PSMN2R7-30PL,127 N-Channel 30V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN2R7-30PL,127 is an N-Channel 30V 100A MOSFET manufactured by Nexperia USA Inc. in a Through Hole TO-220AB package. This device is rated for 170W power dissipation and operates across a temperature range of -55°C to 175°C. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substitution is required when the original part becomes unavailable or when design requirements necessitate alternative components with compatible electrical and mechanical characteristics. All substitute parts listed maintain the same drain-source voltage rating, package type compatibility, and thermal operating range.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	100	A
Rds On (Max) @ 15A, 10V	2.7	mOhm
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution eligibility for the PSMN2R7-30PL,127 is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 or TO-220AB (mechanically compatible)
Operating Temperature Range: Minimum -55°C to 175°C

Performance Considerations:

Continuous Drain Current (Id): Substitute parts must support the application's current requirements
Rds On (Max): Lower on-resistance values indicate improved performance
Power Dissipation (Max): Must be adequate for thermal management in the application
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Vgs(th) and Vgs (Max): Must be compatible with gate drive voltage levels

All substitute parts listed maintain the 30V Vdss rating and TO-220 package family compatibility. Variations in continuous drain current, on-resistance, and power dissipation reflect different device optimization approaches while preserving core electrical compatibility.

Parameter Comparison

Parameter	PSMN2R7-30PL,127	FDP8030L	IPP80N03S4L03AKSA1	IRF3703PBF	IRLB4132PBF	IRLB8314PBF	IRLB8743PBF
Manufacturer	Nexperia USA Inc.	Fairchild Semiconductor	Infineon Technologies	International Rectifier	Infineon Technologies	Infineon Technologies	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	100	80	80	210	78	171	78
Rds On (Max) (mOhm)	2.7 @ 15A, 10V	3.5 @ 80A, 10V	2.7 @ 80A, 10V	2.8 @ 76A, 10V	3.5 @ 40A, 10V	2.4 @ 68A, 10V	3.2 @ 40A, 10V
Power Dissipation (Max) (W)	170	187	136	230	140	125	140
Operating Temperature (°C)	-55 to 175	-65 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Vgs (Max) (V)	±20	±20	±16	±20	±20	±20	±20
Gate Charge (Qg) (nC)	66 @ 10V	170 @ 5V	140 @ 10V	209 @ 10V	54 @ 4.5V	60 @ 4.5V	54 @ 4.5V
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	—	ROHS3 Compliant	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes for Direct Replacement:

The IRLB8314PBF and IPP80N03S4L03AKSA1 are the most suitable direct substitutes for the PSMN2R7-30PL,127. Both devices maintain active product status, ROHS3 compliance, and equivalent operating temperature ranges. The IRLB8314PBF offers superior continuous drain current (171A) and lower on-resistance (2.4 mOhm), providing enhanced performance headroom. The IPP80N03S4L03AKSA1 matches the on-resistance specification (2.7 mOhm) while delivering 80A continuous current and maintains Infineon's OptiMOS™ series optimization.

Secondary Substitutes:

The FDP8030L (Fairchild Semiconductor) and IRLB8743PBF (Infineon Technologies) are suitable alternatives when current requirements are lower. Both support 78-80A continuous drain current and maintain the 30V Vdss rating. The FDP8030L extends the operating temperature range to -65°C, providing additional thermal margin in cold environments.

High-Performance Alternative:

The IRF3703PBF offers significantly higher continuous drain current (210A) and power dissipation (230W), making it suitable for applications requiring enhanced current handling. This device is appropriate when design margins or future scaling necessitate higher current capacity.

Compliance Considerations:

All recommended substitutes maintain ROHS3 compliance and operate within the -55°C to 175°C temperature range. The IRLB8314PBF, IPP80N03S4L03AKSA1, IRLB4132PBF, and IRLB8743PBF carry explicit ROHS3 certification. Selection should prioritize active product status to ensure long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the IRLB8314PBF directly replace the PSMN2R7-30PL,127 in existing designs?

A: Yes. The IRLB8314PBF maintains the same 30V Vdss rating, TO-220-3 package, and operating temperature range (-55°C to 175°C). The device offers superior continuous drain current (171A versus 100A) and lower on-resistance (2.4 mOhm versus 2.7 mOhm), making it a performance-enhanced substitute. Gate drive circuits require no modification as Vgs (Max) remains ±20V.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both designations refer to the same three-lead Through Hole package format. TO-220AB and TO-220-3 are equivalent mechanical packages with identical pin configurations and thermal characteristics. Devices specified as either package type are mechanically interchangeable.

Q: Why does the IPP80N03S4L03AKSA1 specify a lower Vgs (Max) of ±16V compared to the original ±20V?

A: The IPP80N03S4L03AKSA1 is rated for ±16V maximum gate-source voltage, which is within the typical gate drive voltage range of most applications. If the design applies gate voltages exceeding ±16V, this device is not suitable. Verify gate drive circuit specifications before selection.

Q: How does gate charge (Qg) affect device selection?

A: Gate charge determines the energy required to switch the device and influences switching speed. The PSMN2R7-30PL,127 specifies 66 nC @ 10V. Substitute parts with lower gate charge (IRLB4132PBF and IRLB8743PBF at 54 nC) enable faster switching and reduced drive circuit power dissipation. Higher gate charge values (FDP8030L at 170 nC) require more robust gate drive circuits but do not prevent substitution.

Q: Is the FDP8030L suitable for applications requiring the full 100A continuous current of the original part?

A: No. The FDP8030L is rated for 80A continuous drain current, which is 20% lower than the PSMN2R7-30PL,127. This device is suitable only for applications where the actual operating current does not exceed 80A. For designs requiring 100A or higher, select the IRLB8314PBF (171A) or IRF3703PBF (210A).

Q: What is the significance of product status (Active versus Obsolete)?

A: Active product status indicates ongoing manufacturing and supply availability. The PSMN2R7-30PL,127 is obsolete, meaning production has ceased and existing inventory is limited. All recommended substitutes carry active status, ensuring long-term procurement viability and design continuity.

Q: Can the IRF3703PBF be used in applications designed for 100A operation?

A: Yes. The IRF3703PBF is rated for 210A continuous drain current, providing 110% additional capacity beyond the original 100A specification. This device is suitable for any application within the 100A requirement and offers performance margin for future design scaling or thermal stress conditions.

Q: Are there thermal management differences between substitute parts?

A: Yes. Power dissipation ratings vary: PSMN2R7-30PL,127 (170W), FDP8030L (187W), IPP80N03S4L03AKSA1 (136W), IRF3703PBF (230W), IRLB4132PBF (140W), IRLB8314PBF (125W), and IRLB8743PBF (140W). Lower on-resistance values reduce conduction losses. Verify thermal design calculations for the selected substitute to ensure adequate heat dissipation in the application's thermal environment.

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