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PSMN040-200W,127 N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The PSMN040-200W,127 is an N-Channel MOSFET manufactured by NXP USA Inc., rated for 200V drain-to-source voltage and 50A continuous drain current in a Through Hole TO-247-3 package. This device belongs to the TrenchMOS™ series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating package variations.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 200 | V |
| Current - Continuous Drain (Id) @ 25°C | 50 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 40 | mOhm @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 183 | nC @ 10V |
| Power Dissipation (Max) | 300 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package / Case | TO-247-3 | — |
| Mounting Type | Through Hole | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution logic for the PSMN040-200W,127 is based on the following critical parameters:
Electrical Compatibility Requirements:
- Drain to Source Voltage (Vdss): Must equal or exceed 200V
- Continuous Drain Current (Id): Must equal or exceed 50A at 25°C
- Rds On (Max): Must not exceed 40mOhm at specified gate voltage
- Gate Charge (Qg): Lower values indicate faster switching; values up to 234 nC are acceptable
- Vgs(th) (Max): Must not exceed 4V @ specified test current
- Vgs (Max): Must equal ±20V
Thermal and Mechanical Compatibility:
- Power Dissipation: Must support minimum 300W (Tc)
- Operating Temperature: Must support -55°C to 175°C range or equivalent
- Package: TO-247-3 or compatible TO-247 variants (TO-247AC, TO-247AD)
- Mounting: Through Hole configuration required
Compliance Requirements:
- RoHS3 Compliant
- Moisture Sensitivity Level: 1 (Unlimited)
Substitute parts are grouped into two categories: Direct Equivalents (IRFP260MPBF, IRFP260NPBF) and Enhanced Performance Alternatives (IXFH70N20Q3, STW75NF20). Direct equivalents maintain identical electrical ratings. Enhanced alternatives exceed the minimum current or power specifications while maintaining voltage and thermal compatibility.
Parameter Comparison
| Parameter | PSMN040-200W,127 (NXP) | IRFP260MPBF (Infineon) | IRFP260NPBF (Infineon) | IXFH70N20Q3 (IXYS) | STW75NF20 (STMicroelectronics) |
|---|---|---|---|---|---|
| Manufacturer | NXP USA Inc. | Infineon Technologies | Infineon Technologies | IXYS | STMicroelectronics |
| Product Status | Obsolete | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Vdss | 200V | 200V | 200V | 200V | 200V |
| Id @ 25°C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 70A (Tc) | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 10V | 40mOhm @ 28A, 10V | 40mOhm @ 28A, 10V | 40mOhm @ 35A, 10V | 34mOhm @ 37A, 10V |
| Qg (Max) @ Vgs | 183 nC @ 10V | 234 nC @ 10V | 234 nC @ 10V | 67 nC @ 10V | 84 nC @ 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 250µA | 4V @ 250µA | 6.5V @ 4mA | 4V @ 250µA |
| Ciss (Max) @ Vds | 9530 pF @ 25V | 4057 pF @ 25V | 4057 pF @ 25V | 3150 pF @ 25V | 3260 pF @ 25V |
| Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 300W (Tc) | 690W (Tc) | 190W (Tc) |
| Operating Temperature | -55°C to 175°C (TJ) | -55°C to 175°C (TJ) | -55°C to 175°C (TJ) | -55°C to 150°C (TJ) | -50°C to 150°C (TJ) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
Engineering Selection Recommendations
Direct Equivalents (Recommended for Pin-Compatible Replacement):
The IRFP260MPBF and IRFP260NPBF from Infineon Technologies are direct electrical and mechanical equivalents to the PSMN040-200W,127. Both devices are Active products with identical voltage (200V), current (50A), and power dissipation (300W) ratings. The primary difference between these two Infineon parts is packaging format (both supplied in Tube). Both maintain full RoHS3 compliance and MSL 1 rating. The Infineon HEXFET® series devices feature lower input capacitance (4057 pF vs. 9530 pF), which results in improved switching performance. These parts are suitable for direct substitution in existing designs without circuit modification.
Enhanced Performance Alternatives (For Upgraded Specifications):
The IXFH70N20Q3 from IXYS provides enhanced current handling (70A vs. 50A) and significantly higher power dissipation capability (690W vs. 300W). This device is classified as MFR Recommended and is suitable for applications requiring thermal margin or higher current capacity. The IXFH70N20Q3 features substantially lower gate charge (67 nC vs. 183 nC), enabling faster switching transitions. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original part at the upper limit.
