PSMN7R8-120PSQ N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN7R8-120PSQ is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 120V drain-to-source voltage and 70A continuous drain current at 25°C. The device is packaged in I2PAK (TO-262-3 Long Leads) through-hole configuration and is designed for high-power switching applications requiring robust thermal performance up to 349W at the case temperature.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this MOSFET topology.

Substiute Parts

PSMN7R8-120PSQ

Nexperia USA Inc.In Stock: 982PSMN7R8-120PSQ Datasheet

Current PartRFQ

IPP076N12N3GXKSA1

Infineon TechnologiesIn Stock: 1153IPP076N12N3GXKSA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PSMN7R8-120PSQ is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 120V
• Continuous Drain Current (Id): Must meet or exceed 70A at 25°C
• On-State Resistance (Rds On): Must be compatible with the application's thermal and switching loss requirements
• Gate Threshold Voltage (Vgs(th)): Must fall within acceptable gate drive voltage ranges
• Operating Temperature Range: Must support -55°C to 175°C junction temperature operation

Mechanical Compatibility Criteria:

• Mounting Type: Through-hole configuration required
• Package Type: Physical footprint and pin configuration must accommodate board layout constraints

The substitute part IPP076N12N3GXKSA1 meets these criteria through equivalent voltage rating (120V Vdss), superior continuous drain current capability (100A vs. 70A), compatible on-state resistance characteristics (7.6 mOhm @ 100A, 10V), matching gate threshold voltage (4V @ 130µA), and identical operating temperature range (-55°C to 175°C). The substitute operates within the same gate voltage specification (±20V maximum) and maintains through-hole mounting compatibility, though in a different package form factor (TO-220-3 vs. I2PAK).

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The PSMN7R8-120PSQ is classified as obsolete, making the IPP076N12N3GXKSA1 a necessary alternative for new procurement and ongoing production support. The substitute part carries active product status from Infineon Technologies, ensuring continued availability and manufacturer support.

Compliance and Certification Alignment: Both the main part and substitute meet identical regulatory requirements: ROHS3 compliance, REACH unaffected status, and MSL Level 1 (unlimited moisture sensitivity). Both are classified under ECCN EAR99 and HTSUS 8541.29.0095, confirming regulatory equivalence for export and supply chain purposes.

Electrical Performance: The substitute part IPP076N12N3GXKSA1 exceeds the electrical specifications of the PSMN7R8-120PSQ across multiple parameters. The 100A continuous drain current rating surpasses the 70A requirement, providing design margin. The on-state resistance of 7.6 mOhm at 100A, 10V is superior to the 7.9 mOhm specification at 25A, 10V. Gate charge is reduced from 167 nC to 101 nC, resulting in lower switching losses and improved gate drive efficiency. Input capacitance is reduced from 9473 pF to 6640 pF, further reducing switching losses.

Package Consideration: The substitute employs TO-220-3 packaging instead of I2PAK (TO-262-3). This represents a different physical form factor and pin configuration. Board layout redesign is required to accommodate the TO-220-3 footprint. Thermal management characteristics differ between packages; the TO-220-3 package provides different thermal resistance pathways compared to I2PAK. Mechanical mounting and heatsink interface requirements must be re-evaluated for the new package type.

Frequently Asked Questions (FAQ)

Q: Can the IPP076N12N3GXKSA1 directly replace the PSMN7R8-120PSQ without circuit modifications?

A: Electrical substitution is valid based on voltage rating, current capability, and gate drive characteristics. However, package form factor differs (TO-220-3 vs. I2PAK). Direct board-level replacement without layout modification is not possible. PCB footprint redesign and heatsink interface re-evaluation are required.

Q: What are the key electrical advantages of the IPP076N12N3GXKSA1 substitute?

A: The substitute provides 100A continuous drain current versus 70A, reducing on-state losses in high-current applications. Gate charge is reduced by 39% (101 nC vs. 167 nC), lowering switching losses. Input capacitance is reduced by 30% (6640 pF vs. 9473 pF), improving gate drive efficiency and reducing EMI.

Q: Are there thermal performance differences between these parts?

A: The main part specifies 349W maximum power dissipation at case temperature. The substitute specifies 188W. This difference reflects package thermal characteristics and die design. Actual thermal performance depends on heatsink design, mounting interface, and application duty cycle. The TO-220-3 package typically provides different thermal resistance than I2PAK.

Q: Do both parts meet the same regulatory and compliance standards?

A: Yes. Both parts are ROHS3 compliant, REACH unaffected, MSL Level 1, and classified under identical ECCN and HTSUS codes. Regulatory substitution is valid for supply chain and export purposes.

Q: What is the gate threshold voltage compatibility between these parts?

A: Both parts specify 4V maximum gate threshold voltage, though measured at different drain currents (1mA for the main part, 130µA for the substitute). Gate drive voltage compatibility is maintained at the specified 10V drive voltage for both devices.

Q: Is the ±20V maximum gate voltage specification identical for both parts?

A: Yes. Both the PSMN7R8-120PSQ and IPP076N12N3GXKSA1 specify ±20V maximum gate voltage, ensuring gate drive circuit compatibility.

Q: What operating temperature range do both parts support?

A: Both parts operate across -55°C to 175°C junction temperature range, providing identical thermal operating envelope for application design.

Q: Are there any package-related considerations for PCB assembly?

A: Yes. The TO-220-3 package (substitute) differs from I2PAK (main part) in lead configuration, spacing, and mounting interface. Board layout, component placement, and heatsink mounting must be redesigned. Thermal interface material and mounting hardware may require changes based on TO-220-3 specifications.