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PSMN4R2-60PLQ N-Channel 60V 130A MOSFET Equivalent & Substitute Parts
Part Overview
The PSMN4R2-60PLQ is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 60V drain-to-source voltage and 130A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and is designed for high-current switching applications. This part carries an obsolete product status, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part is RoHS3 compliant and REACH unaffected, with unlimited moisture sensitivity level (MSL 1).
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current (Id) @ 25°C | 130 | A (Tc) |
| On-State Resistance (Rds On) @ 25A, 10V | 3.9 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 1mA | 2.1 | V |
| Gate Charge (Qg) @ 10V | 151 | nC |
| Input Capacitance (Ciss) @ 25V | 8533 | pF |
| Power Dissipation (Max) | 263 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-220AB | Through Hole |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the PSMN4R2-60PLQ is determined by the following critical parameters:
Primary Matching Criteria:
- Drain-to-Source Voltage (Vdss): 60V or higher
- Continuous Drain Current (Id): 130A or higher at 25°C
- Package Type: TO-220 or TO-220AB through-hole configuration
- Gate Drive Voltage: Compatible with 10V gate drive
- Operating Temperature Range: -55°C to 175°C or wider
Secondary Compatibility Factors:
- On-State Resistance (Rds On): Lower or equivalent values preferred
- Gate Charge (Qg): Lower values reduce switching losses
- Input Capacitance (Ciss): Lower values improve switching speed
- Power Dissipation: Thermal capability must support application requirements
- Compliance: RoHS3 and REACH status alignment
Substitute parts are grouped into three categories based on voltage and current ratings:
- Direct Equivalents (60V, 130A+): Parts matching or exceeding the primary voltage and current specifications
- Higher Voltage Alternatives (75V+, 130A+): Parts with elevated voltage ratings suitable for applications with higher transient margins
- Reduced Current Alternatives (60V, 100-140A): Parts with slightly lower current ratings for applications not requiring full 130A capacity
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Qg (nC) | Ciss (pF) | Pd Max (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| PSMN4R2-60PLQ | Nexperia USA Inc. | 60 | 130 (Tc) | 3.9 @ 25A, 10V | 151 @ 10V | 8533 @ 25V | 263 (Tc) | TO-220AB | Obsolete |
| IXFP220N06T3 | IXYS | 60 | 220 (Tc) | 4.0 @ 100A, 10V | 136 @ 10V | 8500 @ 25V | 440 (Tc) | TO-220-3 | Last Time Buy |
| IXTP140N055T2 | IXYS | 55 | 140 (Tc) | 5.4 @ 50A, 10V | 82 @ 10V | 4760 @ 25V | 250 (Tc) | TO-220-3 | Active |
| CSD18532KCS | Texas Instruments | 60 | 100 (Tc) | 4.2 @ 100A, 10V | 53 @ 10V | 4680 @ 30V | 250 (Tc) | TO-220-3 | Active |
| AOT262L | Alpha & Omega Semiconductor Inc. | 60 | 140 (Tc) | 3.0 @ 20A, 10V | 115 @ 10V | 9800 @ 30V | 333 (Tc) | TO-220 | Active |
| AOT264L | Alpha & Omega Semiconductor Inc. | 60 | 140 (Tc) | 3.2 @ 20A, 10V | 94 @ 10V | 8400 @ 30V | 333 (Tc) | TO-220 | Active |
| AOT266L | Alpha & Omega Semiconductor Inc. | 60 | 140 (Tc) | 3.5 @ 20A, 10V | 90 @ 10V | 5650 @ 30V | 268 (Tc) | TO-220 | Active |
| FDP047N08-F102 | onsemi | 75 | 164 (Tc) | 4.7 @ 80A, 10V | 152 @ 10V | 9415 @ 25V | 268 (Tc) | TO-220-3 | Active |
| FDP038AN06A0 | onsemi | 60 | 80 (Tc) | 3.8 @ 80A, 10V | 124 @ 10V | 6400 @ 25V | 310 (Tc) | TO-220-3 | Active |
| IRFB3207PBF | Infineon Technologies | 75 | 170 (Tc) | 4.5 @ 75A, 10V | 260 @ 10V | 7600 @ 50V | 330 (Tc) | TO-220AB | Active |
Engineering Selection Recommendations
For Direct Replacement (Same Voltage, Equal or Higher Current):
The AOT262L, AOT264L, and AOT266L from Alpha & Omega Semiconductor Inc. are active production parts rated at 60V with 140A continuous drain current, directly matching the voltage specification of the PSMN4R2-60PLQ. All three parts are RoHS3 compliant and REACH unaffected. The AOT262L offers the lowest on-state resistance at 3.0 mOhm and the highest power dissipation rating at 333W (Tc), making it suitable for high-current applications. The AOT264L and AOT266L provide intermediate performance characteristics with active product status and full compliance certifications.
