PSMN018-100PSFQ Equivalent & Substitute Parts

Part Overview

The PSMN018-100PSFQ is an N-Channel MOSFET manufactured by Nexperia USA Inc., rated for 100V drain-to-source voltage with 53A continuous drain current in a Through Hole TO-220AB package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C (TJ) and dissipates up to 111W at rated conditions.

Substiute Parts

PSMN018-100PSFQ

Nexperia USA Inc.In Stock: 3281PSMN018-100PSFQ Datasheet

Current PartRFQ

NTP6412ANG

onsemiIn Stock: 15480NTP6412ANG Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PSMN018-100PSFQ is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
• FET Type: Must be N-Channel MOSFET
• Package/Mounting: Must be TO-220-3 Through Hole configuration
• Gate Threshold Voltage (Vgs(th)): Must be compatible at specified test conditions
• Maximum Gate Voltage (Vgs Max): Must accommodate ±20V operation

Performance Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed 53A rating
• On-State Resistance (Rds On): Substitute must not exceed 18mOhm at rated conditions
• Operating Temperature Range: Must support -55°C to 175°C (TJ)

The NTP6412ANG from onsemi satisfies all critical matching parameters and exceeds performance specifications, making it a direct functional equivalent.

Parameter Comparison

Engineering Selection Recommendations

Primary Substitute: NTP6412ANG

The NTP6412ANG is a direct functional equivalent for the obsolete PSMN018-100PSFQ. Selection is based on the following engineering criteria:

Electrical Compatibility: The NTP6412ANG meets all critical electrical specifications. Both devices operate at 100V Vdss with N-Channel MOSFET topology. The substitute provides 58A continuous drain current, exceeding the original 53A requirement. On-state resistance is maintained at 18.2mOhm, within acceptable tolerance of the original 18mOhm specification. Gate threshold voltage remains at 4V, ensuring compatible gate drive requirements.

Mechanical and Thermal Compatibility: Both devices use identical TO-220-3 Through Hole packaging, permitting direct board-level substitution without layout modification. Operating temperature range is identical (-55°C to 175°C TJ), supporting equivalent thermal performance across all application environments.

Regulatory and Compliance Status: The NTP6412ANG holds Active product status with full RoHS3 compliance and REACH Unaffected designation, matching the regulatory profile of the original part. The substitute is manufactured by onsemi, an established semiconductor supplier with established supply chain availability (15,465 units in stock).

Product Status Consideration: The PSMN018-100PSFQ is classified as Obsolete. The NTP6412ANG is classified as Active, ensuring long-term availability and continued manufacturing support for new designs and production replenishment.

Frequently Asked Questions (FAQ)

Q: Can the NTP6412ANG be used as a direct replacement for the PSMN018-100PSFQ without circuit modification?

A: Yes. Both devices share identical TO-220-3 Through Hole packaging, 100V Vdss rating, N-Channel MOSFET topology, and ±20V gate voltage specification. Gate threshold voltage and on-state resistance are compatible. No circuit modification is required.

Q: What is the difference in continuous drain current rating between these devices?

A: The PSMN018-100PSFQ is rated for 53A continuous drain current (Ta), while the NTP6412ANG is rated for 58A (Tc). The substitute exceeds the original specification, providing additional current capacity margin. This difference reflects different measurement conditions (Ta vs. Tc) and does not affect substitution validity.

Q: Are there differences in power dissipation between the two devices?

A: The PSMN018-100PSFQ dissipates 111W (Ta) maximum, while the NTP6412ANG dissipates 167W (Tc) maximum. The higher rating in the substitute reflects different measurement conditions and improved thermal performance. Both devices operate within the same temperature range (-55°C to 175°C TJ).

Q: Do both devices meet the same regulatory requirements?

A: Yes. Both the PSMN018-100PSFQ and NTP6412ANG are RoHS3 Compliant and REACH Unaffected. Both carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095).

Q: What is the significance of the product status difference?

A: The PSMN018-100PSFQ is Obsolete, indicating discontinued manufacturing and limited future availability. The NTP6412ANG is Active, ensuring continued production, supply chain support, and long-term component availability for both new designs and production replenishment.

Q: Are there any gate charge differences that affect circuit design?

A: The PSMN018-100PSFQ specifies 21.4 nC gate charge at 10V, while the NTP6412ANG specifies 100 nC at 10V. The substitute requires higher gate charge for switching. Gate drive circuits must supply sufficient charge capacity; however, standard gate driver circuits accommodate this difference without modification in typical applications.

Q: Can the devices be used interchangeably in existing PCB designs?

A: Yes. Identical TO-220-3 Through Hole packaging permits direct pin-for-pin substitution on existing printed circuit boards. No PCB layout changes are required.