PSMN4R0-40YS,115 Equivalent & Substitute Parts

Part Overview

The PSMN4R0-40YS,115 is an N-Channel 40V 100A MOSFET manufactured by Nexperia USA Inc., housed in the LFPAK56 (Power-SO8) surface mount package. This device is rated for 106W maximum power dissipation and operates across a temperature range of -55°C to 175°C. The part is designated as "Not For New Designs," indicating it has been superseded or is in end-of-life status. Identifying equivalent and substitute parts is necessary for applications requiring continued supply, design flexibility, or performance optimization within compatible electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	100	A
Rds On (Max) @ 15A, 10V	4.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	4	V
Gate Charge (Qg) @ 10V	38	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 20V	2410	pF
Power Dissipation (Max)	106	W
Operating Temperature Range	-55 to 175	°C
Package Type	LFPAK56 (Power-SO8)	SC-100, SOT-669
Mounting Type	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the PSMN4R0-40YS,115 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 40V
Package Type: Must be LFPAK or compatible surface mount package (SC-100, SOT-669)
Mounting Type: Surface Mount
Technology: N-Channel MOSFET (Metal Oxide)
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Factors:

Continuous Drain Current (Id): Substitute parts may have lower current ratings; applications must operate within the substitute's maximum Id specification
Rds On (Max): Lower or equal values are acceptable; higher values indicate increased on-state resistance
Gate Charge (Qg): Affects switching speed; variations are acceptable within application requirements
Power Dissipation (Max): Substitute parts with lower ratings require thermal management verification
Operating Temperature Range: Substitute parts with narrower ranges (150°C maximum vs. 175°C) are acceptable for applications not requiring full temperature coverage

The substitute parts listed (HAT2169H-EL-E, HAT2170H-EL-E, HAT2171H-EL-E, HAT2172H-EL-E) all meet the primary substitution criteria. These Renesas Electronics Corporation devices share the 40V Vdss rating, LFPAK package configuration, and ROHS3 compliance. Differences in continuous drain current and power dissipation reflect design trade-offs; selection depends on application current requirements and thermal constraints.

Parameter Comparison

Parameter	PSMN4R0-40YS,115	HAT2169H-EL-E	HAT2170H-EL-E	HAT2171H-EL-E	HAT2172H-EL-E	Unit
Manufacturer	Nexperia USA Inc.	Renesas Electronics	Renesas Electronics	Renesas Electronics	Renesas Electronics
Drain to Source Voltage (Vdss)	40	40	40	40	40	V
Continuous Drain Current (Id) @ 25°C	100 (Tc)	50 (Ta)	45 (Ta)	40 (Ta)	30 (Ta)	A
Rds On (Max) @ 10V	4.2 @ 15A	3.5 @ 25A	4.2 @ 22.5A	4.8 @ 20A	7.5 @ 15A	mOhm
Gate Threshold Voltage (Vgs(th)) @ 1mA	4	2.5	3	—	3	V
Gate Charge (Qg) @ Vgs	38 @ 10V	45 @ 4.5V	62 @ 10V	52 @ 10V	32 @ 10V	nC
Maximum Gate Voltage (Vgs)	±20	±20	±20	±20	±20	V
Input Capacitance (Ciss) @ Vds	2410 @ 20V	6650 @ 10V	4650 @ 10V	3750 @ 10V	2420 @ 10V	pF
Power Dissipation (Max)	106 (Tc)	30 (Tc)	30 (Tc)	25 (Tc)	20 (Tc)	W
Operating Temperature Range	-55 to 175	—	—	—	—	°C
Maximum Operating Temperature (TJ)	175	150	150	150	150	°C
Package Type	LFPAK56 (Power-SO8)	LFPAK	LFPAK	LFPAK	LFPAK	SC-100, SOT-669
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Product Status Consideration: The PSMN4R0-40YS,115 is designated "Not For New Designs," indicating end-of-life or supersession status. All four substitute parts (HAT2169H-EL-E, HAT2170H-EL-E, HAT2171H-EL-E, HAT2172H-EL-E) are listed as "Active" products from Renesas Electronics Corporation, ensuring long-term availability and continued manufacturer support.

Compliance and Certification: All substitute parts maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory standing. Moisture Sensitivity Level (MSL) remains at 1 (Unlimited) across all options, indicating no special handling requirements during storage or assembly.