For Higher Voltage Applications (75V Rating):
The FDP047N08-F102 (onsemi) and IRFB3207PBF (Infineon Technologies) are rated at 75V, providing additional voltage margin for transient protection. The FDP047N08-F102 delivers 164A continuous drain current with 268W power dissipation. The IRFB3207PBF provides 170A continuous drain current with 330W power dissipation and is available in TO-220AB packaging, matching the original part's package footprint. Both parts are RoHS3 compliant and active production items.
For Reduced Current Applications (100-140A Range):
The CSD18532KCS (Texas Instruments) is rated at 60V with 100A continuous drain current and features the lowest gate charge (53 nC) among substitute options, reducing switching losses. The IXTP140N055T2 (IXYS) operates at 55V with 140A continuous drain current and offers the lowest input capacitance (4760 pF), improving switching speed. Both parts are active production items with full compliance certifications.
For Maximum Current Capability (220A):
The IXFP220N06T3 (IXYS) is rated at 60V with 220A continuous drain current and 440W power dissipation, providing the highest current capacity among available substitutes. This part carries a Last Time Buy status, indicating limited future availability.
All recommended substitutes maintain the -55°C to 175°C operating temperature range and are through-hole mounted in TO-220 or TO-220-3 packages compatible with standard PCB layouts.
Frequently Asked Questions (FAQ)
Q: Can the PSMN4R2-60PLQ be directly replaced with the AOT262L?
A: Yes. Both parts are rated at 60V drain-to-source voltage and support 140A continuous drain current at 25°C (Tc). The AOT262L is an active production part with RoHS3 compliance and identical operating temperature range (-55°C to 175°C). The AOT262L features lower on-state resistance (3.0 mOhm vs. 3.9 mOhm) and higher power dissipation capability (333W vs. 263W), making it a direct functional replacement.
Q: What is the difference between TO-220AB and TO-220-3 packages?
A: Both are through-hole mounted packages with three leads (Gate, Drain, Source). The TO-220AB and TO-220-3 designations refer to the same physical package form factor used for power MOSFETs. Parts specified as TO-220AB or TO-220-3 are mechanically and electrically interchangeable in standard PCB layouts.
Q: Why would I select a 75V-rated part instead of a 60V-rated part?
A: Higher voltage-rated parts such as the FDP047N08-F102 (75V) or IRFB3207PBF (75V) provide additional transient voltage margin in applications subject to voltage spikes or overshoot conditions. The 15V additional rating provides protection against transient events while maintaining compatibility with 60V nominal system operation. This selection is application-dependent and should be based on circuit requirements.
Q: Is the IXFP220N06T3 suitable as a substitute despite its Last Time Buy status?
A: The IXFP220N06T3 meets all electrical specifications for substitution, offering 60V rating with 220A continuous drain current. However, Last Time Buy status indicates limited future availability. This part is suitable for immediate replacement needs but not recommended for long-term production designs requiring ongoing component procurement.
Q: What does gate charge (Qg) mean, and why does it vary among substitutes?
A: Gate charge is the total charge required to switch the MOSFET from off to on state at a specified gate voltage (10V in this case). Lower gate charge values reduce switching losses and allow faster switching speeds. The PSMN4R2-60PLQ has 151 nC gate charge, while the CSD18532KCS has only 53 nC, resulting in lower power dissipation during switching transitions. Selection depends on switching frequency and thermal management requirements.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference carry RoHS3 compliance certification. The PSMN4R2-60PLQ is also RoHS3 compliant, ensuring regulatory alignment across all recommended alternatives.
Q: Can I use a part with lower continuous drain current rating than 130A?
A: Substitution with lower current-rated parts (such as the CSD18532KCS at 100A or FDP038AN06A0 at 80A) is only acceptable if the application circuit does not require the full 130A capacity. The selected substitute must support the maximum continuous drain current demanded by the circuit. Undersizing the current rating risks device failure and thermal damage.
Q: What is the significance of on-state resistance (Rds On) in MOSFET selection?
A: On-state resistance determines conduction losses when the MOSFET is in the on state. Lower Rds On values reduce power dissipation and heat generation. The PSMN4R2-60PLQ has 3.9 mOhm Rds On, while the AOT262L has 3.0 mOhm, resulting in approximately 23% lower conduction losses. For high-current applications, lower Rds On values improve efficiency and reduce thermal management requirements.
Q: Is the IRFB3207PBF a suitable substitute despite its 75V rating?
A: Yes. The IRFB3207PBF is rated at 75V with 170A continuous drain current, exceeding the PSMN4R2-60PLQ specifications in both voltage and current. The higher voltage rating provides transient margin without compromising performance in 60V nominal systems. The part is available in TO-220AB packaging, matching the original footprint, and carries active product status with full compliance certifications.
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