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PSMN3R8-30LL,115 N-Channel MOSFET 30V 40A Equivalent & Substitute Parts
Part Overview
The PSMN3R8-30LL,115 is an N-Channel 30V 40A surface mount MOSFET manufactured by NXP USA Inc., housed in an 8-DFN3333 (3.3x3.3) package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing production and design continuity. The part delivers 69W maximum power dissipation at case temperature and operates across the industrial temperature range of -55°C to 150°C. Due to its obsolete status, alternative N-Channel MOSFETs with compatible electrical and mechanical specifications are required for new procurement and design updates.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 40 | A (Tc) |
| RDS(on) Max @ 10A, 10V | 3.7 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 1mA | 2.15 | V |
| Gate Charge (Qg) @ 10V | 38 | nC |
| Input Capacitance (Ciss) @ 15V | 2085 | pF |
| Power Dissipation Max | 69 | W (Tc) |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | 8-DFN3333 (3.3x3.3) | Surface Mount |
| RoHS Status | ROHS3 Compliant | |
| Moisture Sensitivity Level | 1 (Unlimited) |
Substitute Part Grouping Explanation
Substitution of the PSMN3R8-30LL,115 is determined by strict alignment of the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): Must equal 30V
- Continuous Drain Current (Id) @ 25°C: Must support minimum 40A at case temperature (Tc)
- RDS(on) characteristics: Must not exceed specified maximum values at rated conditions
- Gate Threshold Voltage: Must fall within compatible operating range
- Package Type: Surface mount 8-pin configurations with exposed pad (DFN, PQFN, WDFN variants acceptable)
- Temperature Range: Must support -55°C to 150°C minimum
- Compliance: ROHS3 compliant, MSL 1 rating
Substitute Parts Identified:
- AON7508 (Alpha & Omega Semiconductor) – Active status, 30V/32A(Tc), 8-DFN-EP package
- IRFHM830TRPBF (Infineon Technologies) – Active status, 30V/40A(Tc), 8-PQFN-Dual package
- IRLHM630TRPBF (Infineon Technologies) – Active status, 30V/40A(Tc), PQFN package
- NTTFS4965NFTAG (onsemi) – Active status, 30V/64A(Tc), 8-WDFN package
- NTTFS4965NFTWG (onsemi) – Active status, 30V/64A(Tc), 8-WDFN package
- PSMN3R0-30MLC,115 (Nexperia USA Inc.) – Active status, 30V/70A(Tc), LFPAK33 package
All substitute parts maintain 30V Vdss rating and support continuous drain current at or above 40A at case temperature, ensuring functional compatibility with the original design specification.
Parameter Comparison
| Parameter | PSMN3R8-30LL,115 | AON7508 | IRFHM830TRPBF | IRLHM630TRPBF | NTTFS4965NFTAG | NTTFS4965NFTWG | PSMN3R0-30MLC,115 |
|---|---|---|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | Alpha & Omega Semiconductor Inc. | Infineon Technologies | Infineon Technologies | onsemi | onsemi | Nexperia USA Inc. |
| Vdss (V) | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C (A, Tc) | 40 | 32 | 40 | 40 | 64 | 64 | 70 |
| RDS(on) Max (mOhm) | 3.7 @ 10A, 10V | 3.0 @ 20A, 10V | 3.8 @ 20A, 10V | 3.5 @ 20A, 4.5V | 3.5 @ 20A, 10V | 3.5 @ 20A, 10V | 3.15 @ 25A, 10V |
| Vgs(th) Max (V) | 2.15 @ 1mA | 2.2 @ 250µA | 2.35 @ 50µA | 1.1 @ 50µA | 2.3 @ 250µA | 2.3 @ 250µA | 2.15 @ 1mA |
| Qg Max (nC) | 38 @ 10V | 40 @ 10V | 31 @ 10V | 62 @ 4.5V | 29.4 @ 10V | 29.4 @ 10V | 34.8 @ 10V |
| Ciss Max (pF) | 2085 @ 15V | 1835 @ 15V | 2155 @ 25V | 3170 @ 25V | 2075 @ 15V | 2075 @ 15V | 2330 @ 15V |
| Power Dissipation Max (W, Tc) | 69 | 62.5 | 37 | 37 | Not specified | Not specified | 88 |
| Operating Temperature (°C) | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | Not specified | Not specified | -55 to 175 |
| Package Type | 8-DFN3333 (3.3x3.3) | 8-DFN-EP (3x3) | 8-PQFN-Dual (3.3x3.3) | PQFN (3x3) | 8-WDFN (3.3x3.3) | 8-WDFN (3.3x3.3) | LFPAK33 |
| Product Status | Obsolete | Not For New Designs | Active | Active | Active | Active | Active |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
For Active Production and New Designs:
The IRFHM830TRPBF and IRLHM630TRPBF (Infineon Technologies HEXFET® series) are recommended as primary substitutes. Both parts maintain Active product status, ensuring long-term availability and supply chain stability. These devices deliver 40A continuous drain current at case temperature, matching the original specification exactly. Both are ROHS3 compliant with MSL 1 rating, meeting environmental and moisture sensitivity requirements.
