PSMN017-30LL,115 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The PSMN017-30LL,115 is an N-Channel 30V MOSFET manufactured by NXP USA Inc., rated for 15A continuous drain current at 25°C with 37W maximum power dissipation in an 8-DFN3333 (3.3x3.3) surface mount package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing production and design requirements. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

PSMN017-30LL,115
NXP USA Inc.In Stock: 948PSMN017-30LL,115 Datasheet
PSMN017-30LL,115
Current Part
AON7406
Alpha & Omega Semiconductor Inc.In Stock: 30209AON7406 Datasheet
AON7406
MFR Recommended
AON7410
Alpha & Omega Semiconductor Inc.In Stock: 250151AON7410 Datasheet
AON7410
MFR Recommended
BSZ035N03LSGATMA1
Infineon TechnologiesIn Stock: 1130BSZ035N03LSGATMA1 Datasheet
BSZ035N03LSGATMA1
MFR Recommended
BSZ035N03MSGATMA1
Infineon TechnologiesIn Stock: 15213BSZ035N03MSGATMA1 Datasheet
BSZ035N03MSGATMA1
MFR Recommended
BSZ050N03LSGATMA1
Infineon TechnologiesIn Stock: 5539BSZ050N03LSGATMA1 Datasheet
BSZ050N03LSGATMA1
MFR Recommended
BSZ050N03MSGATMA1
Infineon TechnologiesIn Stock: 5225BSZ050N03MSGATMA1 Datasheet
BSZ050N03MSGATMA1
MFR Recommended
BSZ088N03LSGATMA1
Infineon TechnologiesIn Stock: 8817BSZ088N03LSGATMA1 Datasheet
BSZ088N03LSGATMA1
MFR Recommended
BSZ100N03LSGATMA1
Infineon TechnologiesIn Stock: 5440BSZ100N03LSGATMA1 Datasheet
BSZ100N03LSGATMA1
MFR Recommended
BSZ100N03MSGATMA1
Infineon TechnologiesIn Stock: 11004BSZ100N03MSGATMA1 Datasheet
BSZ100N03MSGATMA1
MFR Recommended
BSZ130N03LSGATMA1
Infineon TechnologiesIn Stock: 29951BSZ130N03LSGATMA1 Datasheet
BSZ130N03LSGATMA1
MFR Recommended
BSZ130N03MSGATMA1
Infineon TechnologiesIn Stock: 17169BSZ130N03MSGATMA1 Datasheet
BSZ130N03MSGATMA1
MFR Recommended
DMN3018SFG-13
Diodes IncorporatedIn Stock: 23511DMN3018SFG-13 Datasheet
DMN3018SFG-13
MFR Recommended
DMN3018SFG-7
Diodes IncorporatedIn Stock: 20733DMN3018SFG-7 Datasheet
DMN3018SFG-7
MFR Recommended
DMN3027LFG-13
Diodes IncorporatedIn Stock: 5249DMN3027LFG-13 Datasheet
DMN3027LFG-13
MFR Recommended
DMN3027LFG-7
Diodes IncorporatedIn Stock: 37111DMN3027LFG-7 Datasheet
DMN3027LFG-7
MFR Recommended
FDMC8651
onsemiIn Stock: 2434FDMC8651 Datasheet
FDMC8651
MFR Recommended
FDMC8878
onsemiIn Stock: 23152FDMC8878 Datasheet
FDMC8878
MFR Recommended
FDMC8882
onsemiIn Stock: 15537FDMC8882 Datasheet
FDMC8882
MFR Recommended
IRFH3702TRPBF
Infineon TechnologiesIn Stock: 29111IRFH3702TRPBF Datasheet
IRFH3702TRPBF
MFR Recommended
IRFH3707TRPBF
Infineon TechnologiesIn Stock: 89293IRFH3707TRPBF Datasheet
IRFH3707TRPBF
MFR Recommended
PSMN020-30MLCX
NXP USA Inc.In Stock: 1399PSMN020-30MLCX Datasheet
PSMN020-30MLCX
MFR Recommended
SI7112DN-T1-E3
Vishay SiliconixIn Stock: 8515SI7112DN-T1-E3 Datasheet
SI7112DN-T1-E3
MFR Recommended
SI7112DN-T1-GE3
Vishay SiliconixIn Stock: 8733SI7112DN-T1-GE3 Datasheet
SI7112DN-T1-GE3
MFR Recommended
SI7114DN-T1-E3
Vishay SiliconixIn Stock: 95142SI7114DN-T1-E3 Datasheet
SI7114DN-T1-E3
MFR Recommended
SI7114DN-T1-GE3
Vishay SiliconixIn Stock: 95233SI7114DN-T1-GE3 Datasheet
SI7114DN-T1-GE3
MFR Recommended
SI7326DN-T1-GE3
Vishay SiliconixIn Stock: 35328SI7326DN-T1-GE3 Datasheet
SI7326DN-T1-GE3
MFR Recommended
SI7716ADN-T1-GE3
Vishay SiliconixIn Stock: 125344SI7716ADN-T1-GE3 Datasheet
SI7716ADN-T1-GE3
MFR Recommended
SI7804DN-T1-GE3
Vishay SiliconixIn Stock: 9141SI7804DN-T1-GE3 Datasheet
SI7804DN-T1-GE3
MFR Recommended
SI7806ADN-T1-GE3
Vishay SiliconixIn Stock: 1459SI7806ADN-T1-GE3 Datasheet
SI7806ADN-T1-GE3
MFR Recommended
STL10N3LLH5
STMicroelectronicsIn Stock: 34743STL10N3LLH5 Datasheet
STL10N3LLH5
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 15 A (Tc)
Rds On (Max) @ Id, Vgs 17 mOhm @ 5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 2.15 V @ 1mA
Gate Charge (Qg) @ Vgs 10 nC @ 10V
Input Capacitance (Ciss) @ Vds 526 pF @ 15V
Power Dissipation (Max) 37 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package 8-DFN3333 (3.3x3.3)
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution eligibility for the PSMN017-30LL,115 is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Drain to Source Voltage (Vdss): Must equal or exceed 30V
  • Continuous Drain Current (Id) @ 25°C: Must meet or exceed 15A (Tc rating)
  • Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching range (approximately 2.0V to 2.5V @ 250µA to 1mA)
  • Maximum Gate to Source Voltage (Vgs): Must support ±20V operation
  • Operating Temperature Range: Must span -55°C to 150°C (TJ)

