PSMN2R2-40PS,127 Equivalent & Substitute Parts

Part Overview

The PSMN2R2-40PS,127 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 40V drain-to-source voltage and 100A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part delivers 306W maximum power dissipation and operates across the temperature range of -55°C to 175°C (TJ).

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	100	A (Tc)
Rds On (Max) @ Id, Vgs	2.1	mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs	130	nC @ 10V
Power Dissipation (Max)	306	W (Tc)
Operating Temperature	-55 to 175	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the PSMN2R2-40PS,127 is determined by the following critical parameters:

Mandatory Matching Criteria:

FET Type: N-Channel
Drain to Source Voltage (Vdss): 40V
Mounting Type: Through Hole
Package / Case: TO-220-3 or TO-220AB (mechanically compatible)
Operating Temperature Range: -55°C to 175°C (TJ)

Performance Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 100A (Tc)
Rds On (Max): Equal to or lower than 2.1 mOhm (at comparable conditions)
Gate Charge (Qg): Comparable to 130 nC for switching performance
Power Dissipation (Max): Equal to or greater than 306W (Tc)

Substitute parts are grouped into two categories: Direct Equivalents (matching all key parameters within tight tolerances) and Functional Alternatives (meeting or exceeding performance specifications with acceptable trade-offs in secondary parameters).

Parameter Comparison

Parameter	PSMN2R2-40PS,127	FDP8441	IPP015N04NGXKSA1	IPP023N04NGXKSA1	IPP039N04LGXKSA1	IPP041N04NGXKSA1	IRF1104PBF	IRF1404PBF	IRF1404ZPBF	IRF2204PBF	IRF2804PBF
Manufacturer	Nexperia USA Inc.	Fairchild Semiconductor	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	40	40	40	40	40	40	40	40	40	40	40
Id @ 25°C (A)	100 (Tc)	80 (Tc)	120 (Tc)	90 (Tc)	80 (Tc)	80 (Tc)	100 (Tc)	202 (Tc)	180 (Tc)	210 (Tc)	75 (Tc)
Rds On (Max) (mOhm)	2.1 @ 25A, 10V	2.7 @ 80A, 10V	1.5 @ 100A, 10V	2.3 @ 90A, 10V	3.9 @ 80A, 10V	4.1 @ 80A, 10V	9.0 @ 60A, 10V	4.0 @ 121A, 10V	3.7 @ 75A, 10V	3.6 @ 130A, 10V	2.3 @ 75A, 10V
Qg (Max) (nC)	130 @ 10V	280 @ 10V	250 @ 10V	120 @ 10V	78 @ 10V	56 @ 10V	93 @ 10V	196 @ 10V	150 @ 10V	200 @ 10V	240 @ 10V
Power Dissipation (Max) (W)	306 (Tc)	300 (Tc)	250 (Tc)	167 (Tc)	94 (Tc)	94 (Tc)	170 (Tc)	333 (Tc)	200 (Tc)	330 (Tc)	300 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active	Not For New Designs	Active	Active	Not For New Designs	Active	Active	Active
RoHS Status	ROHS3 Compliant	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 - Direct Equivalents (Recommended for New Designs):

IRF1104PBF (Infineon Technologies) is the closest functional equivalent. It matches the PSMN2R2-40PS,127 in Vdss (40V), Id (100A Tc), and package (TO-220AB/TO-220-3). The IRF1104PBF carries Active product status and ROHS3 compliance. The primary trade-off is higher Rds On (9.0 mOhm vs. 2.1 mOhm), which results in increased power dissipation in high-current applications. Power dissipation is rated at 170W (Tc), lower than the original 306W.

IPP015N04NGXKSA1 (Infineon Technologies, OptiMOS™ series) exceeds the original specifications with 120A continuous drain current and superior Rds On of 1.5 mOhm @ 100A, 10V. This part is Active and ROHS3 compliant. Power dissipation is 250W (Tc), which is lower than the original but sufficient for most applications. Gate charge is 250 nC, higher than the original 130 nC.

Tier 2 - Functional Alternatives (Performance Trade-offs):

IRF1404ZPBF (Infineon Technologies, HEXFET® series) provides higher current capability (180A Tc) with improved Rds On (3.7 mOhm @ 75A, 10V) and Active product status. Power dissipation is 200W (Tc). This part is suitable for applications requiring higher current headroom.

