PSMN022-30BL,118 Equivalent & Substitute Parts

Part Overview

The PSMN022-30BL,118 is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 30V drain-to-source voltage and 30A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

The primary reason for identifying substitute parts is the obsolete product status, which limits long-term availability and supply chain reliability. Equivalent devices must maintain compatibility with existing circuit designs while meeting or exceeding the electrical and thermal performance specifications of the original component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	30	A
On-Resistance (Rds On Max) @ 5A, 10V	22.6	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 1mA	2.15	V
Gate Charge (Qg Max) @ 10V	9	nC
Power Dissipation (Max)	41	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the PSMN022-30BL,118 is evaluated based on the following critical parameters that determine functional equivalence:

Voltage Rating Compatibility: The substitute device must have a Vdss rating equal to or greater than 30V to ensure safe operation across all circuit conditions. Higher voltage ratings provide additional design margin and are acceptable for direct substitution.

Current Handling Capability: The substitute must support a continuous drain current (Id) equal to or greater than 30A at 25°C to maintain thermal and electrical performance parity with the original device.

On-Resistance Characteristics: The Rds On specification directly impacts power dissipation and thermal performance. Substitute devices with comparable or lower on-resistance values ensure equivalent or improved efficiency.

Package Compatibility: The D2PAK (TO-263-3) surface mount package is a standard industry format. Substitute devices in the same package type ensure mechanical and thermal interface compatibility with existing PCB layouts.

Regulatory Compliance: Both the original and substitute parts must maintain ROHS3 compliance and equivalent moisture sensitivity levels to ensure manufacturing process compatibility and long-term reliability.

The SQM47N10-24L_GE3 from Vishay Siliconix meets these substitution criteria with a higher voltage rating (100V), increased current capacity (47A), and active product status, providing enhanced performance headroom while maintaining package and compliance equivalence.

Parameter Comparison

Parameter	PSMN022-30BL,118 (Nexperia)	SQM47N10-24L_GE3 (Vishay)	Unit
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss)	30	100	V
Continuous Drain Current (Id) @ 25°C	30	47	A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Vgs 10V	22.6 @ 5A	24 @ 40A	mOhm
Gate Threshold Voltage (Vgs(th) Max)	2.15 @ 1mA	2.5 @ 250µA	V
Gate Charge (Qg Max) @ 10V	9	72	nC
Vgs (Max)	±20	±20	V
Power Dissipation (Max)	41	136	W
Operating Temperature Range	-55 to 175	-55 to 175	°C
Mounting Type	Surface Mount	Surface Mount
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active

Engineering Selection Recommendations

Primary Substitute: SQM47N10-24L_GE3

The SQM47N10-24L_GE3 is the qualified substitute for the PSMN022-30BL,118. This selection is based on the following engineering criteria:

Product Status: The SQM47N10-24L_GE3 maintains active product status with Vishay Siliconix, ensuring long-term availability, supply chain stability, and continued manufacturing support. The original PSMN022-30BL,118 is obsolete, making this transition necessary for sustained design support.

Regulatory Compliance: Both devices are ROHS3 compliant with identical moisture sensitivity levels (MSL 1, Unlimited), ensuring compatibility with current manufacturing processes and environmental standards.

Electrical Performance: The substitute device exceeds the original specifications across all critical parameters. The 100V Vdss rating provides 3.3× voltage margin over the 30V requirement, the 47A continuous current rating exceeds the 30A specification by 57%, and the maximum power dissipation of 136W substantially exceeds the 41W rating of the original device. These performance enhancements ensure the substitute operates well within design margins.

Package Compatibility: Both devices utilize the D2PAK (TO-263-3) surface mount package, ensuring direct mechanical and thermal interface compatibility with existing PCB designs without layout modifications.

Thermal Performance: The increased power dissipation capability (136W vs. 41W) and comparable operating temperature range (-55°C to 175°C) provide enhanced thermal headroom for demanding applications.

Frequently Asked Questions (FAQ)

Q: Can the SQM47N10-24L_GE3 be used as a direct replacement for the PSMN022-30BL,118 without circuit modifications?

A: Yes. The SQM47N10-24L_GE3 is electrically and mechanically compatible with the PSMN022-30BL,118. Both devices are N-Channel MOSFETs in D2PAK packages with identical gate drive voltage requirements (4.5V to 10V) and maximum gate voltage ratings (±20V). The substitute's higher voltage and current ratings provide additional design margin without requiring circuit changes.

Q: What is the significance of the higher Vdss rating (100V vs. 30V) on the substitute part?

A: The higher Vdss rating on the SQM47N10-24L_GE3 provides increased voltage margin and allows operation in circuits with higher transient voltage spikes or different voltage supply levels. This does not negatively impact performance in 30V applications; it simply provides additional safety margin and design flexibility.

Q: How does the increased gate charge (72 nC vs. 9 nC) affect circuit performance?

A: Gate charge directly impacts gate drive circuit requirements and switching speed. The higher gate charge on the substitute device requires slightly more charge delivery from the gate driver but does not prevent substitution. Gate drivers rated for the original device may require evaluation to ensure adequate current sourcing capability, particularly in high-frequency switching applications.

Q: Are there any thermal considerations when substituting these devices?

A: The SQM47N10-24L_GE3 has significantly higher power dissipation capability (136W vs. 41W) and comparable on-resistance characteristics. In applications where the original device operated near thermal limits, the substitute provides improved thermal performance. Both devices operate across the same temperature range (-55°C to 175°C).

Q: Is the D2PAK package identical between both devices?

A: Yes. Both the PSMN022-30BL,118 and SQM47N10-24L_GE3 use the D2PAK (TO-263-3) surface mount package with 2 leads plus tab. No PCB layout modifications are required for mechanical compatibility.

Q: What is the difference in on-resistance specifications between the two devices?

A: The PSMN022-30BL,118 specifies 22.6 mOhm at 5A and 10V gate voltage, while the SQM47N10-24L_GE3 specifies 24 mOhm at 40A and 10V gate voltage. The specifications are measured at different current levels, making direct comparison complex. At equivalent operating conditions, both devices provide comparable on-resistance performance suitable for the 30A application.

Q: Are both devices RoHS compliant?

A: Yes. Both the PSMN022-30BL,118 and SQM47N10-24L_GE3 are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity levels, ensuring compatibility with current manufacturing standards and environmental regulations.

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