Thermal and Mechanical Compatibility:

  • Power Dissipation: Substitute must support minimum 37W (Tc) or higher
  • Mounting Type: Surface mount only
  • Package Type: 8-pin DFN or equivalent power package (8-DFN-EP, 8-PowerVDFN, 8-PowerTDFN acceptable)
  • Exposed Pad: Required for thermal management

Regulatory and Supply Chain:

  • RoHS3 Compliance: Required
  • Moisture Sensitivity Level: MSL 1 (Unlimited) preferred
  • Product Status: Active or Not For New Designs acceptable; Obsolete status unacceptable for substitutes

Substitute parts are grouped into two categories based on package form factor and thermal performance: Alpha & Omega Semiconductor devices (8-DFN-EP 3x3 package) and Infineon Technologies OptiMOS™ series (8-PowerTDSON package). Both groups meet the 30V Vdss and 15A+ Id requirements with compatible thermal and electrical characteristics.

Parameter Comparison

Parameter PSMN017-30LL,115 AON7406 AON7410 BSZ050N03LSGATMA1 BSZ050N03MSGATMA1 BSZ130N03LSGATMA1
Manufacturer NXP USA Inc. Alpha & Omega Semiconductor Alpha & Omega Semiconductor Infineon Technologies Infineon Technologies Infineon Technologies
Vdss (V) 30 30 30 30 30 30
Id @ 25°C (A, Tc) 15 25 24 40 40 35
Rds On (Max) @ 10V (mOhm) 17 @ 5A 17 @ 9A 20 @ 8A 5 @ 20A 4.5 @ 20A 13 @ 20A
Vgs(th) (V) 2.15 @ 1mA 2.4 @ 250µA 2.5 @ 250µA 2.2 @ 250µA 2.0 @ 250µA 2.2 @ 250µA
Qg (nC @ 10V) 10 18 12 35 46 13
Ciss (pF @ 15V) 526 888 660 2800 3600 970
Power Dissipation (W, Tc) 37 15.5 20 50 48 25
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 8-DFN3333 (3.3x3.3) 8-DFN-EP (3x3) 8-DFN-EP (3x3) 8-PowerTDSON 8-PowerTDSON 8-PowerTDSON
Product Status Obsolete Not For New Designs Not For New Designs Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

The Infineon OptiMOS™ series devices BSZ050N03LSGATMA1, BSZ050N03MSGATMA1, and BSZ130N03LSGATMA1 are recommended as primary substitutes. All three maintain Active product status, ensuring long-term availability and supply chain stability. These devices exceed the PSMN017-30LL,115 electrical specifications with 30V Vdss rating, 35A to 40A continuous drain current capability, and superior thermal performance (25W to 50W Tc dissipation). The 8-PowerTDSON package provides enhanced thermal management through larger exposed pad geometry compared to the original 8-DFN3333 package.

BSZ050N03LSGATMA1 and BSZ050N03MSGATMA1 are electrically interchangeable with the original part, offering 40A Tc current rating and 50W to 48W power dissipation respectively. BSZ130N03LSGATMA1 provides the closest thermal profile to the original device at 25W Tc dissipation with 35A current capability, making it suitable for applications with tighter thermal constraints.