The NTTFS4965NFTAG and NTTFS4965NFTWG (onsemi) offer superior current handling at 64A(Tc), providing design margin for thermal management. Both maintain Active status and full compliance certifications. These parts are suitable for applications requiring higher current capacity within the same 30V voltage class.
The PSMN3R0-30MLC,115 (Nexperia USA Inc.) provides the highest current rating at 70A(Tc) and extends the operating temperature range to 175°C, offering enhanced thermal performance. This part is Active and fully compliant, making it suitable for demanding thermal environments.
For Existing Inventory Management:
The AON7508 (Alpha & Omega Semiconductor) carries Not For New Designs status, limiting its use to legacy system support and existing production runs. While electrically compatible at 30V/32A(Tc), this part should not be selected for new design initiatives.
Package Compatibility Considerations:
The original PSMN3R8-30LL,115 uses an 8-DFN3333 (3.3x3.3) package. Substitute parts employ similar surface mount packages (8-DFN-EP, 8-PQFN-Dual, PQFN, 8-WDFN, LFPAK33) with comparable footprints and thermal characteristics. PCB layout verification is required when transitioning between package variants, particularly for thermal pad sizing and via placement.
Frequently Asked Questions (FAQ)
Q1: Can the IRFHM830TRPBF directly replace the PSMN3R8-30LL,115 without PCB modifications?
A: The IRFHM830TRPBF maintains identical electrical specifications (30V, 40A continuous drain current) and operates within the same temperature range (-55°C to 150°C). However, the package transitions from 8-DFN3333 to 8-PQFN-Dual. While both are 3.3x3.3mm surface mount packages with exposed pads, PCB footprint verification is required. Pin assignments and thermal pad configurations may differ, necessitating layout review before implementation.
Q2: Why is the PSMN3R0-30MLC,115 rated for 70A when the original part is 40A?
A: The PSMN3R0-30MLC,115 is a higher-performance variant within the same voltage class (30V). The increased current rating reflects improved die design and thermal management. This part is suitable as a substitute when the application can accommodate the LFPAK33 package footprint. The higher current rating provides design margin but does not require circuit modifications if the original design operated at 40A.
Q3: What is the significance of the "Not For New Designs" status on the AON7508?
A: Parts designated "Not For New Designs" indicate that the manufacturer is discontinuing active development and support. While the AON7508 remains electrically compatible, it should only be used for sustaining existing production or legacy system support. For new product development, select from Active-status alternatives such as IRFHM830TRPBF, IRLHM630TRPBF, or NTTFS4965 variants.
Q4: Are all substitute parts ROHS3 compliant and MSL 1 rated?
A: Yes. All identified substitute parts maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original PSMN3R8-30LL,115 specifications. This ensures compatibility with environmental regulations and standard handling procedures without additional moisture control requirements.
Q5: How do gate charge differences affect circuit performance?
A: Gate charge (Qg) values range from 29.4nC (NTTFS4965 variants) to 62nC (IRLHM630TRPBF). Lower gate charge reduces driver power dissipation and switching losses in high-frequency applications. Higher gate charge may require stronger gate drive circuits. The original part specifies 38nC at 10V. Substitutes with similar or lower Qg values (IRFHM830TRPBF at 31nC, NTTFS4965 at 29.4nC) offer improved efficiency. The IRLHM630TRPBF at 62nC requires gate drive circuit evaluation for compatibility.
Q6: What package considerations apply when selecting between DFN, PQFN, WDFN, and LFPAK variants?
A: All substitute packages are surface mount with exposed thermal pads, suitable for standard reflow soldering. DFN and PQFN variants (3x3 or 3.3x3.3mm) maintain compact footprints comparable to the original. WDFN packages offer similar dimensions with enhanced thermal performance. LFPAK33 is larger (5-lead configuration) but provides superior thermal dissipation for high-power applications. PCB layout, thermal via placement, and copper area allocation must be verified for each package transition.
Q7: Can the NTTFS4965 variants be used in applications originally designed for 40A operation?
A: Yes. The NTTFS4965NFTAG and NTTFS4965NFTWG are rated for 64A continuous drain current at case temperature, exceeding the original 40A specification. These parts are electrically and mechanically compatible substitutes. The higher current rating provides thermal margin and design flexibility without requiring circuit modifications. Verify that the 8-WDFN (3.3x3.3) package footprint is compatible with existing PCB layouts.
Q8: What compliance certifications are maintained across all substitute parts?
A: All substitute parts maintain ROHS3 compliance, REACH Unaffected status, and ECCN EAR99 classification, matching the original part's regulatory profile. MSL 1 (Unlimited) moisture sensitivity rating is consistent across all alternatives, eliminating special handling requirements. These certifications ensure seamless integration into existing supply chain and manufacturing processes.
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