PSMN2R0-30YL,115 N-Channel 30V 100A MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN2R0-30YL,115 is an N-Channel 30V 100A MOSFET manufactured by Nexperia USA Inc., housed in the LFPAK56 (Power-SO8) surface mount package. This device is part of the TrenchMOS™ series and is rated for 97W maximum power dissipation at the case temperature. The part carries a "Not For New Designs" product status, indicating that while it remains available in inventory (12,400 pieces), Nexperia has discontinued active development and support for this model. Identifying equivalent and substitute parts is necessary for design continuity, long-term supply chain management, and transition to actively supported alternatives.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	100	A (Tc)
On-State Resistance (Rds On Max) @ 15A, 10V	2	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	2.15	V
Gate Charge (Qg Max) @ 10V	64	nC
Input Capacitance (Ciss Max) @ 12V	3980	pF
Power Dissipation (Max)	97	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	LFPAK56, Power-SO8	SC-100, SOT-669
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the PSMN2R0-30YL,115 is determined by the following critical parameters:

Voltage Rating Requirement: All substitute parts must maintain the 30V Drain to Source Voltage (Vdss) specification to ensure safe operation within the same circuit topology.

Current Handling Capability: The original part delivers 100A continuous drain current. Substitute parts are grouped by their current ratings, with lower-current alternatives suitable for applications requiring reduced current capacity. Parts with 50A, 60A, or 45A ratings represent downgrades in current capability and are applicable only when circuit design permits reduced current handling.

On-State Resistance (Rds On): The PSMN2R0-30YL,115 exhibits 2mOhm maximum on-state resistance at 15A and 10V gate voltage. Substitute parts with higher Rds On values (3.1mOhm to 8.2mOhm) result in increased power dissipation and heat generation, requiring thermal design verification.

Package Compatibility: All identified substitutes use the LFPAK (SC-100, SOT-669) package family, maintaining mechanical and thermal interface compatibility with the original part.

Product Status: Substitute parts from Renesas Electronics Corporation (HAT series) carry "Active" product status, ensuring ongoing manufacturer support, availability, and design continuity.

Compliance and Certifications: All parts maintain RoHS3 compliance, MSL Level 1 (Unlimited moisture sensitivity), and REACH Unaffected status, ensuring regulatory alignment.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Power Dissipation Max (W)	Tj Max (°C)	Product Status
PSMN2R0-30YL,115	Nexperia USA Inc.	30	100 (Tc)	2.0 @ 15A, 10V	64 @ 10V	3980 @ 12V	97 (Tc)	175	Not For New Designs
HAT2099H-EL-E	Renesas Electronics	30	50 (Ta)	3.7 @ 25A, 10V	75 @ 10V	4750 @ 10V	30 (Tc)	150	Active
HAT2116H-EL-E	Renesas Electronics	30	30 (Ta)	8.2 @ 15A, 10V	26 @ 10V	1650 @ 10V	15 (Tc)	150	Active
HAT2143H-EL-E	Renesas Electronics	30	40 (Ta)	6.1 @ 20A, 10V	40 @ 10V	2450 @ 10V	20 (Tc)	150	Active
HAT2164H-EL-E	Renesas Electronics	30	60 (Ta)	3.1 @ 30A, 10V	50 @ 4.5V	7600 @ 10V	30 (Tc)	150	Active
HAT2166H-EL-E	Renesas Electronics	30	45 (Ta)	3.8 @ 22.5A, 10V	27 @ 4.5V	4400 @ 10V	25 (Tc)	150	Active
HAT2168H-EL-E	Renesas Electronics	30	30 (Ta)	7.9 @ 15A, 10V	11 @ 4.5V	1730 @ 10V	15 (Tc)	150	Active

Engineering Selection Recommendations

Primary Consideration: Product Status Transition

The PSMN2R0-30YL,115 carries "Not For New Designs" status from Nexperia, indicating end-of-life trajectory. All identified Renesas HAT series substitutes maintain "Active" product status, ensuring manufacturer support and long-term availability. For new designs or production continuity beyond current inventory depletion, selection from the HAT series is required.

Current Rating Alignment

The original part delivers 100A continuous drain current. No substitute part in the identified list matches this current rating. Selection of a substitute requires circuit design verification to confirm that reduced current capacity (30A to 60A range) is acceptable for the application. The HAT2164H-EL-E (60A) represents the highest current alternative and is the closest match to the original specification.

