PSMN034-100PS,127 N-Channel 100V 32A MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN034-100PS,127 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Nexperia USA Inc., rated for 100V drain-to-source voltage and 32A continuous drain current at case temperature. The device is housed in a TO-220AB through-hole package and is designed for general-purpose switching and amplification applications requiring moderate current handling at 100V operating levels.

This part is classified as obsolete. Identification of equivalent and substitute components is necessary to support ongoing system maintenance, design updates, and procurement continuity where original inventory becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	32	A (Tc)
On-State Resistance (Rds On) @ 15A, 10V	34.5	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 1mA	4	V
Gate Charge (Qg) @ 10V	23.8	nC
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 50V	1201	pF
Power Dissipation (Max)	86	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the PSMN034-100PS,127 is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a minimum drain-to-source voltage (Vdss) of 100V to ensure safe operation within the original design envelope.

Current Capability: Substitute parts must support a continuous drain current (Id) at case temperature equal to or greater than 32A to maintain functional equivalence in current-handling capacity.

Package Type: All substitute parts must use the TO-220AB or compatible TO-220-3 through-hole package to ensure mechanical and thermal compatibility with existing printed circuit board layouts and heatsinking arrangements.

Operating Temperature Range: Substitute parts must support the full operating temperature range of -55°C to 175°C (junction temperature) to maintain reliability across the intended application environment.

Compliance Standards: All substitute parts must maintain ROHS3 compliance and REACH unaffected status to satisfy regulatory and supply chain requirements.

The following substitute parts meet these criteria and are presented in order of electrical and thermal performance characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	Status
PSMN034-100PS,127	Nexperia USA Inc.	100	32 (Tc)	34.5 @ 15A, 10V	4 @ 1mA	23.8 @ 10V	86 (Tc)	TO-220AB	Obsolete
FDP3682	onsemi	100	32 (Tc)	36 @ 32A, 10V	4 @ 250µA	28 @ 10V	95 (Tc)	TO-220-3	Active
FQP44N10	onsemi	100	43.5 (Tc)	39 @ 21.75A, 10V	4 @ 250µA	62 @ 10V	146 (Tc)	TO-220-3	Obsolete
IRF1310NPBF	Infineon Technologies	100	42 (Tc)	36 @ 22A, 10V	4 @ 250µA	110 @ 10V	160 (Tc)	TO-220AB	Active
IRF540NPBF	Infineon Technologies	100	33 (Tc)	44 @ 16A, 10V	4 @ 250µA	71 @ 10V	130 (Tc)	TO-220AB	Active
IRL540NPBF	Infineon Technologies	100	36 (Tc)	44 @ 18A, 10V	2 @ 250µA	74 @ 5V	140 (Tc)	TO-220AB	Active
STP40NF10	STMicroelectronics	100	50 (Tc)	28 @ 25A, 10V	4 @ 250µA	62 @ 10V	150 (Tc)	TO-220	Active
STP40NF10L	STMicroelectronics	100	40 (Tc)	33 @ 20A, 10V	2.5 @ 250µA	64 @ 5V	150 (Tc)	TO-220	Active

Engineering Selection Recommendations

Direct Equivalent (Highest Compatibility):

The FDP3682 manufactured by onsemi is the closest functional equivalent to the PSMN034-100PS,127. It maintains identical voltage and current ratings (100V, 32A continuous drain current), operates across the same temperature range (-55°C to 175°C), and is housed in the TO-220-3 package. The FDP3682 is currently in active production status, ensuring long-term availability. On-state resistance is marginally higher (36 mOhm versus 34.5 mOhm), representing a 4.3% increase in conduction losses. This part is ROHS3 compliant and REACH unaffected.

Higher Current Capability Alternatives:

The IRF540NPBF, IRL540NPBF, and STP40NF10L are suitable substitutes where higher current capacity or improved thermal performance is acceptable. These parts exceed the 32A minimum requirement and are manufactured by established suppliers (Infineon Technologies and STMicroelectronics) with active product status. All maintain 100V voltage rating and TO-220 package compatibility. These options provide design margin for applications requiring higher current headroom or operating at elevated ambient temperatures.

The STP40NF10 offers the highest current capacity (50A) and lowest on-state resistance (28 mOhm), making it suitable for applications where thermal efficiency is a primary concern. However, the increased gate charge (62 nC) may require driver circuit adjustment in high-frequency switching applications.

Compliance and Regulatory Status:

All recommended substitute parts maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements equivalent to the original part. The FDP3682 and STP40NF10L are currently in active production, providing superior long-term supply chain stability compared to the obsolete PSMN034-100PS,127.

Frequently Asked Questions (FAQ)

Q: Can the FDP3682 be used as a direct replacement for the PSMN034-100PS,127?

A: Yes. The FDP3682 meets all critical substitution criteria: 100V voltage rating, 32A continuous drain current at case temperature, TO-220-3 package compatibility, -55°C to 175°C operating temperature range, and ROHS3 compliance. The on-state resistance is 36 mOhm compared to 34.5 mOhm, representing a 4.3% increase in conduction losses. Active production status ensures availability.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: TO-220AB and TO-220-3 are mechanically and thermally compatible through-hole packages used for power semiconductors. Both feature three leads and identical mounting hole spacing, allowing direct substitution on existing printed circuit boards. The designations reflect minor variations in lead configuration and supplier nomenclature but do not affect functional compatibility.

Q: Why do some substitute parts have higher gate charge (Qg) values?

A: Gate charge represents the total charge required to switch the transistor from off to on state. Higher gate charge values (such as 110 nC for the IRF1310NPBF versus 23.8 nC for the original part) indicate increased switching energy requirements. In low-frequency applications, this difference is negligible. In high-frequency switching circuits (above 100 kHz), higher gate charge may require driver circuit adjustment to maintain switching speed and efficiency.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed in this reference meet ROHS3 compliance requirements and REACH unaffected status, satisfying regulatory requirements equivalent to the original PSMN034-100PS,127.

Q: Which substitute part offers the best thermal performance?

A: The STP40NF10 provides the highest power dissipation rating (150W at case temperature) and the lowest on-state resistance (28 mOhm at 25A, 10V). This combination results in the lowest conduction losses and superior thermal efficiency. However, the increased gate charge (62 nC) requires consideration in high-frequency applications.

Q: Can I use a substitute part with higher current rating than 32A?

A: Yes. Parts such as the IRF1310NPBF (42A), STP40NF10 (50A), and IRL540NPBF (36A) exceed the 32A requirement and are fully compatible. Higher current ratings provide design margin and do not create compatibility issues. Verify that the application circuit can accommodate the potentially different gate charge and input capacitance characteristics.

Q: What is the significance of the Vgs(th) threshold voltage difference between parts?

A: Gate-source threshold voltage (Vgs(th)) determines the gate voltage at which the transistor begins to conduct. The original part specifies 4V at 1mA, while some substitutes specify 2V to 4V at 250µA. Lower threshold voltages (such as 2V for IRL540NPBF and STP40NF10L) allow operation with lower gate drive voltages, potentially improving driver efficiency. Higher threshold voltages require proportionally higher gate drive signals. Verify that the application gate driver can supply the required voltage for the selected substitute.

Q: Is the obsolete status of the PSMN034-100PS,127 a concern for new designs?

A: Obsolete status indicates that the manufacturer has discontinued production. For new designs, active-status alternatives such as FDP3682, IRF540NPBF, IRL540NPBF, STP40NF10, or STP40NF10L are recommended to ensure long-term supply chain stability and support. For existing systems requiring replacement components, the FDP3682 provides the closest functional match with active production status.

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