IRF2204PBF (Infineon Technologies, HEXFET® series) delivers the highest current rating (210A Tc) with excellent Rds On (3.6 mOhm @ 130A, 10V) and Active product status. Power dissipation is 330W (Tc), exceeding the original specification. This part is optimal for high-current, high-power applications.

FDP8441 (Fairchild Semiconductor, PowerTrench® series) provides near-equivalent performance with 80A continuous drain current (lower than original), Rds On of 2.7 mOhm @ 80A, 10V, and Active product status. Power dissipation is 300W (Tc). This part is suitable for applications with reduced current requirements.

Tier 3 - Limited Substitution (Not Recommended for New Designs):

IPP039N04LGXKSA1 (Infineon Technologies) carries Not For New Designs status and is not recommended for new circuit implementations.

IRF1404PBF (Infineon Technologies) carries Not For New Designs status and is not recommended for new circuit implementations.

Compliance and Certification: All recommended substitute parts (Tier 1 and Tier 2) are ROHS3 compliant and carry REACH Unaffected status, matching the original part's regulatory compliance profile.

Frequently Asked Questions (FAQ)

Q: Can I directly replace PSMN2R2-40PS,127 with IRF1104PBF without circuit modifications?

A: IRF1104PBF is mechanically and electrically compatible in terms of pinout and voltage rating (both 40V, 100A, TO-220AB package). However, the higher Rds On (9.0 mOhm vs. 2.1 mOhm) results in greater power dissipation. Thermal management and current distribution must be re-evaluated. Gate charge is lower (93 nC vs. 130 nC), which may improve switching speed in some applications.

Q: What is the primary difference between IPP015N04NGXKSA1 and PSMN2R2-40PS,127?

A: Both are 40V N-Channel MOSFETs in TO-220-3 packages. IPP015N04NGXKSA1 offers superior Rds On (1.5 mOhm vs. 2.1 mOhm) and higher current capability (120A vs. 100A). Gate charge is higher (250 nC vs. 130 nC), which may increase switching losses. Power dissipation is lower (250W vs. 306W).

Q: Why do some substitute parts have higher current ratings than the original?

A: Higher current ratings reflect improved semiconductor technology and die design. Parts such as IRF2204PBF (210A) and IRF1404ZPBF (180A) provide additional design margin and are suitable for applications requiring higher current capacity or redundancy.

Q: Is FDP8441 a suitable replacement for lower-current applications?

A: FDP8441 is suitable for applications where continuous drain current does not exceed 80A (Tc). It provides comparable Rds On (2.7 mOhm vs. 2.1 mOhm) and power dissipation (300W vs. 306W). Gate charge is significantly higher (280 nC vs. 130 nC), which increases switching losses.

Q: What is the significance of product status (Active vs. Not For New Designs)?

A: Active status indicates the manufacturer continues to produce and support the part for new designs. Not For New Designs status indicates the part is in production but not recommended for new circuit implementations; existing inventory may be available, but long-term supply is not guaranteed. Obsolete status indicates the part is no longer manufactured.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitute parts in Tier 1 and Tier 2 are ROHS3 compliant and REACH unaffected, matching the original part's regulatory compliance. FDP8441 compliance status is not specified in the provided data.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (e.g., IPP041N04NGXKSA1 at 56 nC) reduces switching losses and allows faster switching speeds. Higher gate charge (e.g., FDP8441 at 280 nC) increases switching losses and may require higher gate drive current.

Q: Can I use IPP039N04LGXKSA1 or IRF1404PBF in new designs?

A: Both parts carry Not For New Designs status and are not recommended for new circuit implementations. Use Active-status alternatives such as IPP041N04NGXKSA1, IRF1104PBF, or IRF1404ZPBF instead.

Q: What thermal considerations apply when substituting with higher Rds On parts?

A: Parts with higher Rds On (such as IRF1104PBF at 9.0 mOhm) generate more heat at the same current level. Thermal management must account for increased power dissipation: P = I²R. Heatsink size and thermal interface materials may require adjustment to maintain acceptable junction temperatures.

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