Thermal Performance Assessment

The PSMN2R0-30YL,115 dissipates 97W maximum at case temperature. Substitute parts range from 15W to 30W maximum dissipation. Lower power dissipation in substitute parts reflects reduced current handling and higher on-state resistance. Thermal design must account for increased junction temperature rise in lower-rated alternatives, particularly in high-current or high-frequency switching applications.

Operating Temperature Range

The original part operates from -55°C to 175°C junction temperature. All Renesas substitutes operate to 150°C maximum junction temperature, representing a 25°C reduction in upper temperature limit. Applications requiring operation above 150°C junction temperature cannot use these substitutes.

Compliance and Regulatory Alignment

All substitute parts maintain RoHS3 compliance, MSL Level 1 (Unlimited), and REACH Unaffected status, matching the regulatory profile of the original part. No compliance barriers exist for substitution.

Package and Mechanical Compatibility

All substitute parts use the LFPAK (SC-100, SOT-669) package family, ensuring direct mechanical and thermal interface compatibility with existing PCB layouts and thermal management solutions designed for the PSMN2R0-30YL,115.

Frequently Asked Questions (FAQ)

Q: Can the HAT2164H-EL-E (60A) directly replace the PSMN2R0-30YL,115 (100A) in my application?

A: Direct replacement is possible only if your circuit design operates at or below 60A continuous drain current. The HAT2164H-EL-E maintains the same 30V voltage rating and LFPAK package, but delivers 40% less current capacity. Verify that your application's maximum current demand does not exceed 60A. Additionally, the HAT2164H-EL-E exhibits 3.1mOhm on-state resistance compared to 2.0mOhm in the original part, resulting in increased power dissipation at equivalent current levels.

Q: What is the difference between the HAT2116H-EL-E and HAT2168H-EL-E? Both are rated at 30A.

A: Both parts are rated at 30A continuous drain current and 30V voltage rating, but differ in on-state resistance and gate charge characteristics. The HAT2116H-EL-E exhibits 8.2mOhm on-state resistance and 26nC gate charge, while the HAT2168H-EL-E exhibits 7.9mOhm on-state resistance and 11nC gate charge. The HAT2168H-EL-E has lower gate charge, resulting in faster switching response and reduced gate drive power requirements. Selection depends on whether gate drive speed or on-state conduction loss is the primary design constraint.

Q: Why do all substitute parts have lower maximum junction temperature (150°C) compared to the original part (175°C)?

A: The Renesas HAT series substitutes are designed with a 150°C maximum junction temperature specification. This represents a design choice by the manufacturer and is not a limitation of the LFPAK package itself. Applications requiring operation above 150°C junction temperature cannot use these substitutes and require alternative solutions from other manufacturers or higher-voltage-rated devices with different thermal characteristics.

Q: Is the LFPAK package identical across all parts listed?

A: All parts use the LFPAK package family (SC-100, SOT-669 designation), ensuring mechanical compatibility and identical PCB footprint. However, thermal performance varies based on die size and power dissipation rating. The original PSMN2R0-30YL,115 (97W) has a larger die than lower-rated substitutes (15W to 30W), resulting in different thermal resistance characteristics. Thermal interface design (solder pad area, thermal vias, heatsinking) may require adjustment when substituting to lower-power-rated parts.

Q: Can I use multiple lower-current parts in parallel to achieve 100A capacity?

A: Parallel operation of MOSFETs is possible but requires careful design consideration of gate drive distribution, current sharing, and thermal management. This approach is outside the scope of direct part substitution and requires detailed circuit analysis. Consult application notes from the device manufacturer for parallel MOSFET design guidelines.

Q: What is the significance of the "Ta" versus "Tc" notation in current ratings?

A: "Ta" denotes current rating at ambient temperature (typically 25°C ambient), while "Tc" denotes current rating at case temperature (typically 25°C case temperature). The original PSMN2R0-30YL,115 specifies 100A at Tc (case temperature), while Renesas substitutes specify current at Ta (ambient temperature). This difference reflects different measurement standards but does not affect practical substitution decisions when thermal design is properly verified.

Q: Are there any gate drive voltage differences between the original and substitute parts?

A: All parts specify maximum gate-source voltage (Vgs Max) of ±20V and drive voltage ranges of 4.5V to 10V for maximum on-state resistance specification. Gate drive circuits designed for the PSMN2R0-30YL,115 are directly compatible with all identified substitutes without modification.

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