Secondary Substitutes (Not For New Designs Status):

AON7406 and AON7410 from Alpha & Omega Semiconductor are available as secondary alternatives. Both devices maintain 30V Vdss rating with 24A to 25A continuous drain current and are packaged in 8-DFN-EP (3x3) format, providing closer mechanical compatibility to the original 8-DFN3333 package. These parts carry "Not For New Designs" status, indicating limited future availability; however, they remain suitable for legacy system maintenance and repair applications. Current inventory levels (30,194 and 250,100 units respectively) support near-term procurement requirements.

Regulatory Compliance:

All recommended substitutes maintain ROHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original device specifications. Operating temperature range (-55°C to 150°C TJ) is consistent across all alternatives, ensuring thermal envelope compatibility.

Frequently Asked Questions (FAQ)

Q: Can AON7406 or AON7410 be used as direct replacements for PSMN017-30LL,115?

A: AON7406 and AON7410 are electrically compatible substitutes meeting the 30V Vdss and 15A+ continuous drain current requirements. Both devices are packaged in 8-DFN-EP (3x3) format, which is mechanically similar to the original 8-DFN3333 package. However, these parts carry "Not For New Designs" status, limiting their suitability for new product development. They are appropriate for legacy system support and repair applications where inventory availability is confirmed.

Q: What are the key differences between Alpha & Omega and Infineon substitute options?

A: Alpha & Omega devices (AON7406, AON7410) utilize the 8-DFN-EP (3x3) package, providing closer mechanical compatibility to the original 8-DFN3333 form factor. Infineon OptiMOS™ devices employ the larger 8-PowerTDSON package, offering superior thermal performance and higher current ratings (35A to 40A Tc versus 24A to 25A Tc). Infineon substitutes carry Active product status, ensuring long-term availability. Selection depends on application thermal requirements and PCB layout constraints.

Q: Are package differences between 8-DFN3333, 8-DFN-EP, and 8-PowerTDSON significant for PCB layout?

A: Yes. The 8-DFN3333 (3.3x3.3mm) and 8-DFN-EP (3x3mm) packages are mechanically similar with minor footprint variations. The 8-PowerTDSON package is larger with enhanced thermal characteristics. PCB layouts designed for 8-DFN3333 can accommodate 8-DFN-EP devices with minimal modification. Conversion to 8-PowerTDSON requires PCB redesign to accommodate the larger package footprint and modified pin configuration. Thermal via placement and copper area requirements differ significantly between package types.

Q: Which substitute offers the best thermal performance?

A: BSZ035N03LSGATMA1 and BSZ035N03MSGATMA1 provide the highest power dissipation capability at 69W (Tc), followed by BSZ050N03LSGATMA1 and BSZ050N03MSGATMA1 at 50W to 48W (Tc). These devices are suitable for high-power applications exceeding the original 37W (Tc) specification. For applications requiring thermal performance matching the original device, BSZ130N03LSGATMA1 at 25W (Tc) is appropriate.

Q: What is the significance of "Not For New Designs" product status?

A: "Not For New Designs" indicates that the manufacturer is not recommending the part for new product development, though the device remains available for existing applications. This status typically precedes obsolescence and signals potential future discontinuation. Parts with this designation should be used only for legacy system maintenance, repair, or short-term production runs. For new designs, Active status substitutes (Infineon OptiMOS™ series) are strongly preferred.

Q: Are gate charge and input capacitance differences critical for circuit design?

A: Gate charge (Qg) and input capacitance (Ciss) affect gate drive circuit design and switching speed. The original PSMN017-30LL,115 specifies 10nC Qg and 526pF Ciss. Infineon substitutes exhibit higher values (13nC to 74nC Qg; 970pF to 5700pF Ciss), requiring gate drive circuits with adequate current sourcing capability. Alpha & Omega devices (12nC to 18nC Qg; 660pF to 888pF Ciss) provide closer matching to original specifications. Gate drive circuit verification is required when substituting devices with significantly different capacitive characteristics.

Q: Can multiple substitute parts be used interchangeably within the same application?

A: Substitutes within the same package family (Alpha & Omega 8-DFN-EP devices or Infineon 8-PowerTDSON devices) are generally interchangeable if electrical specifications are verified for the specific application. However, mixing package types (8-DFN-EP and 8-PowerTDSON) within a single PCB design is not recommended due to different thermal and mechanical characteristics. Standardization on a single substitute part number per application is required for manufacturing consistency and supply chain management.

Q: What compliance certifications are maintained across all substitutes?

A: All recommended substitutes maintain ROHS3 compliance, MSL 1 (Unlimited) moisture sensitivity rating, and REACH Unaffected status, matching the original PSMN017-30LL,115 specifications. Operating temperature range (-55°C to 150°C TJ) and maximum gate-source voltage (±20V) are consistent across all alternatives. No additional compliance verification is required for regulatory or environmental standards.

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