PSMN3R9-60XSQ N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN3R9-60XSQ is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 60V drain-to-source voltage with 75A continuous drain current in a Through Hole TO-220F package. This device is classified as Obsolete, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

PSMN3R9-60XSQ

NXP USA Inc.In Stock: 6264PSMN3R9-60XSQ Datasheet

Current PartRFQ

IRF2907ZPBF

International RectifierIn Stock: 4287IRF2907ZPBF Datasheet

MFR RecommendedRFQ

STP100N6F7

STMicroelectronicsIn Stock: 2187STP100N6F7 Datasheet

MFR RecommendedRFQ

STP130N6F7

STMicroelectronicsIn Stock: 1542STP130N6F7 Datasheet

MFR RecommendedRFQ

TK58E06N1,S1X

Toshiba Semiconductor and StorageIn Stock: 899TK58E06N1,S1X Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the PSMN3R9-60XSQ are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

• Drain-to-Source Voltage (Vdss): 60V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET Metal Oxide (exact match required)
• Mounting Type: Through Hole (exact match required)
• Package Family: TO-220 variants (mechanical compatibility)
• Gate Voltage Range: ±20V (exact match required)
• Operating Temperature Range: -55°C to 175°C (exact match required)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Minimum 75A at 25°C (equal or greater acceptable)
• On-State Resistance (Rds On): Maximum 4mOhm specification (lower values acceptable)
• Gate Threshold Voltage (Vgs(th)): Maximum 4V (equal or lower acceptable)
• Power Dissipation: Minimum 55W (higher values acceptable)

All substitute parts listed maintain compliance with RoHS3 and REACH requirements, ensuring regulatory equivalence with the original component.

Parameter Comparison

Engineering Selection Recommendations

STP100N6F7 (STMicroelectronics) - Primary Substitute

The STP100N6F7 is an Active product with full electrical parameter specification. It matches the PSMN3R9-60XSQ across all critical parameters: 60V Vdss, N-Channel MOSFET technology, ±20V gate voltage range, -55°C to 175°C operating temperature, and TO-220-3 package. The STP100N6F7 exceeds the original specification with 100A continuous drain current (versus 75A) and 125W power dissipation (versus 55W), providing enhanced thermal and current handling capability. Gate charge is significantly lower at 30nC versus 103nC, reducing driver circuit stress. RoHS3 compliance and REACH unaffected status ensure regulatory equivalence. Inventory availability of 2100 units supports production continuity.

STP130N6F7 (STMicroelectronics) - Secondary Substitute

The STP130N6F7 maintains full electrical compatibility with the PSMN3R9-60XSQ across voltage, current type, and temperature specifications. This Active product provides 80A continuous drain current and 160W power dissipation, exceeding original ratings. The TO-220-3 package ensures mechanical compatibility. Gate charge of 42nC and input capacitance of 2600pF represent intermediate values between the original and STP100N6F7. RoHS3 compliance and REACH unaffected status are confirmed. Inventory of 1470 units is available.

TK58E06N1,S1X (Toshiba Semiconductor) - Tertiary Substitute

The TK58E06N1,S1X is an Active product matching 60V Vdss and N-Channel MOSFET technology. Continuous drain current of 58A falls below the original 75A specification, limiting direct equivalence for applications requiring full 75A operation. Operating temperature range extends to 150°C maximum (versus 175°C), reducing thermal margin. Gate charge of 46nC and power dissipation of 110W are acceptable. TO-220-3 package and RoHS3 compliance are confirmed. This substitute is suitable only for applications operating below 58A continuous current. Inventory of 789 units is available.

IRF2907ZPBF (International Rectifier) - Limited Data Substitute

The IRF2907ZPBF is listed as an Active product but lacks complete electrical parameter specification in the provided data. Vdss, Id, Rds On, Vgs(th), Qg, Ciss, and power dissipation values are not specified. Without full parameter documentation, this part cannot be confirmed as electrically equivalent to the PSMN3R9-60XSQ. Verification against complete IRF2907ZPBF datasheets is required before selection. Inventory of 4263 units is available.

Frequently Asked Questions (FAQ)

Q: Can the STP100N6F7 directly replace the PSMN3R9-60XSQ in existing designs?

A: Yes. The STP100N6F7 matches all critical electrical parameters: 60V Vdss, N-Channel MOSFET technology, ±20V gate voltage, -55°C to 175°C operating range, and TO-220-3 package. The higher current rating (100A versus 75A) and lower gate charge (30nC versus 103nC) are compatible with existing circuits. Thermal performance is improved due to higher power dissipation rating (125W versus 55W).

Q: What is the difference between the STP100N6F7 and STP130N6F7?

A: Both parts are Active STMicroelectronics products with identical voltage and temperature specifications. The STP100N6F7 provides 100A continuous drain current with 125W power dissipation and 30nC gate charge. The STP130N6F7 provides 80A continuous drain current with 160W power dissipation and 42nC gate charge. Selection depends on application current requirements: use STP100N6F7 for higher current applications, STP130N6F7 for higher thermal dissipation requirements.

Q: Why is the TK58E06N1,S1X listed as a substitute if its current rating is lower?

A: The TK58E06N1,S1X is included because it meets all critical electrical specifications (60V Vdss, N-Channel, ±20V gate voltage, TO-220-3 package, RoHS3 compliance). However, its 58A continuous drain current rating is below the original 75A specification. This part is suitable only for applications operating at or below 58A continuous current. Applications requiring the full 75A rating must use STP100N6F7 or STP130N6F7.

Q: Is the IRF2907ZPBF a suitable substitute?

A: The IRF2907ZPBF cannot be confirmed as equivalent based on available data. Critical electrical parameters including Vdss, Id, Rds On, Vgs(th), Qg, Ciss, and power dissipation are not specified in the provided information. Complete IRF2907ZPBF datasheets must be reviewed to verify compatibility with the PSMN3R9-60XSQ before selection.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The STP100N6F7, STP130N6F7, and TK58E06N1,S1X are all confirmed RoHS3 compliant. The IRF2907ZPBF RoHS status is not specified in the provided data. All confirmed substitutes are REACH unaffected.

Q: What is the significance of the TO-220-3 Full Pack Isolated Tab package on the original part?

A: The PSMN3R9-60XSQ uses a TO-220-3 Full Pack with Isolated Tab, providing electrical isolation between the tab and the drain connection. The substitute parts use standard TO-220-3 packages. Verify that your thermal management design does not depend on tab isolation before substitution. If isolation is required, confirm the substitute part's tab configuration with the manufacturer datasheet.

Q: Can I use multiple lower-current parts in parallel to replace the PSMN3R9-60XSQ?

A: Parallel operation of MOSFETs requires careful circuit design to ensure current sharing and thermal balance. This approach is not recommended as a direct substitution strategy. Use the STP100N6F7 or STP130N6F7 as single-device replacements to maintain design simplicity and reliability.

Q: What inventory levels are available for each substitute?

A: STP100N6F7: 2100 units; STP130N6F7: 1470 units; TK58E06N1,S1X: 789 units; IRF2907ZPBF: 4263 units. Verify current availability with your supplier before finalizing procurement decisions.