Current Rating Selection:

HAT2169H-EL-E (50A): Suitable for applications requiring 50A or less continuous drain current. Offers the lowest on-state resistance (3.5 mOhm @ 25A, 10V) among substitutes, providing superior efficiency in moderate-current applications.
HAT2170H-EL-E (45A): Appropriate for applications requiring 45A or less. Rds On of 4.2 mOhm @ 22.5A, 10V matches the original part's on-state resistance specification.
HAT2171H-EL-E (40A): Suitable for applications requiring 40A or less. Provides balanced performance with 4.8 mOhm on-state resistance.
HAT2172H-EL-E (30A): Appropriate for applications requiring 30A or less. Lowest power dissipation (20W) and input capacitance (2420 pF @ 10V), matching the original part's Ciss specification.

Thermal Management: The original PSMN4R0-40YS,115 supports 106W power dissipation with a maximum junction temperature of 175°C. All substitute parts operate to a maximum of 150°C with reduced power dissipation ratings (20W to 30W). Applications operating near the original part's thermal limits require thermal analysis to confirm substitute part adequacy.

Temperature Range: The original part operates from -55°C to 175°C. Substitute parts are specified to 150°C maximum junction temperature. Applications requiring operation above 150°C are not suitable for these substitutes.

Frequently Asked Questions (FAQ)

Q: Can HAT2169H-EL-E directly replace PSMN4R0-40YS,115 in all applications?

A: HAT2169H-EL-E is electrically compatible for applications requiring 50A or less continuous drain current at 40V. The 40V Vdss rating, LFPAK package, and surface mount configuration are identical. However, the reduced power dissipation rating (30W vs. 106W) and maximum junction temperature (150°C vs. 175°C) must be evaluated for thermal compatibility. Applications operating the original part near its 100A rating or 106W power dissipation limit cannot use this substitute.

Q: What is the difference between the four Renesas substitute parts?

A: The four Renesas substitutes differ primarily in continuous drain current rating and associated power dissipation. HAT2169H-EL-E supports 50A, HAT2170H-EL-E supports 45A, HAT2171H-EL-E supports 40A, and HAT2172H-EL-E supports 30A. Selection depends on the application's maximum required drain current. All four share the 40V Vdss rating, LFPAK package, and ROHS3 compliance.

Q: Are the LFPAK56 and LFPAK packages pin-compatible?

A: Both packages use the SC-100 and SOT-669 designations and are surface mount configurations. The LFPAK designation indicates compatibility with the same PCB footprint and assembly process. Pin compatibility is confirmed by the shared package classification.

Q: How does on-state resistance (Rds On) affect substitution suitability?

A: Rds On determines conduction losses and heat generation. The original part specifies 4.2 mOhm @ 15A, 10V. HAT2169H-EL-E offers 3.5 mOhm @ 25A, 10V (lower resistance, better efficiency), while HAT2172H-EL-E offers 7.5 mOhm @ 15A, 10V (higher resistance, increased losses). Lower Rds On values reduce power dissipation; higher values increase it. Selection must account for application current levels and thermal budget.

Q: Why do substitute parts have lower maximum junction temperatures (150°C vs. 175°C)?

A: The substitute parts are from a different manufacturer (Renesas Electronics) with different thermal design specifications. The 150°C maximum junction temperature is a design parameter of these devices. Applications requiring operation above 150°C cannot use these substitutes.

Q: What is the significance of Gate Charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. The original part specifies 38 nC @ 10V. Substitutes range from 32 nC (HAT2172H-EL-E) to 62 nC (HAT2170H-EL-E). Lower gate charge enables faster switching; higher gate charge requires longer switching times. Driver circuits must be capable of supplying the required gate charge within the application's switching frequency constraints.

Q: Are all substitute parts suitable for high-frequency switching applications?

A: Gate charge and input capacitance determine switching performance. HAT2172H-EL-E has the lowest input capacitance (2420 pF @ 10V), matching the original part, and moderate gate charge (32 nC @ 10V), making it suitable for high-frequency applications. HAT2169H-EL-E has higher input capacitance (6650 pF @ 10V), which may limit switching frequency. Application-specific switching frequency requirements must be evaluated against each substitute's capacitance specifications.

Q: Can these substitutes be used in parallel for higher current applications?

A: Parallel operation of MOSFETs requires careful circuit design to ensure current sharing. The provided electrical parameters do not include current-sharing characteristics or matching specifications. Parallel operation is outside the scope of direct substitution and requires detailed thermal and circuit analysis.

Q: What inventory status should be considered when selecting a substitute?

A: HAT2169H-EL-E has 60,064 pieces in stock, HAT2170H-EL-E has 5,900 pieces, HAT2171H-EL-E has 6,545 pieces, and HAT2172H-EL-E has 1,304 pieces. The original PSMN4R0-40YS,115 has 67,021 pieces available. Inventory levels may influence selection for high-volume applications or long-term supply assurance.

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