The STW75NF20 from STMicroelectronics offers the highest continuous drain current (75A) and features the lowest on-resistance (34mOhm @ 37A, 10V). This device is classified as MFR Recommended. Power dissipation is rated at 190W (Tc), which is lower than the original specification. Operating temperature range is -50°C to 150°C. The STW75NF20 is suitable for high-current applications where on-resistance minimization is critical.
Selection Criteria Based on Product Status and Compliance:
All substitute parts are Active products from established manufacturers with full RoHS3 compliance and REACH Unaffected status. The PSMN040-200W,127 Obsolete status necessitates transition to an Active equivalent. Infineon IRFP260 variants provide the most direct replacement path. IXYS and STMicroelectronics alternatives are appropriate when enhanced thermal or current specifications are required by the application.
Frequently Asked Questions (FAQ)
Q1: Can IRFP260MPBF and IRFP260NPBF be used interchangeably with PSMN040-200W,127?
A: Yes. Both Infineon IRFP260 variants are direct electrical and mechanical equivalents. They maintain identical Vdss (200V), Id (50A), and power dissipation (300W) specifications. Both are supplied in TO-247-3 Through Hole packages and are RoHS3 compliant. The primary advantage is improved switching performance due to lower input capacitance (4057 pF vs. 9530 pF). No circuit redesign is required.
Q2: What is the difference between IRFP260MPBF and IRFP260NPBF?
A: Both devices are electrically identical. The difference is in packaging format: IRFP260MPBF and IRFP260NPBF are both supplied in Tube packaging. Consult the specific supplier datasheet for packaging quantity and reel specifications if bulk procurement is required.
Q3: When should IXFH70N20Q3 be selected instead of the direct equivalent?
A: Select IXFH70N20Q3 when the application requires higher continuous drain current (70A vs. 50A) or significantly higher power dissipation capability (690W vs. 300W). This device is also advantageous for applications requiring faster switching due to lower gate charge (67 nC vs. 183 nC). Note that the upper operating temperature limit is 150°C, which is 25°C lower than the original part.
Q4: What are the advantages of STW75NF20 over the direct equivalent?
A: STW75NF20 provides the highest continuous drain current (75A) and the lowest on-resistance (34mOhm @ 37A, 10V) among all substitutes. This device is optimal for high-current applications where minimizing conduction losses is critical. However, power dissipation is rated at 190W (Tc), which is lower than the original 300W specification. Verify thermal requirements before selection.
Q5: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed (IRFP260MPBF, IRFP260NPBF, IXFH70N20Q3, STW75NF20) are RoHS3 compliant with MSL 1 (Unlimited) rating. All are REACH Unaffected. These certifications match the original PSMN040-200W,127 specifications.
Q6: Can substitute parts be used in existing PCB layouts designed for PSMN040-200W,127?
A: Yes. All substitute parts use TO-247-3 Through Hole package with identical pin configuration and mechanical dimensions. Direct PCB layout compatibility is maintained. No PCB redesign is required for any of the listed substitutes.
Q7: What is the impact of lower input capacitance in Infineon IRFP260 variants?
A: Lower input capacitance (4057 pF vs. 9530 pF) results in faster gate charging and switching transitions. This reduces switching losses and improves overall circuit efficiency. For applications with fixed gate drive circuits, this may result in improved performance without circuit modification.
Q8: Should operating temperature range differences be considered in substitute selection?
A: Yes. IXFH70N20Q3 and STW75NF20 have upper operating temperature limits of 150°C, compared to 175°C for the original part. If the application operates near or above 150°C, verify that the substitute part's thermal rating is adequate. For applications operating below 150°C, this difference is not a limiting factor.
Q9: Are there inventory considerations for substitute part selection?
A: Yes. IRFP260NPBF has the highest inventory availability (65,300 pcs), followed by IRFP260MPBF (40,300 pcs). IXFH70N20Q3 and STW75NF20 have lower inventory levels (2,100 pcs and 1,358 pcs respectively). For high-volume production, Infineon IRFP260 variants offer superior supply chain stability.
Q10: What is the significance of the "MFR Recommended" designation for IXFH70N20Q3 and STW75NF20?
A: The "MFR Recommended" designation indicates that these parts are manufacturer-recommended alternatives for the original PSMN040-200W,127. These devices are suitable for direct substitution while offering enhanced specifications. This designation reflects engineering validation by the substitute part manufacturer.
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