3x3)	Not For New Designs
BSC025N03MSGATMA1	Infineon Technologies	30	100 (Tc)	2.5 @ 30A, 10V	2 @ 250µA	98 @ 10V	7600 @ 15V	83 (Tc)	8-PowerTDFN	Active
BSZ019N03LSATMA1	Infineon Technologies	30	40 (Tc)	1.9 @ 20A, 10V	2 @ 250µA	44 @ 10V	2800 @ 15V	69 (Tc)	8-PowerTDFN	Active
BSZ035N03LSGATMA1	Infineon Technologies	30	40 (Tc)	3.5 @ 20A, 10V	2.2 @ 250µA	56 @ 10V	4400 @ 15V	69 (Tc)	8-PowerTDFN	Active
BSZ035N03MSGATMA1	Infineon Technologies	30	40 (Tc)	3.5 @ 20A, 10V	2 @ 250µA	74 @ 10V	5700 @ 15V	69 (Tc)	8-PowerTDFN	Active
BSZ050N03LSGATMA1	Infineon Technologies	30	40 (Tc)	5 @ 20A, 10V	2.2 @ 250µA	35 @ 10V	2800 @ 15V	50 (Tc)	8-PowerTDFN	Active
BSZ050N03MSGATMA1	Infineon Technologies	30	40 (Tc)	4.5 @ 20A, 10V	2 @ 250µA	46 @ 10V	3600 @ 15V	48 (Tc)	8-PowerTDFN	Active

Engineering Selection Recommendations

Category 1: Direct Current Rating Equivalents (21A–25A Tc)

The AON7410 (24A Tc) and AON7406 (25A Tc) provide the closest current rating alignment to the PSMN9R0-30LL,115 (21A Tc). Both devices are manufactured by Alpha & Omega Semiconductor and packaged in 8-DFN-EP (3x3) format. These parts maintain 30V Vdss rating and operate across the -55°C to 150°C temperature range. Both are classified as "Not For New Designs," indicating limited long-term availability. The AON7410 exhibits lower gate charge (12nC) and input capacitance (660pF), making it suitable for applications requiring minimal switching losses. The AON7406 provides intermediate performance characteristics with 18nC gate charge and 888pF input capacitance.

Category 2: Enhanced Current Capacity Substitutes (40A Tc)

The Infineon OptiMOS™ series devices (BSZ019N03LSATMA1, BSZ035N03LSGATMA1, BSZ035N03MSGATMA1, BSZ050N03LSGATMA1, BSZ050N03MSGATMA1) and Alpha & Omega AON7400A all provide 40A continuous drain current at 25°C (Tc), exceeding the original 21A specification. These parts are packaged in 8-PowerTDFN or 8-DFN-EP configurations and maintain 30V Vdss rating. Infineon devices carry Active product status, ensuring long-term availability and supply continuity. The BSZ019N03LSATMA1 offers the lowest on-state resistance (1.9mOhm @ 20A, 10V) among this group, reducing conduction losses. The BSZ050N03LSGATMA1 and BSZ050N03MSGATMA1 provide balanced performance with 5mOhm and 4.5mOhm on-state resistance respectively, matching the original 50W power dissipation specification.

Category 3: High-Performance Substitute (100A Tc)

The BSC025N03MSGATMA1 from Infineon represents a high-performance alternative with 100A continuous drain current at 25°C (Tc) and 83W maximum power dissipation. This device is packaged in 8-PowerTDFN format and carries Active product status. The extremely low on-state resistance (2.5mOhm @ 30A, 10V) and high current capacity make this part suitable for applications requiring significant thermal headroom and reduced conduction losses. Higher gate charge (98nC) and input capacitance (7600pF) require consideration in switching circuit design.

Compliance and Certification:

All substitute parts listed maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original part specifications. All devices operate across the -55°C to 150°C temperature range. Selection between substitute parts depends on application-specific requirements for current capacity, thermal performance, switching frequency, and gate drive circuit capabilities.

Frequently Asked Questions (FAQ)

Q1: Can AON7410 directly replace PSMN9R0-30LL,115 in existing PCB layouts?

The AON7410 is packaged in 8-DFN-EP (3x3) format, while the original part uses 8-DFN3333 (3.3x3.3). Both packages are 8-pin DFN variants with similar footprints. PCB layout compatibility depends on specific pad dimensions and spacing defined in the respective datasheets. Verify footprint alignment before substitution.

Q2: What is the primary advantage of Infineon OptiMOS™ devices over Alpha & Omega alternatives?

Infineon OptiMOS™ series devices (BSZ019N03LSATMA1, BSZ035N03LSGATMA1, BSZ050N03LSGATMA1, BSZ050N03MSGATMA1) carry Active product status, ensuring long-term availability and supply continuity. Alpha & Omega AON7400A, AON7406, and AON7410 are classified as "Not For New Designs," indicating limited future support. For new designs, Infineon devices are preferred.

Q3: Which substitute part provides the lowest on-state resistance?

The BSC025N03MSGATMA1 provides the lowest on-state resistance at 2.5mOhm @ 30A, 10V. The BSZ019N03LSATMA1 offers 1.9mOhm @ 20A, 10V. Lower on-state resistance reduces conduction losses and heat generation in high-current applications.

Q4: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed (AON7400A, AON7406, AON7410, BSC025N03MSGATMA1, BSZ019N03LSATMA1, BSZ035N03LSGATMA1, BSZ035N03MSGATMA1, BSZ050N03LSGATMA1, BSZ050N03MSGATMA1) are ROHS3 compliant with MSL Level 1 (Unlimited) moisture sensitivity rating.

Q5: What is the significance of gate charge (Qg) differences between substitute parts?

Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (AON7410 at 12nC) reduces switching losses and allows faster switching frequencies. Higher gate charge (BSC025N03MSGATMA1 at 98nC) requires more gate drive energy but may provide improved noise immunity. Selection depends on gate drive circuit capabilities and switching frequency requirements.

Q6: Can BSC025N03MSGATMA1 be used in applications designed for 21A continuous current?

Yes. The BSC025N03MSGATMA1 is rated for 100A continuous drain current at 25°C (Tc), significantly exceeding the 21A requirement. This provides substantial thermal margin and allows operation at lower junction temperatures. Verify that the gate drive circuit can supply the required gate charge (98nC @ 10V) without exceeding maximum switching frequency specifications.

Q7: What package format differences exist between substitute parts?

The original PSMN9R0-30LL,115 uses 8-DFN3333 (3.3x3.3) packaging. Substitute parts use either 8-DFN-EP (3x3) or 8-PowerTDFN formats. All are surface mount 8-pin packages with exposed pads for thermal management. Verify PCB footprint compatibility before substitution.

Q8: Are there temperature range differences between the original part and substitutes?

No. The original PSMN9R0-30LL,115 and all substitute parts operate across -55°C to 150°C (TJ) temperature range. All devices maintain identical thermal operating specifications.

Q9: Which substitute part best matches the original 50W power dissipation specification?

The BSZ050N03LSGATMA1 and BSZ050N03MSGATMA1 both specify 50W maximum power dissipation at Tc, exactly matching the original part. The BSC025N03MSGATMA1 provides 83W dissipation capability, offering additional thermal headroom.

Q10: What is the difference between Tc and Ta current ratings?

Tc (case temperature) ratings represent continuous drain current at 25°C case temperature, typically used for thermal design calculations. Ta (ambient temperature) ratings represent continuous drain current at 25°C ambient temperature. Tc ratings are generally higher and more conservative for thermal management purposes.

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